IXYS IXA55I1200HJ
- Part Number:
- IXA55I1200HJ
- Manufacturer:
- IXYS
- Ventron No:
- 3587356-IXA55I1200HJ
- Description:
- IGBT 1200V 84A 290W TO247
- ECAD Model:
-
- Datasheet:
- IXA55I1200HJ
IXYS IXA55I1200HJ technical specifications, attributes, parameters and parts with similar specifications to IXYS IXA55I1200HJ.
- Factory Lead Time28 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseISOPLUS247™
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published2009
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation290W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation290W
- Case ConnectionISOLATED
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.2kV
- Max Collector Current84A
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Collector Emitter Saturation Voltage2.1V
- Turn On Time110 ns
- Test Condition600V, 50A, 15 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 50A
- Turn Off Time-Nom (toff)350 ns
- IGBT TypePT
- Gate Charge190nC
- Switching Energy4.5mJ (on), 5.5mJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6.5V
- Height21.34mm
- Length16.13mm
- Width5.21mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
IXA55I1200HJ Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXA55I1200HJ or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXA55I1200HJ. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXA55I1200HJ or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXA55I1200HJ. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXA55I1200HJ More Descriptions
Trans IGBT Chip N-CH 1200V 84A 290000mW 3-Pin(3 Tab) ISOPLUS 247
IXYS SEMICONDUCTOR IXA55I1200HJ IGBT Single Transistor, 84 A, 2.1 V, 290 W, 1.2 kV, TO-247AD, 3 Pins
IGBT,1200V,84A,ISOPLUS247; DC Collector Current: 84A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 290W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AD; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (12-Jan-2017); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Max: 290W; Transistor Type: IGBT
IXYS SEMICONDUCTOR IXA55I1200HJ IGBT Single Transistor, 84 A, 2.1 V, 290 W, 1.2 kV, TO-247AD, 3 Pins
IGBT,1200V,84A,ISOPLUS247; DC Collector Current: 84A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 290W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AD; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (12-Jan-2017); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Max: 290W; Transistor Type: IGBT
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