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ISSI, Integrated Silicon Solution Inc IS61WV5128EDBLL-10BLI
- Part Number:
- IS61WV5128EDBLL-10BLI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3228677-IS61WV5128EDBLL-10BLI
- Description:
- IC SRAM 4MBIT 10NS 36TFBGA
- ECAD Model:
-
- Datasheet:
- IS61WV5128EDBLL-10BLI
ISSI, Integrated Silicon Solution Inc IS61WV5128EDBLL-10BLI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61WV5128EDBLL-10BLI.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case36-TFBGA
- Surface MountYES
- Number of Pins36
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations36
- TechnologySRAM - Asynchronous
- Voltage - Supply2.4V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.75mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count36
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.4V
- Memory Size4Mb 512K x 8
- Number of Ports1
- Nominal Supply Current35mA
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Memory Width8
- Write Cycle Time - Word, Page10ns
- Address Bus Width19b
- Density4 Mb
- Sync/AsyncAsynchronous
- Word Size8b
- Length8mm
- RoHS StatusROHS3 Compliant
IS61WV5128EDBLL-10BLI Overview
The part status of this particular technology is currently active, meaning it is readily available for use. The technology itself is SRAM - Asynchronous, which refers to its ability to operate independently of a clock signal. The terminal position for this component is located at the bottom, making it easy to install and connect in a circuit. The peak reflow temperature for this technology is not specified, but it is important to note that it should not exceed a certain temperature to avoid damage. Similarly, the time at peak reflow temperature is also not specified. This component has 36 pins and a memory size of 4Mb 512K x 8, making it suitable for storing large amounts of data. Its nominal supply current is 35mA, and it falls under the category of volatile memory, meaning it requires power to retain data. The address bus width for this technology is 19b, allowing for efficient and accurate data retrieval.
IS61WV5128EDBLL-10BLI Features
Package / Case: 36-TFBGA
36 Pins
IS61WV5128EDBLL-10BLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61WV5128EDBLL-10BLI Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
The part status of this particular technology is currently active, meaning it is readily available for use. The technology itself is SRAM - Asynchronous, which refers to its ability to operate independently of a clock signal. The terminal position for this component is located at the bottom, making it easy to install and connect in a circuit. The peak reflow temperature for this technology is not specified, but it is important to note that it should not exceed a certain temperature to avoid damage. Similarly, the time at peak reflow temperature is also not specified. This component has 36 pins and a memory size of 4Mb 512K x 8, making it suitable for storing large amounts of data. Its nominal supply current is 35mA, and it falls under the category of volatile memory, meaning it requires power to retain data. The address bus width for this technology is 19b, allowing for efficient and accurate data retrieval.
IS61WV5128EDBLL-10BLI Features
Package / Case: 36-TFBGA
36 Pins
IS61WV5128EDBLL-10BLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61WV5128EDBLL-10BLI Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
IS61WV5128EDBLL-10BLI More Descriptions
SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 36-Pin Mini-BGA
Surface Mount Tray SRAM - Asynchronous SRAM ic memory 10ns 8mm 35mA 4Mb
Serial SRAM, 512Kx8, 2.4 to 3.6V, BGA-48, RoHSISSI SCT
4Mb,high-Speed/Low Power,async With Ecc,512K X 8,10Ns/2.4V-3.6V,36 Ball Mbga (6X8 Mm), Rohs |Integrated Silicon Solution (Issi) IS61WV5128EDBLL-10BLI
2.4V~3.6V 4Mbit TFBGA-36(6x8) SRAM ROHS
IC SRAM 4MBIT PARALLEL 36TFBGA
Surface Mount Tray SRAM - Asynchronous SRAM ic memory 10ns 8mm 35mA 4Mb
Serial SRAM, 512Kx8, 2.4 to 3.6V, BGA-48, RoHSISSI SCT
4Mb,high-Speed/Low Power,async With Ecc,512K X 8,10Ns/2.4V-3.6V,36 Ball Mbga (6X8 Mm), Rohs |Integrated Silicon Solution (Issi) IS61WV5128EDBLL-10BLI
2.4V~3.6V 4Mbit TFBGA-36(6x8) SRAM ROHS
IC SRAM 4MBIT PARALLEL 36TFBGA
The three parts on the right have similar specifications to IS61WV5128EDBLL-10BLI.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsNominal Supply CurrentMemory TypeMemory FormatMemory InterfaceMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensitySync/AsyncWord SizeLengthRoHS StatusECCN CodeAdditional FeatureHTS CodeClock FrequencyOrganizationMemory DensityAccess Time (Max)Height Seated (Max)WidthReach Compliance CodeJESD-30 CodeAccess TimeView Compare
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IS61WV5128EDBLL-10BLI8 WeeksSurface Mount36-TFBGAYES36-40°C~85°C TATrayActive3 (168 Hours)36SRAM - Asynchronous2.4V~3.6VBOTTOMNOT SPECIFIED13V0.75mmNOT SPECIFIED363.6V2.4V4Mb 512K x 8135mAVolatileSRAMParallel810ns19b4 MbAsynchronous8b8mmROHS3 Compliant------------- -
12 WeeksSurface Mount165-LBGAYES1650°C~70°C TATrayActive3 (168 Hours)165SRAM - Synchronous, DDR II1.71V~1.89VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIED1651.89V1.71V72Mb 4M x 18--VolatileSRAMParallel18-----17mmROHS3 Compliant3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41250MHz4MX1875497472 bit0.45 ns1.4mm15mm---
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12 WeeksSurface Mount165-LBGAYES1650°C~70°C TATrayActive3 (168 Hours)165SRAM - Synchronous, DDR II1.71V~1.89VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIED1651.89V1.71V72Mb 4M x 18--VolatileSRAMParallel18-----17mmROHS3 Compliant3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41300MHz4MX1875497472 bit0.45 ns1.4mm15mm---
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-Surface Mount165-LBGAYES--40°C~85°C TATrayLast Time Buy3 (168 Hours)165SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM-11.8V1mm-1651.89V1.71V72Mb 4M x 18--VolatileSRAMParallel18-----17mm-3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41300MHz4MX1875497472 bit-1.4mm15mmcompliantR-PBGA-B1651.48ns
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ISSI, Integrated Silicon Solution Inc
5V V Surface Mount 32 Pin Memory IC 4 Mb kb 20.75mm mm 15mA mA 8b b
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