IXYS Integrated Circuits Division IXDN602SIA
- Part Number:
- IXDN602SIA
- Manufacturer:
- IXYS Integrated Circuits Division
- Ventron No:
- 3253718-IXDN602SIA
- Description:
- DUAL LOW SIDE MOSFET DRIVER
- Datasheet:
- IXDN602SIA
Description
The IXDF602/IXDI602/IXDN602 dual high-speed gate drivers are designed for driving MOSFETs and IGBTs. They offer a peak source/sink drive current of 2A, a wide operating voltage range of 4.5V to 35V, and an extended operating temperature range of -40°C to 125°C. The CMOS-compatible input withstands negative swings of up to 5V. Outputs can be connected in parallel for higher drive current. The drivers feature matched rise and fall times, low propagation delay time, and low 10μA supply current.
Features
2A peak source/sink drive current
Wide operating voltage range: 4.5V to 35V
Extended operating temperature range: -40°C to 125°C
CMOS-compatible input with negative swing immunity
Outputs can be connected in parallel for higher drive current
Matched rise and fall times
Low propagation delay time
Low 10μA supply current
Low output impedance
Applications
Efficient power MOSFET and IGBT switching
Switch mode power supplies
Motor controls
DC to DC converters
Class-D switching amplifiers
Pulse transformer drivers
The IXDF602/IXDI602/IXDN602 dual high-speed gate drivers are designed for driving MOSFETs and IGBTs. They offer a peak source/sink drive current of 2A, a wide operating voltage range of 4.5V to 35V, and an extended operating temperature range of -40°C to 125°C. The CMOS-compatible input withstands negative swings of up to 5V. Outputs can be connected in parallel for higher drive current. The drivers feature matched rise and fall times, low propagation delay time, and low 10μA supply current.
Features
2A peak source/sink drive current
Wide operating voltage range: 4.5V to 35V
Extended operating temperature range: -40°C to 125°C
CMOS-compatible input with negative swing immunity
Outputs can be connected in parallel for higher drive current
Matched rise and fall times
Low propagation delay time
Low 10μA supply current
Low output impedance
Applications
Efficient power MOSFET and IGBT switching
Switch mode power supplies
Motor controls
DC to DC converters
Class-D switching amplifiers
Pulse transformer drivers
IXYS Integrated Circuits Division IXDN602SIA technical specifications, attributes, parameters and parts with similar specifications to IXYS Integrated Circuits Division IXDN602SIA.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package8-SOIC
- Operating Temperature-55°C ~ 150°C (TJ)
- PackagingTube
- Part StatusActive
- Voltage - Supply4.5 V ~ 35 V
- Input TypeNon-Inverting
- FamilyPMIC - Gate Drivers
- Rise / Fall Time (Typ)7.5ns, 6.5ns
- Channel TypeIndependent
- Number of Drivers2
- Driven ConfigurationLow-Side
- Gate TypeIGBT, N-Channel, P-Channel MOSFET
- Current - Peak Output (Source, Sink)2A, 2A
- Logic Voltage - VIL, VIH0.8V, 3V
The three parts on the right have similar specifications to IXDN602SIA.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusVoltage - SupplyInput TypeFamilyRise / Fall Time (Typ)Channel TypeNumber of DriversDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)Logic Voltage - VIL, VIHSurface MountPublishedMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageReflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusPower SuppliesNominal Supply CurrentRise TimeFall Time (Typ)Interface IC TypeTurn On TimeOutput Peak Current Limit-NomHigh Side DriverTurn Off TimeHeight Seated (Max)LengthWidthRoHS StatusMountWeightJESD-609 CodeTerminal FinishMax Power DissipationOperating Supply VoltageOutput CurrentNumber of PinsTerminal PitchLead FreeView Compare
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IXDN602SIASurface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC-55°C ~ 150°C (TJ)TubeActive4.5 V ~ 35 VNon-InvertingPMIC - Gate Drivers7.5ns, 6.5nsIndependent2Low-SideIGBT, N-Channel, P-Channel MOSFET2A, 2A0.8V, 3V-----------------------------------------
-
Surface Mount6-VDFN Exposed Pad--55°C~150°C TJTape & Reel (TR)Obsolete4.5V~30VNon-Inverting-25ns 23nsSingle1Low-SideIGBT, N-Channel, P-Channel MOSFET9A 9A0.8V 2.4VYES20071 (Unlimited)6EAR99MOSFET DriversCMOSDUALNO LEADNOT SPECIFIED118VNOT SPECIFIEDIXD*5096R-PDSO-N6Not Qualified4.5/30V75mA45ns40 nsBUFFER OR INVERTER BASED MOSFET DRIVER0.055 µs9ANO0.04 µs0.95mm5mm3.99mmRoHS Compliant----------
-
Through HoleTO-220-5--55°C~150°C TJTubeObsolete4.5V~35VNon-Inverting-22ns 20nsSingle1Low-SideIGBT, N-Channel, P-Channel MOSFET14A 14A0.8V 3.5V-20041 (Unlimited)5EAR99----260118V35IXD*4143R-PSFM-T5Not Qualified-3mA27ns25 nsBUFFER OR INVERTER BASED PERIPHERAL DRIVER0.033 µs14A-0.034 µs---RoHS CompliantThrough Hole2.299997ge3Matte Tin (Sn)2W35V14A---
-
Through Hole8-DIP (0.300, 7.62mm)--55°C~150°C TJTubeObsolete4.5V~35VNon-Inverting-22ns 20nsSingle1Low-SideIGBT, N-Channel, P-Channel MOSFET14A 14A0.8V 3.5V-20041 (Unlimited)8EAR99--DUAL-260118V35IXD*4148-Not Qualified-3mA27ns25 nsBUFFER OR INVERTER BASED PERIPHERAL DRIVER0.033 µs14A-0.034 µs4.57mm9.59mm7.62mmRoHS CompliantThrough Hole599.989307mge3Matte Tin (Sn)833mW35V14A82.54mmLead Free
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