ISSI, Integrated Silicon Solution Inc IS61WV5128BLL-10KLI-TR
- Part Number:
- IS61WV5128BLL-10KLI-TR
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3232943-IS61WV5128BLL-10KLI-TR
- Description:
- IC SRAM 4MBIT 10NS 36SOJ
- ECAD Model:
-
- Datasheet:
- IS61WV5128BLL-10KLI-TR
ISSI, Integrated Silicon Solution Inc IS61WV5128BLL-10KLI-TR technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61WV5128BLL-10KLI-TR.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case36-BSOJ (0.400, 10.16mm Width)
- Number of Pins36
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySRAM - Asynchronous
- Voltage - Supply2.4V~3.6V
- Memory Size4Mb 512K x 8
- Number of Ports1
- Nominal Supply Current40mA
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page10ns
- Address Bus Width19b
- Density4 Mb
- Sync/AsyncAsynchronous
- Word Size8b
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
IS61WV5128BLL-10KLI-TR Overview
Our product features a surface mount mounting type, making it easy to install and suitable for a variety of applications. It has an operating temperature range of -40°C to 85°C TA, ensuring reliable performance in extreme environments. With a moisture sensitivity level of 3 (168 hours), our product is resistant to moisture and can withstand harsh conditions. The technology used is SRAM - Asynchronous, providing fast and efficient data storage. With a memory size of 4Mb 512K x 8, our product offers ample storage capacity. It has a nominal supply current of 40mA, making it energy efficient. The memory format is SRAM and the interface is parallel, allowing for seamless integration with other devices. The write cycle time for word and page is 10ns, ensuring quick data transfer. Our product is also ROHS3 compliant, meeting industry standards for environmental safety.
IS61WV5128BLL-10KLI-TR Features
Package / Case: 36-BSOJ (0.400, 10.16mm Width)
36 Pins
IS61WV5128BLL-10KLI-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61WV5128BLL-10KLI-TR Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
Our product features a surface mount mounting type, making it easy to install and suitable for a variety of applications. It has an operating temperature range of -40°C to 85°C TA, ensuring reliable performance in extreme environments. With a moisture sensitivity level of 3 (168 hours), our product is resistant to moisture and can withstand harsh conditions. The technology used is SRAM - Asynchronous, providing fast and efficient data storage. With a memory size of 4Mb 512K x 8, our product offers ample storage capacity. It has a nominal supply current of 40mA, making it energy efficient. The memory format is SRAM and the interface is parallel, allowing for seamless integration with other devices. The write cycle time for word and page is 10ns, ensuring quick data transfer. Our product is also ROHS3 compliant, meeting industry standards for environmental safety.
IS61WV5128BLL-10KLI-TR Features
Package / Case: 36-BSOJ (0.400, 10.16mm Width)
36 Pins
IS61WV5128BLL-10KLI-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61WV5128BLL-10KLI-TR Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
IS61WV5128BLL-10KLI-TR More Descriptions
Asynchronous Active Volatile ROHS3Compliant ic memory -40C~85C TA 2.4V~3.6V 4Mb 40mA
SRAM Chip Async Single 2.5V/3.3V 4M-Bit 512K x 8 10ns 32-Pin SOJ T/R
4Mb,high-Speed/Low Power,async,512K X 8,8Ns/3.3V,or 10Ns/2.4V-3.6V,36 Pin Soj (400Mil), Rohs |Integrated Silicon Solution (Issi) IS61WV5128BLL-10KLI-TR
SRAM 4M (512Kx8) 10ns Async SRAM 3.3v
2.4V~3.6V 4Mbit SOJ-36 SRAM ROHS
SRAM Chip Async Single 2.5V/3.3V 4M-Bit 512K x 8 10ns 32-Pin SOJ T/R
4Mb,high-Speed/Low Power,async,512K X 8,8Ns/3.3V,or 10Ns/2.4V-3.6V,36 Pin Soj (400Mil), Rohs |Integrated Silicon Solution (Issi) IS61WV5128BLL-10KLI-TR
SRAM 4M (512Kx8) 10ns Async SRAM 3.3v
2.4V~3.6V 4Mbit SOJ-36 SRAM ROHS
The three parts on the right have similar specifications to IS61WV5128BLL-10KLI-TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeNumber of PortsNominal Supply CurrentMemory TypeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageAddress Bus WidthDensitySync/AsyncWord SizeRadiation HardeningRoHS StatusSurface MountNumber of TerminationsECCN CodeAdditional FeatureHTS CodeTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Clock FrequencyOrganizationMemory WidthMemory DensityAccess Time (Max)LengthHeight Seated (Max)WidthSupplier Device PackageMax Operating TemperatureMin Operating TemperatureOperating Supply VoltageInterfaceMax Supply VoltageMin Supply VoltageAccess TimeReach Compliance CodeJESD-30 CodeView Compare
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IS61WV5128BLL-10KLI-TR8 WeeksSurface Mount36-BSOJ (0.400, 10.16mm Width)36-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)SRAM - Asynchronous2.4V~3.6V4Mb 512K x 8140mAVolatileSRAMParallel10ns19b4 MbAsynchronous8bNoROHS3 Compliant--------------------------------- -
12 WeeksSurface Mount165-LBGA1650°C~70°C TATrayActive3 (168 Hours)SRAM - Synchronous, DDR II1.71V~1.89V72Mb 4M x 18--VolatileSRAMParallel------ROHS3 CompliantYES1653A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41BOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIED1651.89V1.71V250MHz4MX181875497472 bit0.45 ns17mm1.4mm15mm----------
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8 WeeksSurface Mount44-BSOJ (0.400, 10.16mm Width)44-40°C~85°C TATape & Reel (TR)Active2 (1 Year)SRAM - Asynchronous4.5V~5.5V4Mb 256K x 16150mAVolatileSRAMParallel10ns18b4 MbAsynchronous16bNoROHS3 Compliant----------------------44-SOJ85°C-40°C5VParallel5.5V4.5V10ns--
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-Surface Mount165-LBGA--40°C~85°C TATrayLast Time Buy3 (168 Hours)SRAM - Synchronous, DDR II1.71V~1.89V72Mb 4M x 18--VolatileSRAMParallel-------YES1653A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41BOTTOM-11.8V1mm-1651.89V1.71V300MHz4MX181875497472 bit-17mm1.4mm15mm-------1.48nscompliantR-PBGA-B165
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ISSI, Integrated Silicon Solution Inc
5V V Surface Mount 32 Pin Memory IC 4 Mb kb 20.75mm mm 15mA mA 8b b
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