IS61QDP2B41M18A-400M3L

ISSI, Integrated Silicon Solution Inc IS61QDP2B41M18A-400M3L

Part Number:
IS61QDP2B41M18A-400M3L
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Ventron No:
3236889-IS61QDP2B41M18A-400M3L
Description:
IC SRAM 18MBIT 400MHZ 165BGA
ECAD Model:
Datasheet:
IS61QDP2B41M18A-400M3L

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Specifications
ISSI, Integrated Silicon Solution Inc IS61QDP2B41M18A-400M3L technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61QDP2B41M18A-400M3L.
  • Factory Lead Time
    12 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    165-LBGA
  • Surface Mount
    YES
  • Number of Pins
    165
  • Operating Temperature
    0°C~70°C TA
  • Packaging
    Tray
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    165
  • Technology
    SRAM - Synchronous, QUADP
  • Voltage - Supply
    1.71V~1.89V
  • Terminal Position
    BOTTOM
  • Number of Functions
    1
  • Supply Voltage
    1.8V
  • Terminal Pitch
    1mm
  • Qualification Status
    Not Qualified
  • Supply Voltage-Max (Vsup)
    1.89V
  • Power Supplies
    1.5/1.81.8V
  • Supply Voltage-Min (Vsup)
    1.71V
  • Memory Size
    18Mb 1M x 18
  • Memory Type
    Volatile
  • Clock Frequency
    400MHz
  • Supply Current-Max
    1.15mA
  • Access Time
    8.4ns
  • Memory Format
    SRAM
  • Memory Interface
    Parallel
  • Organization
    1MX18
  • Output Characteristics
    3-STATE
  • Memory Width
    18
  • Standby Current-Max
    0.36A
  • Memory Density
    18874368 bit
  • I/O Type
    SEPARATE
  • Standby Voltage-Min
    1.7V
  • Height Seated (Max)
    1.4mm
  • Length
    17mm
  • Width
    15mm
  • RoHS Status
    ROHS3 Compliant
Description
IS61QDP2B41M18A-400M3L Overview
The product is designed for surface mount installation and has 165 pins. It has a moisture sensitivity level of 3, meaning it can withstand 168 hours of exposure to moisture. The terminal position is located at the bottom of the product. It has 1 function and a maximum supply voltage of 1.89V. The power supplies required for this product are 1.5/1.81.8V. It has a memory density of 18874368 bits and an I/O type of SEPARATE. The maximum seated height is 1.4mm.

IS61QDP2B41M18A-400M3L Features
Package / Case: 165-LBGA
165 Pins
I/O Type: SEPARATE


IS61QDP2B41M18A-400M3L Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61QDP2B41M18A-400M3L Memory applications.


telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
IS61QDP2B41M18A-400M3L More Descriptions
SRAM - Synchronous, QUADP Memory IC 18Mb (1M x 18) Parallel 400 MHz 8.4 ns 165-LFBGA (15x17)
18Mb, Quadp (Burst Of 4), Sync Sram, 1M X 18, 2.0 Read Latency, 165 Ball Fbga (15X17 Mm), Rohs |Integrated Silicon Solution (Issi) IS61QDP2B41M18A-400M3L
SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA
1.71V~1.89V 18Mbit FBGA-165(15x17) SRAM ROHS
IC SRAM 18MBIT PARALLEL 165LFBGA
SRAM 18Mb 1Mx18 400Mhz QUADP Sync SRAM
Product Comparison
The three parts on the right have similar specifications to IS61QDP2B41M18A-400M3L.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Technology
    Voltage - Supply
    Terminal Position
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Qualification Status
    Supply Voltage-Max (Vsup)
    Power Supplies
    Supply Voltage-Min (Vsup)
    Memory Size
    Memory Type
    Clock Frequency
    Supply Current-Max
    Access Time
    Memory Format
    Memory Interface
    Organization
    Output Characteristics
    Memory Width
    Standby Current-Max
    Memory Density
    I/O Type
    Standby Voltage-Min
    Height Seated (Max)
    Length
    Width
    RoHS Status
    ECCN Code
    Additional Feature
    HTS Code
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Access Time (Max)
    Reach Compliance Code
    JESD-30 Code
    View Compare
  • IS61QDP2B41M18A-400M3L
    IS61QDP2B41M18A-400M3L
    12 Weeks
    Surface Mount
    165-LBGA
    YES
    165
    0°C~70°C TA
    Tray
    Active
    3 (168 Hours)
    165
    SRAM - Synchronous, QUADP
    1.71V~1.89V
    BOTTOM
    1
    1.8V
    1mm
    Not Qualified
    1.89V
    1.5/1.81.8V
    1.71V
    18Mb 1M x 18
    Volatile
    400MHz
    1.15mA
    8.4ns
    SRAM
    Parallel
    1MX18
    3-STATE
    18
    0.36A
    18874368 bit
    SEPARATE
    1.7V
    1.4mm
    17mm
    15mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IS61DDB24M18A-250M3L
    12 Weeks
    Surface Mount
    165-LBGA
    YES
    165
    0°C~70°C TA
    Tray
    Active
    3 (168 Hours)
    165
    SRAM - Synchronous, DDR II
    1.71V~1.89V
    BOTTOM
    1
    1.8V
    1mm
    -
    1.89V
    -
    1.71V
    72Mb 4M x 18
    Volatile
    250MHz
    -
    -
    SRAM
    Parallel
    4MX18
    -
    18
    -
    75497472 bit
    -
    -
    1.4mm
    17mm
    15mm
    ROHS3 Compliant
    3A991.B.2.A
    PIPELINED ARCHITECTURE
    8542.32.00.41
    NOT SPECIFIED
    NOT SPECIFIED
    165
    0.45 ns
    -
    -
  • IS61DDB24M18A-300M3L
    12 Weeks
    Surface Mount
    165-LBGA
    YES
    165
    0°C~70°C TA
    Tray
    Active
    3 (168 Hours)
    165
    SRAM - Synchronous, DDR II
    1.71V~1.89V
    BOTTOM
    1
    1.8V
    1mm
    -
    1.89V
    -
    1.71V
    72Mb 4M x 18
    Volatile
    300MHz
    -
    -
    SRAM
    Parallel
    4MX18
    -
    18
    -
    75497472 bit
    -
    -
    1.4mm
    17mm
    15mm
    ROHS3 Compliant
    3A991.B.2.A
    PIPELINED ARCHITECTURE
    8542.32.00.41
    NOT SPECIFIED
    NOT SPECIFIED
    165
    0.45 ns
    -
    -
  • IS61DDB44M18A-300M3I
    -
    Surface Mount
    165-LBGA
    YES
    -
    -40°C~85°C TA
    Tray
    Last Time Buy
    3 (168 Hours)
    165
    SRAM - Synchronous, DDR II
    1.71V~1.89V
    BOTTOM
    1
    1.8V
    1mm
    -
    1.89V
    -
    1.71V
    72Mb 4M x 18
    Volatile
    300MHz
    -
    1.48ns
    SRAM
    Parallel
    4MX18
    -
    18
    -
    75497472 bit
    -
    -
    1.4mm
    17mm
    15mm
    -
    3A991.B.2.A
    PIPELINED ARCHITECTURE
    8542.32.00.41
    -
    -
    165
    -
    compliant
    R-PBGA-B165
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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