IXYS IXFK90N20Q
- Part Number:
- IXFK90N20Q
- Manufacturer:
- IXYS
- Ventron No:
- 4538907-IXFK90N20Q
- Description:
- MOSFET N-CH 200V 90A TO-264AA
- Datasheet:
- IXFK90N20Q
IXYS IXFK90N20Q technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFK90N20Q.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-264-3, TO-264AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFET™
- Published2002
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)Not Applicable
- Number of Terminations3
- ECCN CodeEAR99
- Resistance22MOhm
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- Voltage - Rated DC200V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating90A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max500W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation500W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs22m Ω @ 45A, 10V
- Vgs(th) (Max) @ Id4V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds6800pF @ 25V
- Current - Continuous Drain (Id) @ 25°C90A Tc
- Gate Charge (Qg) (Max) @ Vgs190nC @ 10V
- Rise Time31ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)12 ns
- Turn-Off Delay Time82 ns
- Continuous Drain Current (ID)90A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage200V
- Avalanche Energy Rating (Eas)2500 mJ
- Recovery Time200 ns
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXFK90N20Q Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 90A amps.In this device, the drain-source breakdown voltage is 200V and VGS=200V, so the drain-source breakdown voltage is 200V in this case.It is [82 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFK90N20Q Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 82 ns
IXFK90N20Q Applications
There are a lot of IXYS
IXFK90N20Q applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 90A amps.In this device, the drain-source breakdown voltage is 200V and VGS=200V, so the drain-source breakdown voltage is 200V in this case.It is [82 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFK90N20Q Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 82 ns
IXFK90N20Q Applications
There are a lot of IXYS
IXFK90N20Q applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IXFK90N20Q More Descriptions
Trans MOSFET N-CH 200V 90A 3-Pin(3 Tab) TO-264AA
MOSFET [Ixys] IXFK90N20Q MOSFET
MOSFET Transistor
MOSFET [Ixys] IXFK90N20Q MOSFET
MOSFET Transistor
The three parts on the right have similar specifications to IXFK90N20Q.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)Recovery TimeRoHS StatusLead FreeTurn On Delay TimeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)HeightLengthWidthJESD-609 CodeTerminationTerminal FinishReverse Recovery TimeThreshold VoltageDual Supply VoltageNominal VgsREACH SVHCRadiation HardeningWeightHTS CodeView Compare
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IXFK90N20Q8 WeeksThrough HoleThrough HoleTO-264-3, TO-264AA3SILICON-55°C~150°C TJTubeHiPerFET™2002yesNot For New DesignsNot Applicable3EAR9922MOhmAVALANCHE RATEDFET General Purpose Power200VMOSFET (Metal Oxide)NOT SPECIFIED90ANOT SPECIFIED3Not Qualified1500W TcSingleENHANCEMENT MODE500WDRAINN-ChannelSWITCHING22m Ω @ 45A, 10V4V @ 4mA6800pF @ 25V90A Tc190nC @ 10V31ns10V±20V12 ns82 ns90A20V200V2500 mJ200 nsROHS3 CompliantLead Free------------------
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-Through HoleThrough HoleTO-264-3, TO-264AA3SILICON-55°C~150°C TJTubeHiPerFET™2002yesObsolete1 (Unlimited)3--AVALANCHE RATEDFET General Purpose Power-MOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIED3Not Qualified1360W TcSingleENHANCEMENT MODE360WDRAINN-ChannelSWITCHING250m Ω @ 13A, 10V4.5V @ 4mA5100pF @ 25V26A Tc200nC @ 10V32ns10V±20V16 ns80 ns26A20V600V1500 mJ-RoHS CompliantLead Free30 ns0.25Ohm104A26.16mm19.96mm5.13mm-----------
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30 WeeksThrough HoleThrough HoleTO-264-3, TO-264AA3SILICON-55°C~175°C TJBulkHiPerFET™, PolarP2™2006yesActive1 (Unlimited)3EAR9910mOhmAVALANCHE RATEDFET General Purpose Power-MOSFET (Metal Oxide)---3-1715W TcSingleENHANCEMENT MODE714WDRAINN-ChannelSWITCHING9m Ω @ 500mA, 10V5V @ 4mA6000pF @ 25V170A Tc198nC @ 10V50ns10V±20V33 ns90 ns170A20V100V2000 mJ-ROHS3 CompliantLead Free------e1Through HoleTin/Silver/Copper (Sn/Ag/Cu)150 ns5V100V5 VNo SVHCNo--
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6 WeeksThrough HoleThrough HoleTO-264-3, TO-264AA3SILICON-55°C~150°C TJTubeHiPerFET™1996yesActive-3EAR99-AVALANCHE RATEDFET General Purpose Power600VMOSFET (Metal Oxide)NOT SPECIFIED36ANOT SPECIFIED3Not Qualified1500W TcSingleENHANCEMENT MODE500WDRAINN-ChannelSWITCHING180m Ω @ 500mA, 10V4.5V @ 8mA9000pF @ 25V36A Tc325nC @ 25V45ns10V±20V60 ns100 ns36A20V600V--ROHS3 CompliantContains Lead-0.18Ohm144A-------4.5V--No SVHC-10mg8541.29.00.95
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