IXYS IXTP2N80 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXTP2N80.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2003
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Additional FeatureAVALANCHE RATED
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max54W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation54W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs6.2 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id5.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds440pF @ 25V
- Current - Continuous Drain (Id) @ 25°C2A Tc
- Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
- Rise Time18ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time30 ns
- Continuous Drain Current (ID)2A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)2A
- Drain to Source Breakdown Voltage800V
- Pulsed Drain Current-Max (IDM)8A
- Avalanche Energy Rating (Eas)200 mJ
- RoHS StatusROHS3 Compliant
IXTP2N80 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.The maximum input capacitance of this device is 440pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 2A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 30 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 8A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
IXTP2N80 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 8A.
IXTP2N80 Applications
There are a lot of IXYS
IXTP2N80 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.The maximum input capacitance of this device is 440pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 2A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 30 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 8A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
IXTP2N80 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 8A.
IXTP2N80 Applications
There are a lot of IXYS
IXTP2N80 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IXTP2N80 More Descriptions
MOSFET N-CH 800V 2A TO220AB
IXYS Power Transistor Module
Contact for details
IXYS Power Transistor Module
Contact for details
The three parts on the right have similar specifications to IXTP2N80.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusSeriesJESD-609 CodeECCN CodeTerminal FinishTerminal PositionJESD-30 CodeOperating Temperature (Max)ConfigurationDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxDS Breakdown Voltage-MinFactory Lead TimeSubcategoryLead FreeView Compare
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IXTP2N80Through HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTube2003yesActive1 (Unlimited)3AVALANCHE RATEDMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified154W TcSingleENHANCEMENT MODE54WDRAINN-ChannelSWITCHING6.2 Ω @ 500mA, 10V5.5V @ 250μA440pF @ 25V2A Tc22nC @ 10V18ns10V±20V15 ns30 ns2ATO-220AB20V2A800V8A200 mJROHS3 Compliant---------------
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Through HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTube2006yesObsolete1 (Unlimited)3AVALANCHE RATEDMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1480W TcSingleENHANCEMENT MODE480WDRAINN-ChannelSWITCHING3.6m Ω @ 25A, 10V4V @ 250μA7600pF @ 25V240A Tc170nC @ 10V54ns10V±20V75 ns63 ns240ATO-220AB--55V650A1000 mJRoHS CompliantTrenchT2™e3EAR99Matte Tin (Sn)----------
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Through HoleThrough HoleTO-220-3-SILICON-Tube2012yesObsolete1 (Unlimited)3-MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1--ENHANCEMENT MODE-DRAINN-ChannelSWITCHING-4V @ 1mA-180A Tc------180ATO-220AB---600A450 mJRoHS Compliant-e3EAR99PURE TINSINGLER-PSFM-T3175°CSINGLE WITH BUILT-IN DIODE55V0.0051Ohm55V---
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Through HoleThrough HoleTO-220-3-SILICON-55°C~150°C TJTube2008yesActive1 (Unlimited)3AVALANCHE RATEDMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified186W TcSingleENHANCEMENT MODE86WDRAINN-ChannelSWITCHING7.5 Ω @ 500mA, 10V4.5V @ 100μA655pF @ 25V2A Tc24.3nC @ 10V29ns10V±20V27 ns80 ns2ATO-220AB20V2A1kV5A-ROHS3 CompliantPolar™e1-Tin/Silver/Copper (Sn/Ag/Cu)-R-PSFM-T3--1000V--17 WeeksFET General Purpose PowerLead Free
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