IXYS IXDI502PI

Description
The IXDF502, IXDI502, and IXDN502 are dual 2-Amp CMOS high-speed MOSFET gate drivers designed to drive IXYS MOSFETs and IGBTs. Each of the dual outputs can source and sink 2 Amps of peak current while producing voltage rise and fall times of less than 15ns. The input of each driver is TTL or CMOS compatible and is virtually immune to latch-up. Patented design innovations eliminate cross conduction and current "shoot-through." Improved speed and drive capabilities are further enhanced by very quick and matched rise and fall times.
The IXDF502 is configured with one gate driver inverting plus one gate driver non-inverting. The IXDI502 is configured as a dual inverting gate driver, and the IXDN502 is configured as a dual non-inverting gate driver.
The IXDF502, IXDI502, and IXDN502 are each available in the 8-Pin P-DIP (PI) package, the 8-Pin SOIC (SIA) package, and the 6-Lead DFN (D1) package, which occupies less than 65% of the board area of the 8-Pin SOIC.

Features
Built using the advantages and compatibility of CMOS and IXYS HDMOS processes
Latch-up protected up to 2 Amps
High 2A peak output current
Wide operating range: 4.5V to 30V
-55°C to 125°C extended operating temperature
High capacitive load drive capability: 1000pF in <10ns
Matched rise and fall times
Low propagation delay time
Low output impedance
Low supply current
Two drivers in single chip

Applications
Driving MOSFETs and IGBTs
Motor controls
Line drivers
Pulse generators
Local power ON/OFF switch
Switch mode power supplies (SMPS)
DC to DC converters
Pulse transformer driver
Class D switching amplifiers
Power charge pumps