IXYS IXFP230N075T2

Name: IXFP230N075T2
Brand: IXYS
SKU: 2850647-IXFP230N075T2
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXFP230N075T2

Manufacturer:: IXYS

Ventron No:: 2850647-IXFP230N075T2

Description:: MOSFET N-CH 75V 230A

ECAD Model:

Datasheet:: IXFP230N075T2

Specifications

IXYS IXFP230N075T2 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFP230N075T2.

Factory Lead Time
26 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HiPerFET™, TrenchT2™
Published
2006
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
480W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
10500pF @ 25V
Current - Continuous Drain (Id) @ 25°C
230A Tc
Gate Charge (Qg) (Max) @ Vgs
178nC @ 10V
Drain to Source Voltage (Vdss)
75V
Drive Voltage (Max Rds On,Min Rds On)
10V
Continuous Drain Current (ID)
230A
JEDEC-95 Code
TO-220AB
Drain-source On Resistance-Max
0.0042Ohm
Pulsed Drain Current-Max (IDM)
700A
DS Breakdown Voltage-Min
75V
Avalanche Energy Rating (Eas)
850 mJ
RoHS Status
ROHS3 Compliant

Description

IXFP230N075T2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 850 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 10500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 700A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 75V, it should remain above the 75V level.The transistor must receive a 75V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFP230N075T2 Features
the avalanche energy rating (Eas) is 850 mJ
a continuous drain current (ID) of 230A
based on its rated peak drain current 700A.
a 75V drain to source voltage (Vdss)

IXFP230N075T2 Applications
There are a lot of IXYS
IXFP230N075T2 applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

IXFP230N075T2 More Descriptions

MOSFET N-CH 75V 230A TO220AB
OEMs, CMs ONLY (NO BROKERS)
Contact for details

Product Comparison

The three parts on the right have similar specifications to IXFP230N075T2.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Continuous Drain Current (ID)

JEDEC-95 Code

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Number of Pins

Element Configuration

Turn On Delay Time

Vgs (Max)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Height

Length

Width

Resistance

Voltage - Rated DC

Current Rating

Power Dissipation

Rise Time

Fall Time (Typ)

Threshold Voltage

Drain to Source Breakdown Voltage

REACH SVHC

Lead Free

View Compare
IXFP230N075T2

IXYS

26 Weeks

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~175°C TJ

Tube

HiPerFET™, TrenchT2™

2006

e1

yes

Active

1 (Unlimited)

3

EAR99

TIN SILVER COPPER

AVALANCHE RATED

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

unknown

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

480W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

4.2m Ω @ 50A, 10V

4V @ 1mA

10500pF @ 25V

230A Tc

178nC @ 10V

75V

10V

230A

TO-220AB

0.0042Ohm

700A

75V

850 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IXFP8N50P3

IXYS

24 Weeks

Through Hole

Through Hole

TO-220-3

-

-55°C~150°C TJ

Tube

HiPerFET™, Polar3™

2013

-

-

Active

1 (Unlimited)

-

-

-

-

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

180W Tc

-

-

N-Channel

-

800m Ω @ 4A, 10V

5V @ 1.5mA

705pF @ 25V

8A Tc

13nC @ 10V

500V

10V

8A

-

-

-

-

-

ROHS3 Compliant

3

Single

13 ns

±30V

29 ns

30V

8A

16mm

10.66mm

4.83mm

-

-

-

-

-

-

-

-

-

-

IXFP230N075T2 vs IXFP8N50P3
IXFP24N60X

IXYS

19 Weeks

Through Hole

Through Hole

TO-220-3

-

-55°C~150°C TJ

Tube

HiPerFET™

2015

-

-

Active

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

400W Tc

-

-

N-Channel

-

175m Ω @ 12A, 10V

4.5V @ 2.5mA

1910pF @ 25V

24A Tc

47nC @ 10V

600V

10V

24A

-

-

-

-

-

ROHS3 Compliant

-

-

-

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IXFP230N075T2 vs IXFP24N60X
IXFP10N60P

IXYS

26 Weeks

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~150°C TJ

Tube

HiPerFET™, PolarP2™

2004

-

yes

Active

1 (Unlimited)

3

EAR99

Pure Tin (Sn)

AVALANCHE RATED

FET General Purpose Power

MOSFET (Metal Oxide)

-

NOT SPECIFIED

-

NOT SPECIFIED

3

-

Not Qualified

1

-

200W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

740m Ω @ 5A, 10V

5.5V @ 1mA

1610pF @ 25V

10A Tc

32nC @ 10V

-

10V

10A

TO-220AB

-

25A

-

500 mJ

ROHS3 Compliant

3

Single

23 ns

±30V

65 ns

30V

-

9.15mm

10.66mm

4.83mm

740MOhm

600V

10A

200W

27ns

21 ns

5.5V

600V

No SVHC

Lead Free

IXFP230N075T2 vs IXFP10N60P