IXYS IXKG25N80C
- Part Number:
- IXKG25N80C
- Manufacturer:
- IXYS
- Ventron No:
- 2850858-IXKG25N80C
- Description:
- MOSFET N-CH 800V 25A ISO264
- Datasheet:
- IXKG25N80C
IXYS IXKG25N80C technical specifications, attributes, parameters and parts with similar specifications to IXYS IXKG25N80C.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseISO264™
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™
- Published2003
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max250W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation250W
- Case ConnectionISOLATED
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs150m Ω @ 9A, 10V
- Vgs(th) (Max) @ Id4V @ 2mA
- Current - Continuous Drain (Id) @ 25°C25A Tc
- Gate Charge (Qg) (Max) @ Vgs166nC @ 10V
- Rise Time25ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time75 ns
- Continuous Drain Current (ID)25A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.15Ohm
- Drain to Source Breakdown Voltage800V
- Avalanche Energy Rating (Eas)690 mJ
- RoHS StatusROHS3 Compliant
IXKG25N80C Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 690 mJ.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 25A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=800V. And this device has 800V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 75 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.
IXKG25N80C Features
the avalanche energy rating (Eas) is 690 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
IXKG25N80C Applications
There are a lot of IXYS
IXKG25N80C applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 690 mJ.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 25A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=800V. And this device has 800V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 75 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.
IXKG25N80C Features
the avalanche energy rating (Eas) is 690 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
IXKG25N80C Applications
There are a lot of IXYS
IXKG25N80C applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IXKG25N80C More Descriptions
MOSFET N-CH 800V 25A ISO264
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
12 January 2024
A Complete Guide to TXS0102DCUR Voltage Level Translator
Ⅰ. What is TXS0102DCUR?Ⅱ. Symbol, footprint and pin configuration of TXS0102DCURⅢ. What are the features of TXS0102DCUR?Ⅳ. How does TXS0102DCUR work?Ⅴ. Specifications of TXS0102DCURⅥ. Price and inventory of... -
12 January 2024
SN74LVC1G08DBVR Characteristics, Specifications, Layout, Advantages and Applications
Ⅰ. SN74LVC1G08DBVR overviewⅡ. Characteristics of SN74LVC1G08DBVRⅢ. The specifications of SN74LVC1G08DBVRⅣ. Layout of SN74LVC1G08DBVRⅤ. What are the advantages of SN74LVC1G08DBVR?Ⅵ. Where is SN74LVC1G08DBVR used?Ⅶ. How to use SN74LVC1G08DBVR?SN74LVC1G08DBVR is... -
15 January 2024
Performance and Applications of TMS320VC5502PGF300 Digital Signal Processor
Ⅰ. What is a digital signal processor?Ⅱ. Introduction to TMS320VC5502PGF300Ⅲ. Specifications of TMS320VC5502PGF300Ⅳ. Performance of TMS320VC5502PGF300Ⅴ. CPU architecture of TMS320VC5502PGF300Ⅵ. Applications of TMS320VC5502PGF300Ⅶ. Package of TMS320VC5502PGF300Ⅷ. What are... -
15 January 2024
SN75176BDR Characteristics, Working Principle and Applications
Ⅰ. Overview of SN75176BDRⅡ. Specifications of SN75176BDRⅢ. What are the characteristics of SN75176BDR?Ⅳ. Symbol, footprint and pin configuration of SN75176BDRⅤ. Simplified schematic of SN75176BDRⅥ. How does SN75176BDR work?Ⅶ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.