ISSI, Integrated Silicon Solution Inc IS66WVE1M16EBLL-70BLI-TR
- Part Number:
- IS66WVE1M16EBLL-70BLI-TR
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3232126-IS66WVE1M16EBLL-70BLI-TR
- Description:
- IC PSRAM 16MBIT 60NS 48BGA
- ECAD Model:
-
- Datasheet:
- IS66WVE1M16EBLL-70BLI-TR
ISSI, Integrated Silicon Solution Inc IS66WVE1M16EBLL-70BLI-TR technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS66WVE1M16EBLL-70BLI-TR.
- Factory Lead Time10 Weeks
- Mounting TypeSurface Mount
- Package / Case48-TFBGA
- Surface MountYES
- Number of Pins48
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- TechnologyPSRAM (Pseudo SRAM)
- Voltage - Supply2.7V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Terminal Pitch0.75mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size16Mb 1M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeASYNCHRONOUS
- Memory FormatPSRAM
- Memory InterfaceParallel
- Memory Width16
- Write Cycle Time - Word, Page70ns
- Address Bus Width20b
- Density16 Mb
- Access Time (Max)70 ns
- Length8mm
- RoHS StatusROHS3 Compliant
IS66WVE1M16EBLL-70BLI-TR Overview
The PSRAM (Pseudo SRAM) is a type of memory technology that offers a memory size of 16Mb 1M x 16, with a density of 16 Mb. This particular PSRAM has a supply voltage-max (Vsup) of 3.6V, making it a low-power option for electronic devices. It has a total of 48 pins and 48 terminations, providing a reliable connection for data transfer. Additionally, the Pbfree code indicates that this PSRAM is environmentally friendly. With a Moisture Sensitivity Level (MSL) of 3 (168 Hours), this PSRAM can withstand moderate levels of moisture without compromising its performance. Overall, this PSRAM is a versatile memory solution with 1 port and a memory width of 16, making it suitable for a wide range of electronic devices.
IS66WVE1M16EBLL-70BLI-TR Features
Package / Case: 48-TFBGA
48 Pins
IS66WVE1M16EBLL-70BLI-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS66WVE1M16EBLL-70BLI-TR Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
The PSRAM (Pseudo SRAM) is a type of memory technology that offers a memory size of 16Mb 1M x 16, with a density of 16 Mb. This particular PSRAM has a supply voltage-max (Vsup) of 3.6V, making it a low-power option for electronic devices. It has a total of 48 pins and 48 terminations, providing a reliable connection for data transfer. Additionally, the Pbfree code indicates that this PSRAM is environmentally friendly. With a Moisture Sensitivity Level (MSL) of 3 (168 Hours), this PSRAM can withstand moderate levels of moisture without compromising its performance. Overall, this PSRAM is a versatile memory solution with 1 port and a memory width of 16, making it suitable for a wide range of electronic devices.
IS66WVE1M16EBLL-70BLI-TR Features
Package / Case: 48-TFBGA
48 Pins
IS66WVE1M16EBLL-70BLI-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS66WVE1M16EBLL-70BLI-TR Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
IS66WVE1M16EBLL-70BLI-TR More Descriptions
PSRAM (Pseudo SRAM) Memory IC 16Mb (1M x 16) Parallel 70 ns 48-TFBGA (6x8)
PSRAM Async 16M-Bit 1M x 16 70ns 48-Pin TFBGA T/R
IC PSRAM 16MBIT PARALLEL 48TFBGA
16Mb,pseudo Sram,asynch/Page, 1M X 16,70Ns,vdd 2.7V3.6V, Vddq 2.7V3.6V,48 Ball Bga (6X8 Mm), Rohs |Integrated Silicon Solution (Issi) IS66WVE1M16EBLL-70BLI-TR
PSRAM Async 16M-Bit 1M x 16 70ns 48-Pin TFBGA T/R
IC PSRAM 16MBIT PARALLEL 48TFBGA
16Mb,pseudo Sram,asynch/Page, 1M X 16,70Ns,vdd 2.7V3.6V, Vddq 2.7V3.6V,48 Ball Bga (6X8 Mm), Rohs |Integrated Silicon Solution (Issi) IS66WVE1M16EBLL-70BLI-TR
The three parts on the right have similar specifications to IS66WVE1M16EBLL-70BLI-TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsTerminal PitchTime@Peak Reflow Temperature-Max (s)Supply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeMemory FormatMemory InterfaceMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityAccess Time (Max)LengthRoHS StatusJESD-30 CodeOrganizationMemory DensityHeight Seated (Max)WidthSupply VoltageClock FrequencyView Compare
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IS66WVE1M16EBLL-70BLI-TR10 WeeksSurface Mount48-TFBGAYES48-40°C~85°C TATape & Reel (TR)yesActive3 (168 Hours)48PSRAM (Pseudo SRAM)2.7V~3.6VBOTTOMNOT SPECIFIED10.75mmNOT SPECIFIED3.6V2.7V16Mb 1M x 161VolatileASYNCHRONOUSPSRAMParallel1670ns20b16 Mb70 ns8mmROHS3 Compliant-------- -
10 WeeksSurface Mount48-TFBGAYES--40°C~85°C TATape & Reel (TR)-Active3 (168 Hours)48PSRAM (Pseudo SRAM)1.7V~1.95VBOTTOMNOT SPECIFIED10.75mmNOT SPECIFIED1.95V1.7V32Mb 2M x 16-VolatileASYNCHRONOUSPSRAMParallel1670ns--70 ns8mmROHS3 CompliantR-PBGA-B482MX1633554432 bit1.2mm6mm--
-
10 WeeksSurface Mount54-VFBGA---40°C~85°C TCTape & Reel (TR)-Active3 (168 Hours)-PSRAM (Pseudo SRAM)1.7V~1.95V-------64Mb 4M x 16-Volatile-PSRAMParallel-70ns----ROHS3 Compliant-------
-
10 WeeksSurface Mount24-TBGAYES--40°C~85°C TATape & Reel (TR)-Active3 (168 Hours)24PSRAM (Pseudo SRAM)2.7V~3.6VBOTTOMNOT SPECIFIED11mmNOT SPECIFIED3.6V2.7V128Mb 16M x 8-VolatileSYNCHRONOUSPSRAMParallel840ns---8mmROHS3 CompliantR-PBGA-B2416MX8134217728 bit1.2mm6mm3V100MHz
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