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IXGH39N60BD1

IXYS IXGH39N60BD1

Part Number:
IXGH39N60BD1
Manufacturer:
IXYS
Ventron No:
2496053-IXGH39N60BD1
Description:
IGBT 600V 76A 200W TO247AD
ECAD Model:
Datasheet:
IXGH39N60BD1

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Specifications
IXYS IXGH39N60BD1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGH39N60BD1.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    6.500007g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HiPerFAST™
  • Published
    2003
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    200W
  • Base Part Number
    IXG*39N60
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    25 ns
  • Power - Max
    200W
  • Transistor Application
    MOTOR CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    250 ns
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    76A
  • Reverse Recovery Time
    25 ns
  • JEDEC-95 Code
    TO-247AD
  • Collector Emitter Breakdown Voltage
    600V
  • Turn On Time
    55 ns
  • Test Condition
    480V, 39A, 4.7 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    1.7V @ 15V, 39A
  • Turn Off Time-Nom (toff)
    710 ns
  • Gate Charge
    110nC
  • Current - Collector Pulsed (Icm)
    152A
  • Td (on/off) @ 25°C
    25ns/250ns
  • Switching Energy
    4mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5V
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IXGH39N60BD1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGH39N60BD1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGH39N60BD1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGH39N60BD1 More Descriptions
Trans IGBT Chip N-CH 600V 76A 3-Pin (3 Tab) TO-247AD
IGBT 600V 76A 200W TO247AD
OEMs, CMs ONLY (NO BROKERS)
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXGH39N60BD1.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Subcategory
    Max Power Dissipation
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Turn On Delay Time
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Radiation Hardening
    RoHS Status
    Lead Free
    Factory Lead Time
    JESD-609 Code
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Voltage - Collector Emitter Breakdown (Max)
    IGBT Type
    Fall Time-Max (tf)
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Power Dissipation
    Collector Emitter Saturation Voltage
    View Compare
  • IXGH39N60BD1
    IXGH39N60BD1
    IXYS
    Through Hole
    Through Hole
    TO-247-3
    3
    6.500007g
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFAST™
    2003
    yes
    Obsolete
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    200W
    IXG*39N60
    3
    1
    Single
    COLLECTOR
    Standard
    25 ns
    200W
    MOTOR CONTROL
    N-CHANNEL
    250 ns
    600V
    76A
    25 ns
    TO-247AD
    600V
    55 ns
    480V, 39A, 4.7 Ω, 15V
    1.7V @ 15V, 39A
    710 ns
    110nC
    152A
    25ns/250ns
    4mJ (off)
    20V
    5V
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGH16N170AH1
    IXGH16N170AH1
    IXYS
    Through Hole
    Through Hole
    TO-247-3
    -
    6.500007g
    SILICON
    -55°C~150°C TJ
    Bulk
    -
    2012
    yes
    Obsolete
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    190W
    IXG*16N170
    3
    1
    Single
    COLLECTOR
    Standard
    -
    190W
    MOTOR CONTROL
    N-CHANNEL
    -
    1.7kV
    16A
    230 ns
    TO-247AD
    1.7kV
    97 ns
    850V, 16A, 10 Ω, 15V
    5V @ 15V, 11A
    330 ns
    65nC
    40A
    36ns/160ns
    900μJ (off)
    20V
    5V
    -
    RoHS Compliant
    Lead Free
    8 Weeks
    e1
    Tin/Silver/Copper (Sn/Ag/Cu)
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    1700V
    NPT
    150ns
    -
    -
    -
    -
    -
    IXGH39N60BD1 vs IXGH16N170AH1
  • IXGH25N250
    IXGH25N250
    IXYS
    Through Hole
    Through Hole
    TO-247-3
    -
    -
    -
    -
    Tube
    -
    2003
    yes
    Active
    1 (Unlimited)
    3
    -
    250W
    IXG*25N250
    3
    1
    Single
    COLLECTOR
    Standard
    -
    -
    POWER CONTROL
    N-CHANNEL
    -
    2.5kV
    60A
    -
    -
    2.5kV
    301 ns
    -
    5.2V @ 15V, 75A
    409 ns
    75nC
    200A
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    28 Weeks
    e1
    Tin/Silver/Copper (Sn/Ag/Cu)
    -
    -
    R-PSFM-T3
    -
    2500V
    NPT
    -
    150°C
    -55°C
    -
    -
    -
    IXGH39N60BD1 vs IXGH25N250
  • IXGH20N140C3H1
    IXGH20N140C3H1
    IXYS
    Through Hole
    Through Hole
    TO-247-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    GenX3™
    2010
    yes
    Obsolete
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    250W
    -
    3
    1
    Single
    COLLECTOR
    Standard
    19 ns
    -
    POWER CONTROL
    N-CHANNEL
    110 ns
    5V
    42A
    70ns
    -
    1.4kV
    35 ns
    700V, 20A, 5 Ω, 15V
    5V @ 15V, 20A
    524 ns
    88nC
    108A
    19ns/110ns
    1.35mJ (on), 440μJ (off)
    20V
    5V
    -
    RoHS Compliant
    Lead Free
    -
    e1
    Tin/Silver/Copper (Sn/Ag/Cu)
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    1400V
    PT
    -
    -
    -
    ULTRA FAST
    250W
    4V
    IXGH39N60BD1 vs IXGH20N140C3H1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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