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ISSI, Integrated Silicon Solution Inc IS61WV5128EDBLL-10BLI-TR
- Part Number:
- IS61WV5128EDBLL-10BLI-TR
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3232742-IS61WV5128EDBLL-10BLI-TR
- Description:
- IC SRAM 4MBIT 10NS 36TFBGA
- ECAD Model:
-
- Datasheet:
- IS61WV5128EDBLL-10BLI-TR
ISSI, Integrated Silicon Solution Inc IS61WV5128EDBLL-10BLI-TR technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61WV5128EDBLL-10BLI-TR.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case36-TFBGA
- Number of Pins36
- Supplier Device Package36-TFBGA (6x8)
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Max Operating Temperature85°C
- Min Operating Temperature-40°C
- TechnologySRAM - Asynchronous
- Voltage - Supply2.4V~3.6V
- InterfaceParallel
- Max Supply Voltage3.6V
- Min Supply Voltage2.4V
- Memory Size4Mb 512K x 8
- Memory TypeVolatile
- Access Time10ns
- Memory FormatSRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page10ns
- RoHS StatusROHS3 Compliant
IS61WV5128EDBLL-10BLI-TR Overview
The mounting type for this particular component is surface mount, meaning it can be easily attached to a circuit board without the need for any additional hardware. The package or case for this component is a 36-TFBGA, which refers to the size and shape of the package. It is commonly used in small electronic devices due to its compact size. The packaging for this component is tape and reel, which allows for easy handling and storage. This part is currently active, meaning it is readily available for purchase. Its moisture sensitivity level is 3, indicating that it can withstand exposure to moisture for up to 168 hours. The interface for this component is parallel, and it is a volatile memory type with an access time of 10ns. The memory format is SRAM, and the memory interface is also parallel, making it suitable for high-speed data transfer.
IS61WV5128EDBLL-10BLI-TR Features
Package / Case: 36-TFBGA
36 Pins
IS61WV5128EDBLL-10BLI-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61WV5128EDBLL-10BLI-TR Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
The mounting type for this particular component is surface mount, meaning it can be easily attached to a circuit board without the need for any additional hardware. The package or case for this component is a 36-TFBGA, which refers to the size and shape of the package. It is commonly used in small electronic devices due to its compact size. The packaging for this component is tape and reel, which allows for easy handling and storage. This part is currently active, meaning it is readily available for purchase. Its moisture sensitivity level is 3, indicating that it can withstand exposure to moisture for up to 168 hours. The interface for this component is parallel, and it is a volatile memory type with an access time of 10ns. The memory format is SRAM, and the memory interface is also parallel, making it suitable for high-speed data transfer.
IS61WV5128EDBLL-10BLI-TR Features
Package / Case: 36-TFBGA
36 Pins
IS61WV5128EDBLL-10BLI-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61WV5128EDBLL-10BLI-TR Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
IS61WV5128EDBLL-10BLI-TR More Descriptions
SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 10 ns 36-TFBGA (6x8)
SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 10ns 36-Pin TFBGA T/R
2.4V~3.6V 4Mbit TFBGA-36(6x8) SRAM ROHS
SRAM 4Mb, 2.4v-3.6v, 10ns 512K x 8 Async SRAM
IC SRAM 4MBIT PARALLEL 36TFBGA
4Mb,high-Speed/Low Power,async With Ecc,512K X 8,10Ns/2.4V-3.6V,36 Ball Mbga (6X8 Mm), Rohs |Integrated Silicon Solution (Issi) IS61WV5128EDBLL-10BLI-TR
SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 10ns 36-Pin TFBGA T/R
2.4V~3.6V 4Mbit TFBGA-36(6x8) SRAM ROHS
SRAM 4Mb, 2.4v-3.6v, 10ns 512K x 8 Async SRAM
IC SRAM 4MBIT PARALLEL 36TFBGA
4Mb,high-Speed/Low Power,async With Ecc,512K X 8,10Ns/2.4V-3.6V,36 Ball Mbga (6X8 Mm), Rohs |Integrated Silicon Solution (Issi) IS61WV5128EDBLL-10BLI-TR
The three parts on the right have similar specifications to IS61WV5128EDBLL-10BLI-TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyVoltage - SupplyInterfaceMax Supply VoltageMin Supply VoltageMemory SizeMemory TypeAccess TimeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusSurface MountNumber of TerminationsECCN CodeAdditional FeatureHTS CodeTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Clock FrequencyOrganizationMemory WidthMemory DensityAccess Time (Max)LengthHeight Seated (Max)WidthOperating Supply VoltageNumber of PortsNominal Supply CurrentAddress Bus WidthDensitySync/AsyncWord SizeRadiation HardeningView Compare
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IS61WV5128EDBLL-10BLI-TR8 WeeksSurface Mount36-TFBGA3636-TFBGA (6x8)-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)85°C-40°CSRAM - Asynchronous2.4V~3.6VParallel3.6V2.4V4Mb 512K x 8Volatile10nsSRAMParallel10nsROHS3 Compliant------------------------------- -
12 WeeksSurface Mount165-LBGA165-0°C~70°C TATrayActive3 (168 Hours)--SRAM - Synchronous, DDR II1.71V~1.89V---72Mb 4M x 18Volatile-SRAMParallel-ROHS3 CompliantYES1653A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41BOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIED1651.89V1.71V250MHz4MX181875497472 bit0.45 ns17mm1.4mm15mm--------
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12 WeeksSurface Mount165-LBGA165-0°C~70°C TATrayActive3 (168 Hours)--SRAM - Synchronous, DDR II1.71V~1.89V---72Mb 4M x 18Volatile-SRAMParallel-ROHS3 CompliantYES1653A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41BOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIED1651.89V1.71V300MHz4MX181875497472 bit0.45 ns17mm1.4mm15mm--------
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8 WeeksSurface Mount44-BSOJ (0.400, 10.16mm Width)4444-SOJ-40°C~85°C TATape & Reel (TR)Active2 (1 Year)85°C-40°CSRAM - Asynchronous4.5V~5.5VParallel5.5V4.5V4Mb 256K x 16Volatile10nsSRAMParallel10nsROHS3 Compliant----------------------5V150mA18b4 MbAsynchronous16bNo
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ISSI, Integrated Silicon Solution Inc
5V V Surface Mount 32 Pin Memory IC 4 Mb kb 20.75mm mm 15mA mA 8b b
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