IXYS IXA45IF1200HB
- Part Number:
- IXA45IF1200HB
- Manufacturer:
- IXYS
- Ventron No:
- 3587386-IXA45IF1200HB
- Description:
- IGBT 1200V 78A 325W TO247
- ECAD Model:
-
- Datasheet:
- IXA45IF1200HB
IXYS IXA45IF1200HB technical specifications, attributes, parameters and parts with similar specifications to IXYS IXA45IF1200HB.
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published2001
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation325W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation325W
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.2kV
- Max Collector Current78A
- Reverse Recovery Time350ns
- JEDEC-95 CodeTO-247AD
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Collector Emitter Saturation Voltage1.8V
- Turn On Time110 ns
- Test Condition600V, 35A, 27 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 35A
- Turn Off Time-Nom (toff)350 ns
- IGBT TypePT
- Gate Charge106nC
- Switching Energy3.8mJ (on), 4.1mJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6.5V
- Height21.46mm
- Length16.26mm
- Width5.3mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
IXA45IF1200HB Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXA45IF1200HB or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXA45IF1200HB. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXA45IF1200HB or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXA45IF1200HB. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXA45IF1200HB More Descriptions
N-Channel 1200 V 78 A 325 W Through Hole XPT IGBT Transistor - TO-247
IXYS SEMICONDUCTOR IXA45IF1200HB IGBT Single Transistor, 78 A, 2.1 V, 325 W, 1.2 kV, TO-247AD, 3 Pins
IGBT,1200V,74A,TO-247; Transistor Type:IGBT; DC Collector Current:78A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Pd:325W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:-; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to 150°C; Power Dissipation Max:325W
IXYS SEMICONDUCTOR IXA45IF1200HB IGBT Single Transistor, 78 A, 2.1 V, 325 W, 1.2 kV, TO-247AD, 3 Pins
IGBT,1200V,74A,TO-247; Transistor Type:IGBT; DC Collector Current:78A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Pd:325W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:-; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to 150°C; Power Dissipation Max:325W
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