ISSI, Integrated Silicon Solution Inc IS62WV6416ALL-55BI
- Part Number:
- IS62WV6416ALL-55BI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3233208-IS62WV6416ALL-55BI
- Description:
- IC SRAM 1MBIT 55NS 48BGA
- ECAD Model:
-
- Datasheet:
- IS62WV6416(A,B)LL
ISSI, Integrated Silicon Solution Inc IS62WV6416ALL-55BI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS62WV6416ALL-55BI.
- Mounting TypeSurface Mount
- Package / Case48-TFBGA
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- HTS Code8542.32.00.41
- TechnologySRAM - Asynchronous
- Voltage - Supply1.7V~2.2V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.75mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count48
- JESD-30 CodeR-PBGA-B48
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)2.2V
- Power Supplies1.8/2V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size1Mb 64K x 16
- Memory TypeVolatile
- Supply Current-Max0.01mA
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization64KX16
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page55ns
- Standby Current-Max0.000005A
- Memory Density1048576 bit
- Access Time (Max)55 ns
- I/O TypeCOMMON
- Standby Voltage-Min1.2V
- Height Seated (Max)1.2mm
- Length8mm
- Width6mm
- RoHS StatusNon-RoHS Compliant
IS62WV6416ALL-55BI Overview
The latest technology in SRAM memory modules boasts impressive features such as asynchronous operation, a supply voltage range of 1.7V to 2.2V, and a terminal position at the bottom with a pitch of 0.75mm. These specifications are in compliance with the JESD-30 code of R-PBGA-B48, ensuring high-quality and reliable performance. The power supplies for this technology are 1.8/2V, with a minimum supply voltage of 1.7V. This allows for a memory density of 1048576 bits, making it suitable for a wide range of applications. Additionally, the standby voltage-min is 1.2V, providing efficient power management. With a width of 6mm, this technology offers a compact and efficient solution for memory storage needs.
IS62WV6416ALL-55BI Features
Package / Case: 48-TFBGA
I/O Type: COMMON
IS62WV6416ALL-55BI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS62WV6416ALL-55BI Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
The latest technology in SRAM memory modules boasts impressive features such as asynchronous operation, a supply voltage range of 1.7V to 2.2V, and a terminal position at the bottom with a pitch of 0.75mm. These specifications are in compliance with the JESD-30 code of R-PBGA-B48, ensuring high-quality and reliable performance. The power supplies for this technology are 1.8/2V, with a minimum supply voltage of 1.7V. This allows for a memory density of 1048576 bits, making it suitable for a wide range of applications. Additionally, the standby voltage-min is 1.2V, providing efficient power management. With a width of 6mm, this technology offers a compact and efficient solution for memory storage needs.
IS62WV6416ALL-55BI Features
Package / Case: 48-TFBGA
I/O Type: COMMON
IS62WV6416ALL-55BI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS62WV6416ALL-55BI Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
IS62WV6416ALL-55BI More Descriptions
SRAM Chip Async Single 1.8V 1M-Bit 64K x 16 55ns 48-Pin mBGA
IC SRAM 1MBIT PARALLEL 48MINIBGA
SRAM 1M (64Kx16) 55ns Async SRAM
IC SRAM 1MBIT PARALLEL 48MINIBGA
SRAM 1M (64Kx16) 55ns Async SRAM
The three parts on the right have similar specifications to IS62WV6416ALL-55BI.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeMemory TypeSupply Current-MaxMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityAccess Time (Max)I/O TypeStandby Voltage-MinHeight Seated (Max)LengthWidthRoHS StatusMountNumber of PinsSupplier Device PackageMax Operating TemperatureMin Operating TemperatureOperating Supply VoltageInterfaceMax Supply VoltageMin Supply VoltageNumber of PortsNominal Supply CurrentAccess TimeAddress Bus WidthDensitySync/AsyncWord SizeView Compare
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IS62WV6416ALL-55BISurface Mount48-TFBGAYES-40°C~85°C TATraye0noActive3 (168 Hours)48EAR99Tin/Lead (Sn/Pb)8542.32.00.41SRAM - Asynchronous1.7V~2.2VBOTTOMNOT SPECIFIED11.8V0.75mmNOT SPECIFIED48R-PBGA-B48Not Qualified2.2V1.8/2V1.7V1Mb 64K x 16Volatile0.01mASRAMParallel64KX163-STATE1655ns0.000005A1048576 bit55 nsCOMMON1.2V1.2mm8mm6mmNon-RoHS Compliant----------------- -
Surface Mount32-TFSOP (0.724, 18.40mm Width)--40°C~85°C TATape & Reel (TR)--Active2 (1 Year)----SRAM - Asynchronous2.5V~3.6V------------4Mb 512K x 8Volatile-SRAMParallel---55ns--------Non-RoHS CompliantSurface Mount3232-TSOP I85°C-40°C3.3VParallel3.6V2.5V145mA55ns19b4 MbAsynchronous8b
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Surface Mount32-TFSOP (0.465, 11.80mm Width)--40°C~85°C TATape & Reel (TR)--Active2 (1 Year)32---SRAM - Asynchronous2.5V~3.6VDUAL---0.5mm---Not Qualified---2Mb 256K x 8Volatile-SRAMParallel256KX83-STATE870ns--70 nsCOMMON1V---Non-RoHS CompliantSurface Mount32---3.3V---115mA-18b2 MbAsynchronous8b
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Surface Mount28-SOP--40°C~85°C TATape & Reel (TR)--Obsolete2 (1 Year)----SRAM - Asynchronous3.135V~3.465V------------256Kb 32K x 8Volatile-SRAMParallel---70ns--------Non-RoHS Compliant-2828-SOP85°C-40°C-Parallel3.465V3.135V--70ns----
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ISSI, Integrated Silicon Solution Inc
Surface Mount Memory IC 4 Mb kb 45mA mA 8b b
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ISSI, Integrated Silicon Solution Inc
Surface Mount Memory IC 2 Mb kb 15mA mA 8b b
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