ISSI, Integrated Silicon Solution Inc IS61WV25616EDBLL-8BLI
- Part Number:
- IS61WV25616EDBLL-8BLI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3228735-IS61WV25616EDBLL-8BLI
- Description:
- IC SRAM 4MBIT 8NS 48TFBGA
- Datasheet:
- IS61WV25616EDBLL-8BLI
ISSI, Integrated Silicon Solution Inc IS61WV25616EDBLL-8BLI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61WV25616EDBLL-8BLI.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case48-TFBGA
- Surface MountYES
- Number of Pins48
- Operating Temperature-40°C~85°C TA
- PackagingTray
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- Terminal FinishMatte Tin (Sn)
- TechnologySRAM - Asynchronous
- Voltage - Supply3V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)225
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.75mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Qualification StatusNot Qualified
- Operating Supply Voltage3.3V
- Supply Voltage-Max (Vsup)3.63V
- Supply Voltage-Min (Vsup)2.97V
- Memory Size4Mb 256K x 16
- Number of Ports1
- Memory TypeVolatile
- Supply Current-Max0.045mA
- Memory FormatSRAM
- Memory InterfaceParallel
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page8ns
- Address Bus Width18b
- Density4 Mb
- Standby Current-Max0.006A
- Access Time (Max)8 ns
- I/O TypeCOMMON
- Standby Voltage-Min2V
- Length8mm
- RoHS StatusROHS3 Compliant
IS61WV25616EDBLL-8BLI Overview
The packaging for this particular product is a tray and the Pbfree code is marked as "yes". The Moisture Sensitivity Level (MSL) for this product is 3, which means it can withstand up to 168 hours of exposure to moisture. The technology used in this product is SRAM - Asynchronous, which allows for fast data transfer and processing. The voltage supply for this product ranges from 3V to 3.6V, providing a stable and reliable power source. The write cycle time for each word or page is 8ns, ensuring efficient and speedy operation. The address bus width is 18b, allowing for a large range of addresses to be accessed. The maximum access time for this product is 8ns, providing quick response times. The standby voltage is set at a minimum of 2V, ensuring low power consumption when not in use. Lastly, the length of this product is 8mm, making it compact and easy to handle.
IS61WV25616EDBLL-8BLI Features
Package / Case: 48-TFBGA
48 Pins
Operating Supply Voltage:3.3V
I/O Type: COMMON
IS61WV25616EDBLL-8BLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61WV25616EDBLL-8BLI Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
The packaging for this particular product is a tray and the Pbfree code is marked as "yes". The Moisture Sensitivity Level (MSL) for this product is 3, which means it can withstand up to 168 hours of exposure to moisture. The technology used in this product is SRAM - Asynchronous, which allows for fast data transfer and processing. The voltage supply for this product ranges from 3V to 3.6V, providing a stable and reliable power source. The write cycle time for each word or page is 8ns, ensuring efficient and speedy operation. The address bus width is 18b, allowing for a large range of addresses to be accessed. The maximum access time for this product is 8ns, providing quick response times. The standby voltage is set at a minimum of 2V, ensuring low power consumption when not in use. Lastly, the length of this product is 8mm, making it compact and easy to handle.
IS61WV25616EDBLL-8BLI Features
Package / Case: 48-TFBGA
48 Pins
Operating Supply Voltage:3.3V
I/O Type: COMMON
IS61WV25616EDBLL-8BLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61WV25616EDBLL-8BLI Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
IS61WV25616EDBLL-8BLI More Descriptions
SRAM Chip Async Single 3.3V 4M-bit 256K x 16 8ns 48-Pin TFBGA
Active 3-STATE BOTTOM Volatile ic memory -40C~85C TA 2.97V 4Mb 0.006A
Serial SRAM, 256Kx16, 2.4 to 3.6V, BGA-48, RoHSISSI SCT
3V~3.6V 4Mbit TFBGA-48(6x8) SRAM ROHS
IC SRAM 4MBIT PARALLEL 48TFBGA
SRAM 4Mb, 8ns,3.3V 256K x 16 Asyn SRAM
4Mb,high-Speed/Low Power,async With Ecc,256K X 16,8Ns,3.3V,48 Ball Mbga (6X8 Mm), Rohs |Integrated Silicon Solution (Issi) IS61WV25616EDBLL-8BLI
Active 3-STATE BOTTOM Volatile ic memory -40C~85C TA 2.97V 4Mb 0.006A
Serial SRAM, 256Kx16, 2.4 to 3.6V, BGA-48, RoHSISSI SCT
3V~3.6V 4Mbit TFBGA-48(6x8) SRAM ROHS
IC SRAM 4MBIT PARALLEL 48TFBGA
SRAM 4Mb, 8ns,3.3V 256K x 16 Asyn SRAM
4Mb,high-Speed/Low Power,async With Ecc,256K X 16,8Ns,3.3V,48 Ball Mbga (6X8 Mm), Rohs |Integrated Silicon Solution (Issi) IS61WV25616EDBLL-8BLI
The three parts on the right have similar specifications to IS61WV25616EDBLL-8BLI.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Qualification StatusOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeSupply Current-MaxMemory FormatMemory InterfaceOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityStandby Current-MaxAccess Time (Max)I/O TypeStandby Voltage-MinLengthRoHS StatusECCN CodeAdditional FeatureHTS CodePin CountClock FrequencyOrganizationMemory DensityHeight Seated (Max)WidthSupplier Device PackageMax Operating TemperatureMin Operating TemperatureInterfaceMax Supply VoltageMin Supply VoltageNominal Supply CurrentAccess TimeSync/AsyncWord SizeRadiation HardeningReach Compliance CodeJESD-30 CodeView Compare
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IS61WV25616EDBLL-8BLI8 WeeksSurface Mount48-TFBGAYES48-40°C~85°C TATraye3yesActive3 (168 Hours)48Matte Tin (Sn)SRAM - Asynchronous3V~3.6VBOTTOM22513.3V0.75mmNOT SPECIFIEDNot Qualified3.3V3.63V2.97V4Mb 256K x 161Volatile0.045mASRAMParallel3-STATE168ns18b4 Mb0.006A8 nsCOMMON2V8mmROHS3 Compliant-----------------------
-
12 WeeksSurface Mount165-LBGAYES1650°C~70°C TATray--Active3 (168 Hours)165-SRAM - Synchronous, DDR II1.71V~1.89VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIED--1.89V1.71V72Mb 4M x 18-Volatile-SRAMParallel-18----0.45 ns--17mmROHS3 Compliant3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41165250MHz4MX1875497472 bit1.4mm15mm-------------
-
8 WeeksSurface Mount44-BSOJ (0.400, 10.16mm Width)-44-40°C~85°C TATape & Reel (TR)--Active2 (1 Year)--SRAM - Asynchronous4.5V~5.5V-------5V--4Mb 256K x 161Volatile-SRAMParallel--10ns18b4 Mb-----ROHS3 Compliant---------44-SOJ85°C-40°CParallel5.5V4.5V50mA10nsAsynchronous16bNo--
-
-Surface Mount165-LBGAYES--40°C~85°C TATray--Last Time Buy3 (168 Hours)165-SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM-11.8V1mm---1.89V1.71V72Mb 4M x 18-Volatile-SRAMParallel-18-------17mm-3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41165300MHz4MX1875497472 bit1.4mm15mm-------1.48ns---compliantR-PBGA-B165
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