ISSI, Integrated Silicon Solution Inc IS61WV10248EDBLL-10TLI
- Part Number:
- IS61WV10248EDBLL-10TLI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3228722-IS61WV10248EDBLL-10TLI
- Description:
- IC SRAM 8MBIT 10NS 44TSOP
- Datasheet:
- IS61WV10248EDBLL-10TLI
ISSI, Integrated Silicon Solution Inc IS61WV10248EDBLL-10TLI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61WV10248EDBLL-10TLI.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case44-TSOP (0.400, 10.16mm Width)
- Surface MountYES
- Number of Pins44
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations44
- TechnologySRAM - Asynchronous
- Voltage - Supply2.4V~3.6V
- Terminal PositionDUAL
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.8mm
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)3.6V
- Power Supplies2.5/3.3V
- Supply Voltage-Min (Vsup)2.4V
- Memory Size8Mb 1M x 8
- Memory TypeVolatile
- Supply Current-Max0.05mA
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization1MX8
- Output Characteristics3-STATE
- Memory Width8
- Write Cycle Time - Word, Page10ns
- Standby Current-Max0.015A
- Memory Density8388608 bit
- Access Time (Max)10 ns
- I/O TypeCOMMON
- Standby Voltage-Min2V
- Height Seated (Max)1.2mm
- Length18.41mm
- Width10.16mm
- RoHS StatusROHS3 Compliant
IS61WV10248EDBLL-10TLI Overview
This product features a total of 44 terminations, making it suitable for a wide range of applications. Its technology is SRAM - Asynchronous, providing reliable and efficient performance. The maximum supply voltage (Vsup) is 3.6V, ensuring compatibility with various power sources. With a maximum supply current of 0.05mA, this product is energy-efficient and can help reduce overall power consumption. Its memory interface is parallel and the memory width is 8, allowing for seamless data transfer. The write cycle time for both word and page is a speedy 10ns, while the I/O type is COMMON for easy integration. With a maximum seated height of 1.2mm and a width of 10.16mm, this product offers a compact and space-saving solution for your needs.
IS61WV10248EDBLL-10TLI Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)
44 Pins
I/O Type: COMMON
IS61WV10248EDBLL-10TLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61WV10248EDBLL-10TLI Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
This product features a total of 44 terminations, making it suitable for a wide range of applications. Its technology is SRAM - Asynchronous, providing reliable and efficient performance. The maximum supply voltage (Vsup) is 3.6V, ensuring compatibility with various power sources. With a maximum supply current of 0.05mA, this product is energy-efficient and can help reduce overall power consumption. Its memory interface is parallel and the memory width is 8, allowing for seamless data transfer. The write cycle time for both word and page is a speedy 10ns, while the I/O type is COMMON for easy integration. With a maximum seated height of 1.2mm and a width of 10.16mm, this product offers a compact and space-saving solution for your needs.
IS61WV10248EDBLL-10TLI Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)
44 Pins
I/O Type: COMMON
IS61WV10248EDBLL-10TLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61WV10248EDBLL-10TLI Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
IS61WV10248EDBLL-10TLI More Descriptions
Surface Mount Tray 1MX8 SRAM - Asynchronous ic memory 10ns 10.16mm 0.015A 8388608bit
SRAM Chip Async Single 2.5V/3.3V 8M-bit 1M x 8 10ns 44-Pin TSOP-II
Serial SRAM, 1Mx8, 2.4 to 3.6V, TSOP2-44, RoHSISSI SCT
IC SRAM 8MBIT PARALLEL 44TSOP II
SRAM 8M, 2.4V-3.6V, 10ns LP Async SRAM
8Mb,high-Speed/Low Power,async With Ecc,1Mb X 8,10Ns,2.4V-3.6V,44 Pin Tsop Ii, Rohs |Integrated Silicon Solution (Issi) IS61WV10248EDBLL-10TLI
SRAM Chip Async Single 2.5V/3.3V 8M-bit 1M x 8 10ns 44-Pin TSOP-II
Serial SRAM, 1Mx8, 2.4 to 3.6V, TSOP2-44, RoHSISSI SCT
IC SRAM 8MBIT PARALLEL 44TSOP II
SRAM 8M, 2.4V-3.6V, 10ns LP Async SRAM
8Mb,high-Speed/Low Power,async With Ecc,1Mb X 8,10Ns,2.4V-3.6V,44 Pin Tsop Ii, Rohs |Integrated Silicon Solution (Issi) IS61WV10248EDBLL-10TLI
The three parts on the right have similar specifications to IS61WV10248EDBLL-10TLI.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeMemory TypeSupply Current-MaxMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityAccess Time (Max)I/O TypeStandby Voltage-MinHeight Seated (Max)LengthWidthRoHS StatusECCN CodeAdditional FeatureHTS CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountClock FrequencySupplier Device PackageMax Operating TemperatureMin Operating TemperatureOperating Supply VoltageInterfaceMax Supply VoltageMin Supply VoltageNumber of PortsNominal Supply CurrentAccess TimeAddress Bus WidthDensitySync/AsyncWord SizeRadiation HardeningReach Compliance CodeJESD-30 CodeView Compare
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IS61WV10248EDBLL-10TLI8 WeeksSurface Mount44-TSOP (0.400, 10.16mm Width)YES44-40°C~85°C TATrayActive3 (168 Hours)44SRAM - Asynchronous2.4V~3.6VDUAL13V0.8mmNot Qualified3.6V2.5/3.3V2.4V8Mb 1M x 8Volatile0.05mASRAMParallel1MX83-STATE810ns0.015A8388608 bit10 nsCOMMON2V1.2mm18.41mm10.16mmROHS3 Compliant-------------------------
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12 WeeksSurface Mount165-LBGAYES1650°C~70°C TATrayActive3 (168 Hours)165SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM11.8V1mm-1.89V-1.71V72Mb 4M x 18Volatile-SRAMParallel4MX18-18--75497472 bit0.45 ns--1.4mm17mm15mmROHS3 Compliant3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41NOT SPECIFIEDNOT SPECIFIED165300MHz-----------------
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8 WeeksSurface Mount44-BSOJ (0.400, 10.16mm Width)-44-40°C~85°C TATape & Reel (TR)Active2 (1 Year)-SRAM - Asynchronous4.5V~5.5V--------4Mb 256K x 16Volatile-SRAMParallel---10ns--------ROHS3 Compliant-------44-SOJ85°C-40°C5VParallel5.5V4.5V150mA10ns18b4 MbAsynchronous16bNo--
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-Surface Mount165-LBGAYES--40°C~85°C TATrayLast Time Buy3 (168 Hours)165SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM11.8V1mm-1.89V-1.71V72Mb 4M x 18Volatile-SRAMParallel4MX18-18--75497472 bit---1.4mm17mm15mm-3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41--165300MHz---------1.48ns-----compliantR-PBGA-B165
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