ISSI, Integrated Silicon Solution Inc IS66WVE1M16EBLL-70BLI
- Part Number:
- IS66WVE1M16EBLL-70BLI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3232745-IS66WVE1M16EBLL-70BLI
- Description:
- IC PSRAM 16MBIT 60NS 48BGA
- ECAD Model:
-
- Datasheet:
- IS66WVE1M16EBLL-70BLI
ISSI, Integrated Silicon Solution Inc IS66WVE1M16EBLL-70BLI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS66WVE1M16EBLL-70BLI.
- Factory Lead Time10 Weeks
- Mounting TypeSurface Mount
- Package / Case48-TFBGA
- Surface MountYES
- Number of Pins48
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- TechnologyPSRAM (Pseudo SRAM)
- Voltage - Supply2.7V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Terminal Pitch0.75mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size16Mb 1M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeASYNCHRONOUS
- Memory FormatPSRAM
- Memory InterfaceParallel
- Memory Width16
- Write Cycle Time - Word, Page70ns
- Address Bus Width20b
- Density16 Mb
- Access Time (Max)70 ns
- Length8mm
- RoHS StatusROHS3 Compliant
IS66WVE1M16EBLL-70BLI Overview
The Surface Mount technology is widely used in electronic devices, and this particular part is no exception. With an operating temperature range of -40°C~85°C TA, it can withstand extreme conditions without compromising its performance. Its Part Status is Active, meaning it is readily available for purchase. The Moisture Sensitivity Level (MSL) is 3, which indicates that it can withstand up to 168 hours of exposure to moisture without any damage. This PSRAM (Pseudo SRAM) has a density of 16 Mb and a length of 8mm, making it a compact and efficient option. It is also RoHS3 Compliant, ensuring that it meets the latest environmental standards. Although the Peak Reflow Temperature (Cel) is NOT SPECIFIED, this part is still a reliable and high-quality choice with its 1 port design.
IS66WVE1M16EBLL-70BLI Features
Package / Case: 48-TFBGA
48 Pins
IS66WVE1M16EBLL-70BLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS66WVE1M16EBLL-70BLI Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
The Surface Mount technology is widely used in electronic devices, and this particular part is no exception. With an operating temperature range of -40°C~85°C TA, it can withstand extreme conditions without compromising its performance. Its Part Status is Active, meaning it is readily available for purchase. The Moisture Sensitivity Level (MSL) is 3, which indicates that it can withstand up to 168 hours of exposure to moisture without any damage. This PSRAM (Pseudo SRAM) has a density of 16 Mb and a length of 8mm, making it a compact and efficient option. It is also RoHS3 Compliant, ensuring that it meets the latest environmental standards. Although the Peak Reflow Temperature (Cel) is NOT SPECIFIED, this part is still a reliable and high-quality choice with its 1 port design.
IS66WVE1M16EBLL-70BLI Features
Package / Case: 48-TFBGA
48 Pins
IS66WVE1M16EBLL-70BLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS66WVE1M16EBLL-70BLI Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
IS66WVE1M16EBLL-70BLI More Descriptions
Cellular RAM Pseudo SRAM, 1Mx16, 1.7 to 1.95V, 70ns, TFBGA-48ISSI SCT
PSRAM Async 16M-Bit 1M x 16 70ns 48-Pin TFBGA
IC PSRAM 16MBIT PARALLEL 48TFBGA
16Mb,pseudo Sram,asynch/Page, 1M X 16,70Ns,vdd 2.7V3.6V, Vddq 2.7V3.6V,48 Ball Bga (6X8 Mm), Rohs |Integrated Silicon Solution (Issi) IS66WVE1M16EBLL-70BLI
PSRAM Async 16M-Bit 1M x 16 70ns 48-Pin TFBGA
IC PSRAM 16MBIT PARALLEL 48TFBGA
16Mb,pseudo Sram,asynch/Page, 1M X 16,70Ns,vdd 2.7V3.6V, Vddq 2.7V3.6V,48 Ball Bga (6X8 Mm), Rohs |Integrated Silicon Solution (Issi) IS66WVE1M16EBLL-70BLI
The three parts on the right have similar specifications to IS66WVE1M16EBLL-70BLI.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsTerminal PitchTime@Peak Reflow Temperature-Max (s)Supply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeMemory FormatMemory InterfaceMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityAccess Time (Max)LengthRoHS StatusSupply VoltageJESD-30 CodeClock FrequencyOrganizationMemory DensityHeight Seated (Max)WidthView Compare
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IS66WVE1M16EBLL-70BLI10 WeeksSurface Mount48-TFBGAYES48-40°C~85°C TATrayActive3 (168 Hours)48PSRAM (Pseudo SRAM)2.7V~3.6VBOTTOMNOT SPECIFIED10.75mmNOT SPECIFIED3.6V2.7V16Mb 1M x 161VolatileASYNCHRONOUSPSRAMParallel1670ns20b16 Mb70 ns8mmROHS3 Compliant-------- -
10 WeeksSurface Mount24-TBGAYES--40°C~85°C TATape & Reel (TR)Active3 (168 Hours)24PSRAM (Pseudo SRAM)1.7V~1.95VBOTTOMNOT SPECIFIED11mmNOT SPECIFIED1.95V1.7V64Mb 8M x 8-VolatileSYNCHRONOUSPSRAMParallel836ns--36 ns8mmROHS3 Compliant1.8VR-PBGA-B24166MHz8MX867108864 bit1.2mm6mm
-
10 WeeksSurface Mount54-VFBGAYES--40°C~85°C TATape & Reel (TR)Active3 (168 Hours)54PSRAM (Pseudo SRAM)1.7V~1.95VBOTTOM-10.75mm-1.95V1.7V32Mb 2M x 16-VolatileASYNCHRONOUSPSRAMParallel1670ns--70 ns8mmROHS3 Compliant-R-PBGA-B54-2MX1633554432 bit1mm6mm
-
10 WeeksSurface Mount24-TBGAYES--40°C~85°C TATape & Reel (TR)Active3 (168 Hours)24PSRAM (Pseudo SRAM)2.7V~3.6VBOTTOMNOT SPECIFIED11mmNOT SPECIFIED3.6V2.7V128Mb 16M x 8-VolatileSYNCHRONOUSPSRAMParallel840ns---8mmROHS3 Compliant3VR-PBGA-B24100MHz16MX8134217728 bit1.2mm6mm
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