IXDN602SIA

IXYS Integrated Circuits Division IXDN602SIA

Part Number:
IXDN602SIA
Manufacturer:
IXYS Integrated Circuits Division
Ventron No:
3253718-IXDN602SIA
Description:
DUAL LOW SIDE MOSFET DRIVER
ECAD Model:
Datasheet:
IXDN602SIA

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Overview
Description
The IXDF602/IXDI602/IXDN602 dual high-speed gate drivers are designed for driving MOSFETs and IGBTs. They offer a peak source/sink drive current of 2A, a wide operating voltage range of 4.5V to 35V, and an extended operating temperature range of -40°C to 125°C. The CMOS-compatible input withstands negative swings of up to 5V. Outputs can be connected in parallel for higher drive current. The drivers feature matched rise and fall times, low propagation delay time, and low 10μA supply current.

Features
2A peak source/sink drive current
Wide operating voltage range: 4.5V to 35V
Extended operating temperature range: -40°C to 125°C
CMOS-compatible input with negative swing immunity
Outputs can be connected in parallel for higher drive current
Matched rise and fall times
Low propagation delay time
Low 10μA supply current
Low output impedance

Applications
Efficient power MOSFET and IGBT switching
Switch mode power supplies
Motor controls
DC to DC converters
Class-D switching amplifiers
Pulse transformer drivers
Specifications
IXYS Integrated Circuits Division IXDN602SIA technical specifications, attributes, parameters and parts with similar specifications to IXYS Integrated Circuits Division IXDN602SIA.
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package
    8-SOIC
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Packaging
    Tube
  • Part Status
    Active
  • Voltage - Supply
    4.5 V ~ 35 V
  • Input Type
    Non-Inverting
  • Family
    PMIC - Gate Drivers
  • Rise / Fall Time (Typ)
    7.5ns, 6.5ns
  • Channel Type
    Independent
  • Number of Drivers
    2
  • Driven Configuration
    Low-Side
  • Gate Type
    IGBT, N-Channel, P-Channel MOSFET
  • Current - Peak Output (Source, Sink)
    2A, 2A
  • Logic Voltage - VIL, VIH
    0.8V, 3V
Product Comparison
The three parts on the right have similar specifications to IXDN602SIA.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Part Status
    Voltage - Supply
    Input Type
    Family
    Rise / Fall Time (Typ)
    Channel Type
    Number of Drivers
    Driven Configuration
    Gate Type
    Current - Peak Output (Source, Sink)
    Logic Voltage - VIL, VIH
    Surface Mount
    Published
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Power Supplies
    Nominal Supply Current
    Rise Time
    Fall Time (Typ)
    Interface IC Type
    Turn On Time
    Output Peak Current Limit-Nom
    High Side Driver
    Turn Off Time
    Height Seated (Max)
    Length
    Width
    RoHS Status
    Mount
    Weight
    JESD-609 Code
    Terminal Finish
    Max Power Dissipation
    Operating Supply Voltage
    Output Current
    Number of Pins
    Terminal Pitch
    Lead Free
    View Compare
  • IXDN602SIA
    IXDN602SIA
    Surface Mount
    8-SOIC (0.154", 3.90mm Width)
    8-SOIC
    -55°C ~ 150°C (TJ)
    Tube
    Active
    4.5 V ~ 35 V
    Non-Inverting
    PMIC - Gate Drivers
    7.5ns, 6.5ns
    Independent
    2
    Low-Side
    IGBT, N-Channel, P-Channel MOSFET
    2A, 2A
    0.8V, 3V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXDN509D1T/R
    Surface Mount
    6-VDFN Exposed Pad
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    Obsolete
    4.5V~30V
    Non-Inverting
    -
    25ns 23ns
    Single
    1
    Low-Side
    IGBT, N-Channel, P-Channel MOSFET
    9A 9A
    0.8V 2.4V
    YES
    2007
    1 (Unlimited)
    6
    EAR99
    MOSFET Drivers
    CMOS
    DUAL
    NO LEAD
    NOT SPECIFIED
    1
    18V
    NOT SPECIFIED
    IXD*509
    6
    R-PDSO-N6
    Not Qualified
    4.5/30V
    75mA
    45ns
    40 ns
    BUFFER OR INVERTER BASED MOSFET DRIVER
    0.055 µs
    9A
    NO
    0.04 µs
    0.95mm
    5mm
    3.99mm
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXDN414CI
    Through Hole
    TO-220-5
    -
    -55°C~150°C TJ
    Tube
    Obsolete
    4.5V~35V
    Non-Inverting
    -
    22ns 20ns
    Single
    1
    Low-Side
    IGBT, N-Channel, P-Channel MOSFET
    14A 14A
    0.8V 3.5V
    -
    2004
    1 (Unlimited)
    5
    EAR99
    -
    -
    -
    -
    260
    1
    18V
    35
    IXD*414
    3
    R-PSFM-T5
    Not Qualified
    -
    3mA
    27ns
    25 ns
    BUFFER OR INVERTER BASED PERIPHERAL DRIVER
    0.033 µs
    14A
    -
    0.034 µs
    -
    -
    -
    RoHS Compliant
    Through Hole
    2.299997g
    e3
    Matte Tin (Sn)
    2W
    35V
    14A
    -
    -
    -
  • IXDN414PI
    Through Hole
    8-DIP (0.300, 7.62mm)
    -
    -55°C~150°C TJ
    Tube
    Obsolete
    4.5V~35V
    Non-Inverting
    -
    22ns 20ns
    Single
    1
    Low-Side
    IGBT, N-Channel, P-Channel MOSFET
    14A 14A
    0.8V 3.5V
    -
    2004
    1 (Unlimited)
    8
    EAR99
    -
    -
    DUAL
    -
    260
    1
    18V
    35
    IXD*414
    8
    -
    Not Qualified
    -
    3mA
    27ns
    25 ns
    BUFFER OR INVERTER BASED PERIPHERAL DRIVER
    0.033 µs
    14A
    -
    0.034 µs
    4.57mm
    9.59mm
    7.62mm
    RoHS Compliant
    Through Hole
    599.989307mg
    e3
    Matte Tin (Sn)
    833mW
    35V
    14A
    8
    2.54mm
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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