ISSI, Integrated Silicon Solution Inc IS61QDPB42M36A2-500M3L
- Part Number:
- IS61QDPB42M36A2-500M3L
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3237875-IS61QDPB42M36A2-500M3L
- Description:
- IC SRAM 72MBIT 500MHZ 165BGA
- Datasheet:
- IS61QDPB42M36A2-500M3L
ISSI, Integrated Silicon Solution Inc IS61QDPB42M36A2-500M3L technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61QDPB42M36A2-500M3L.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / Case165-LBGA
- Surface MountYES
- Number of Pins165
- Operating Temperature0°C~70°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations165
- TechnologySRAM - Synchronous, QUADP
- Voltage - Supply1.71V~1.89V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1mm
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)1.89V
- Power Supplies1.8V
- Supply Voltage-Min (Vsup)1.71V
- Memory Size72Mb 2M x 36
- Memory TypeVolatile
- Clock Frequency500MHz
- Supply Current-Max1.2mA
- Access Time8.4ns
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization2MX36
- Output Characteristics3-STATE
- Memory Width36
- Standby Current-Max0.36A
- Memory Density75497472 bit
- I/O TypeSEPARATE
- Standby Voltage-Min1.71V
- Height Seated (Max)1.4mm
- Length17mm
- Width15mm
- RoHS StatusROHS3 Compliant
IS61QDPB42M36A2-500M3L Overview
The number of terminations for this technology is 165, making it suitable for larger and more complex projects. The specific technology being used is SRAM - Synchronous, QUADP, which allows for fast and efficient data transfer. The voltage supply for this technology ranges from 1.71V to 1.89V, providing a stable and reliable power source. The minimum supply voltage required is 1.71V, ensuring that the technology can operate at its full potential. With a clock frequency of 500MHz, this technology is capable of handling high-speed data processing. The maximum supply current is 1.2mA, allowing for efficient power usage. The organization of this technology is 2MX36, providing a large memory capacity. The maximum standby current is 0.36A, ensuring minimal power consumption when the technology is not in use. The I/O type is SEPARATE, allowing for separate input and output signals. This technology has a maximum height of 1.4mm when seated, making it compact and suitable for various applications. Overall, this technology offers a powerful and efficient solution for complex projects.
IS61QDPB42M36A2-500M3L Features
Package / Case: 165-LBGA
165 Pins
I/O Type: SEPARATE
IS61QDPB42M36A2-500M3L Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61QDPB42M36A2-500M3L Memory applications.
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
The number of terminations for this technology is 165, making it suitable for larger and more complex projects. The specific technology being used is SRAM - Synchronous, QUADP, which allows for fast and efficient data transfer. The voltage supply for this technology ranges from 1.71V to 1.89V, providing a stable and reliable power source. The minimum supply voltage required is 1.71V, ensuring that the technology can operate at its full potential. With a clock frequency of 500MHz, this technology is capable of handling high-speed data processing. The maximum supply current is 1.2mA, allowing for efficient power usage. The organization of this technology is 2MX36, providing a large memory capacity. The maximum standby current is 0.36A, ensuring minimal power consumption when the technology is not in use. The I/O type is SEPARATE, allowing for separate input and output signals. This technology has a maximum height of 1.4mm when seated, making it compact and suitable for various applications. Overall, this technology offers a powerful and efficient solution for complex projects.
IS61QDPB42M36A2-500M3L Features
Package / Case: 165-LBGA
165 Pins
I/O Type: SEPARATE
IS61QDPB42M36A2-500M3L Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61QDPB42M36A2-500M3L Memory applications.
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
IS61QDPB42M36A2-500M3L More Descriptions
SRAM Chip Sync Single 1.8V 72M-Bit 2M x 36 165-Pin FBGA
1.71V~1.89V 72Mbit FBGA-165(15x17) SRAM ROHS
IC SRAM 72MBIT PARALLEL 165LFBGA
SRAM 72M, 2Mx36 500Mhz QUADP Sync SRAM
72Mb, Quad (Burst Of 4), Sync Sram, 2M X 36, 2.5 Read Latency, 165 Ball Fbga (15X17 Mm),rohs |Integrated Silicon Solution (Issi) IS61QDPB42M36A2-500M3L
1.71V~1.89V 72Mbit FBGA-165(15x17) SRAM ROHS
IC SRAM 72MBIT PARALLEL 165LFBGA
SRAM 72M, 2Mx36 500Mhz QUADP Sync SRAM
72Mb, Quad (Burst Of 4), Sync Sram, 2M X 36, 2.5 Read Latency, 165 Ball Fbga (15X17 Mm),rohs |Integrated Silicon Solution (Issi) IS61QDPB42M36A2-500M3L
The three parts on the right have similar specifications to IS61QDPB42M36A2-500M3L.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeMemory TypeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthStandby Current-MaxMemory DensityI/O TypeStandby Voltage-MinHeight Seated (Max)LengthWidthRoHS StatusECCN CodeAdditional FeatureHTS CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountAccess Time (Max)Reach Compliance CodeJESD-30 CodeView Compare
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IS61QDPB42M36A2-500M3L12 WeeksSurface Mount165-LBGAYES1650°C~70°C TATrayActive3 (168 Hours)165SRAM - Synchronous, QUADP1.71V~1.89VBOTTOM11.8V1mmNot Qualified1.89V1.8V1.71V72Mb 2M x 36Volatile500MHz1.2mA8.4nsSRAMParallel2MX363-STATE360.36A75497472 bitSEPARATE1.71V1.4mm17mm15mmROHS3 Compliant----------
-
12 WeeksSurface Mount165-LBGAYES1650°C~70°C TATrayActive3 (168 Hours)165SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM11.8V1mm-1.89V-1.71V72Mb 4M x 18Volatile250MHz--SRAMParallel4MX18-18-75497472 bit--1.4mm17mm15mmROHS3 Compliant3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41NOT SPECIFIEDNOT SPECIFIED1650.45 ns--
-
12 WeeksSurface Mount165-LBGAYES1650°C~70°C TATrayActive3 (168 Hours)165SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM11.8V1mm-1.89V-1.71V72Mb 4M x 18Volatile300MHz--SRAMParallel4MX18-18-75497472 bit--1.4mm17mm15mmROHS3 Compliant3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41NOT SPECIFIEDNOT SPECIFIED1650.45 ns--
-
-Surface Mount165-LBGAYES--40°C~85°C TATrayLast Time Buy3 (168 Hours)165SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM11.8V1mm-1.89V-1.71V72Mb 4M x 18Volatile300MHz-1.48nsSRAMParallel4MX18-18-75497472 bit--1.4mm17mm15mm-3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41--165-compliantR-PBGA-B165
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