IXYS IXXX300N60C3

Name: IXXX300N60C3
Brand: IXYS
SKU: 2496752-IXXX300N60C3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXXX300N60C3

Manufacturer:: IXYS

Ventron No:: 2496752-IXXX300N60C3

Description:: IGBT 600V 510A 2300W TO247

ECAD Model:

Datasheet:: IXXX300N60C3

Specifications

IXYS IXXX300N60C3 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXXX300N60C3.

Factory Lead Time
28 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
GenX3™, XPT™
Published
2012
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
2.3kW
Reach Compliance Code
unknown
Input Type
Standard
Power - Max
2300W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
510A
Collector Emitter Breakdown Voltage
600V
Test Condition
400V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 100A
IGBT Type
PT
Gate Charge
438nC
Current - Collector Pulsed (Icm)
1075A
Td (on/off) @ 25°C
50ns/160ns
Switching Energy
3.35mJ (on), 1.9mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.5V
RoHS Status
ROHS3 Compliant

Description

IXXX300N60C3 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXXX300N60C3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXXX300N60C3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXXX300N60C3 More Descriptions

IGBT 600V 510A 2300W TO247
IGBT Transistors XPT 600V IGBT 300A

Product Comparison

The three parts on the right have similar specifications to IXXX300N60C3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Subcategory

Max Power Dissipation

Reach Compliance Code

Input Type

Power - Max

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Test Condition

Vce(on) (Max) @ Vge, Ic

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

RoHS Status

JESD-609 Code

Terminal Finish

Operating Temperature (Max)

Reverse Recovery Time

Base Part Number

Element Configuration

Power Dissipation

Turn On Delay Time

Turn-Off Delay Time

Collector Emitter Saturation Voltage

Lead Free

View Compare
IXXX300N60C3

IXYS

28 Weeks

Through Hole

Through Hole

TO-247-3

-55°C~175°C TJ

Tube

GenX3™, XPT™

2012

Active

1 (Unlimited)

Insulated Gate BIP Transistors

2.3kW

unknown

Standard

2300W

N-CHANNEL

2V

510A

600V

400V, 100A, 1 Ω, 15V

2V @ 15V, 100A

PT

438nC

1075A

50ns/160ns

3.35mJ (on), 1.9mJ (off)

20V

5.5V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-
IXXX100N60C3H1

IXYS

8 Weeks

Through Hole

Through Hole

TO-247-3

-

Tube

GenX3™, XPT™

-

Active

1 (Unlimited)

Insulated Gate BIP Transistors

695W

not_compliant

Standard

695W

N-CHANNEL

2.2V

170A

600V

360V, 70A, 2 Ω, 15V

2.2V @ 15V, 70A

PT

150nC

340A

30ns/90ns

2mJ (on), 950μJ (off)

20V

5.5V

ROHS3 Compliant

e3

Matte Tin (Sn)

150°C

140 ns

-

-

-

-

-

-

-

IXXX300N60C3 vs IXXX100N60C3H1
IXXX110N65B4H1

IXYS

18 Weeks

Through Hole

Through Hole

TO-247-3

-55°C~175°C TJ

Tube

GenX4™, XPT™

2013

Active

1 (Unlimited)

Insulated Gate BIP Transistors

880W

not_compliant

Standard

-

N-CHANNEL

2.1V

240A

650V

400V, 55A, 2 Ω, 15V

2.1V @ 15V, 110A

PT

183nC

630A

38ns/156ns

2.2mJ (on), 1.05mJ (off)

20V

6.5V

ROHS3 Compliant

e3

Matte Tin (Sn)

-

100 ns

110N65

Single

880W

26 ns

146 ns

1.75V

Lead Free

IXXX300N60C3 vs IXXX110N65B4H1
IXXX200N65B4

IXYS

28 Weeks

Through Hole

Through Hole

TO-247-3

-55°C~175°C TJ

Tube

GenX4™, XPT™

2014

Active

1 (Unlimited)

Insulated Gate BIP Transistors

1.15kW

unknown

Standard

1150W

N-CHANNEL

1.7V

370A

650V

400V, 100A, 1 Ω, 15V

1.7V @ 15V, 160A

PT

553nC

1000A

62ns/245ns

4.4mJ (on), 2.2mJ (off)

20V

6.5V

ROHS3 Compliant

e3

Matte Tin (Sn)

-

-

-

Single

1.15kW

-

-

-

-

IXXX300N60C3 vs IXXX200N65B4