ISSI, Integrated Silicon Solution Inc IS61VPS102418A-250TQL
- Part Number:
- IS61VPS102418A-250TQL
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3252172-IS61VPS102418A-250TQL
- Description:
- IC SRAM 18MBIT 250MHZ 100TQFP
- Datasheet:
- IS61xPS25672A, 51236A, 102418A
Description
The ISSI IS61LPS/VPS51236A, IS61LPS/VPS102418A, and IS61LPS/VPS25672A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPS/VPS51236A is organized as 524,288 words by 36 bits, the IS61LPS/VPS102418A is organized as 1,048,576 words by 18 bits, and the IS61LPS/VPS25672A is organized as 262,144 words by 72 bits.
Features
Internal self-timed write cycle
Individual Byte Write Control and Global Write
Clock controlled, registered address, data, and control
Burst sequence control using MODE input
Three chip enable option for simple depth expansion and address pipelining
Common data inputs and data outputs
Auto Power-down during deselect
Single cycle deselect
Snooze MODE for reduced-power standby
JTAG Boundary Scan for PBGA package
Applications
Networking
Communications
Data storage
Industrial control
Automotive
The ISSI IS61LPS/VPS51236A, IS61LPS/VPS102418A, and IS61LPS/VPS25672A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPS/VPS51236A is organized as 524,288 words by 36 bits, the IS61LPS/VPS102418A is organized as 1,048,576 words by 18 bits, and the IS61LPS/VPS25672A is organized as 262,144 words by 72 bits.
Features
Internal self-timed write cycle
Individual Byte Write Control and Global Write
Clock controlled, registered address, data, and control
Burst sequence control using MODE input
Three chip enable option for simple depth expansion and address pipelining
Common data inputs and data outputs
Auto Power-down during deselect
Single cycle deselect
Snooze MODE for reduced-power standby
JTAG Boundary Scan for PBGA package
Applications
Networking
Communications
Data storage
Industrial control
Automotive
ISSI, Integrated Silicon Solution Inc IS61VPS102418A-250TQL technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61VPS102418A-250TQL.
- Mounting TypeSurface Mount
- Package / Case100-LQFP
- Surface MountYES
- Number of Pins100
- Operating Temperature0°C~70°C TA
- PackagingTray
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)2 (1 Year)
- Number of Terminations100
- Terminal FinishMATTE TIN
- TechnologySRAM - Synchronous, SDR
- Voltage - Supply2.375V~2.625V
- Terminal PositionQUAD
- Peak Reflow Temperature (Cel)225
- Number of Functions1
- Supply Voltage2.5V
- Terminal Pitch0.65mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Qualification StatusNot Qualified
- Operating Supply Voltage2.5V
- Memory Size18Mb 1M x 18
- Number of Ports2
- Nominal Supply Current450mA
- Memory TypeVolatile
- Clock Frequency250MHz
- Access Time2.6ns
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization1MX18
- Output Characteristics3-STATE
- Memory Width18
- Address Bus Width20b
- Density18 Mb
- Standby Current-Max0.11A
- I/O TypeCOMMON
- Sync/AsyncSynchronous
- Word Size18b
- Standby Voltage-Min3.14V
- Height Seated (Max)1.6mm
- RoHS StatusRoHS Compliant
The three parts on the right have similar specifications to IS61VPS102418A-250TQL.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Qualification StatusOperating Supply VoltageMemory SizeNumber of PortsNominal Supply CurrentMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthAddress Bus WidthDensityStandby Current-MaxI/O TypeSync/AsyncWord SizeStandby Voltage-MinHeight Seated (Max)RoHS StatusFactory Lead TimeECCN CodeAdditional FeatureHTS CodePin CountSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory DensityAccess Time (Max)LengthWidthSupplier Device PackageMax Operating TemperatureMin Operating TemperatureInterfaceMax Supply VoltageMin Supply VoltageWrite Cycle Time - Word, PageRadiation HardeningReach Compliance CodeJESD-30 CodeView Compare
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IS61VPS102418A-250TQLSurface Mount100-LQFPYES1000°C~70°C TATraye3yesObsolete2 (1 Year)100MATTE TINSRAM - Synchronous, SDR2.375V~2.625VQUAD22512.5V0.65mmNOT SPECIFIEDNot Qualified2.5V18Mb 1M x 182450mAVolatile250MHz2.6nsSRAMParallel1MX183-STATE1820b18 Mb0.11ACOMMONSynchronous18b3.14V1.6mmRoHS Compliant----------------------
-
Surface Mount165-LBGAYES1650°C~70°C TATray--Active3 (168 Hours)165-SRAM - Synchronous, DDR II1.71V~1.89VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIED--72Mb 4M x 18--Volatile250MHz-SRAMParallel4MX18-18-------1.4mmROHS3 Compliant12 Weeks3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.411651.89V1.71V75497472 bit0.45 ns17mm15mm----------
-
Surface Mount44-BSOJ (0.400, 10.16mm Width)-44-40°C~85°C TATape & Reel (TR)--Active2 (1 Year)--SRAM - Asynchronous4.5V~5.5V-------5V4Mb 256K x 16150mAVolatile-10nsSRAMParallel---18b4 Mb--Asynchronous16b--ROHS3 Compliant8 Weeks----------44-SOJ85°C-40°CParallel5.5V4.5V10nsNo--
-
Surface Mount165-LBGAYES--40°C~85°C TATray--Last Time Buy3 (168 Hours)165-SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM-11.8V1mm---72Mb 4M x 18--Volatile300MHz1.48nsSRAMParallel4MX18-18-------1.4mm--3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.411651.89V1.71V75497472 bit-17mm15mm--------compliantR-PBGA-B165
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