ISSI, Integrated Silicon Solution Inc IS61QDB41M36C-250M3L
- Part Number:
- IS61QDB41M36C-250M3L
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3245333-IS61QDB41M36C-250M3L
- Description:
- IC SRAM 36MBIT 250MHZ 165FBGA
- Datasheet:
- IS61QDB41M36C-250M3L
ISSI, Integrated Silicon Solution Inc IS61QDB41M36C-250M3L technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61QDB41M36C-250M3L.
- Mounting TypeSurface Mount
- Package / Case165-LBGA
- Surface MountYES
- Operating Temperature0°C~70°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations165
- ECCN Code3A991.B.2.A
- HTS Code8542.32.00.41
- TechnologySRAM - Synchronous, QUAD
- Voltage - Supply1.71V~1.89V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1mm
- JESD-30 CodeR-PBGA-B165
- Supply Voltage-Max (Vsup)1.89V
- Supply Voltage-Min (Vsup)1.71V
- Memory Size36Mb 1M x 36
- Memory TypeVolatile
- Clock Frequency250MHz
- Access Time8.4ns
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization1MX36
- Memory Width36
- Memory Density37748736 bit
- Height Seated (Max)1.4mm
- Length17mm
- Width15mm
- RoHS StatusROHS3 Compliant
IS61QDB41M36C-250M3L Overview
The packaging for this particular technology is a tray, which is a common method used to transport and store electronic components. The Moisture Sensitivity Level (MSL) for this technology is 3, which means that it can be exposed to ambient air for up to 168 hours without any negative effects. The HTS Code for this technology is 8542.32.00.41, which is used for the import and export of electronic components. This technology is a type of SRAM - Synchronous, QUAD, which refers to its specific design and functionality. The voltage supply for this technology is 1.71V~1.89V, providing the necessary power for its operation. The terminal position for this technology is located at the bottom, with a terminal pitch of 1mm. It has a memory size of 36Mb 1M x 36, meaning it can store 36 million bits of data in a 1M x 36 configuration. The memory format for this technology is SRAM, indicating its use of static random access memory. Lastly, the memory width for this technology is 36, which refers to the number of bits that can be accessed simultaneously.
IS61QDB41M36C-250M3L Features
Package / Case: 165-LBGA
IS61QDB41M36C-250M3L Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61QDB41M36C-250M3L Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
The packaging for this particular technology is a tray, which is a common method used to transport and store electronic components. The Moisture Sensitivity Level (MSL) for this technology is 3, which means that it can be exposed to ambient air for up to 168 hours without any negative effects. The HTS Code for this technology is 8542.32.00.41, which is used for the import and export of electronic components. This technology is a type of SRAM - Synchronous, QUAD, which refers to its specific design and functionality. The voltage supply for this technology is 1.71V~1.89V, providing the necessary power for its operation. The terminal position for this technology is located at the bottom, with a terminal pitch of 1mm. It has a memory size of 36Mb 1M x 36, meaning it can store 36 million bits of data in a 1M x 36 configuration. The memory format for this technology is SRAM, indicating its use of static random access memory. Lastly, the memory width for this technology is 36, which refers to the number of bits that can be accessed simultaneously.
IS61QDB41M36C-250M3L Features
Package / Case: 165-LBGA
IS61QDB41M36C-250M3L Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61QDB41M36C-250M3L Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
IS61QDB41M36C-250M3L More Descriptions
1Mx36, 250Mhz, SRAM, FBGA-165ISSI SCT
IC SRAM 36MBIT PARALLEL 165LFBGA
IC SRAM 36MBIT PARALLEL 165LFBGA
The three parts on the right have similar specifications to IS61QDB41M36C-250M3L.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthRoHS StatusFactory Lead TimeNumber of PinsAdditional FeaturePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountAccess Time (Max)Supplier Device PackageMax Operating TemperatureMin Operating TemperatureOperating Supply VoltageInterfaceMax Supply VoltageMin Supply VoltageNumber of PortsNominal Supply CurrentWrite Cycle Time - Word, PageAddress Bus WidthDensitySync/AsyncWord SizeRadiation HardeningReach Compliance CodeView Compare
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IS61QDB41M36C-250M3LSurface Mount165-LBGAYES0°C~70°C TATrayActive3 (168 Hours)1653A991.B.2.A8542.32.00.41SRAM - Synchronous, QUAD1.71V~1.89VBOTTOM11.8V1mmR-PBGA-B1651.89V1.71V36Mb 1M x 36Volatile250MHz8.4nsSRAMParallel1MX363637748736 bit1.4mm17mm15mmROHS3 Compliant------------------------
-
Surface Mount165-LBGAYES0°C~70°C TATrayActive3 (168 Hours)1653A991.B.2.A8542.32.00.41SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM11.8V1mm-1.89V1.71V72Mb 4M x 18Volatile300MHz-SRAMParallel4MX181875497472 bit1.4mm17mm15mmROHS3 Compliant12 Weeks165PIPELINED ARCHITECTURENOT SPECIFIEDNOT SPECIFIED1650.45 ns----------------
-
Surface Mount44-BSOJ (0.400, 10.16mm Width)--40°C~85°C TATape & Reel (TR)Active2 (1 Year)---SRAM - Asynchronous4.5V~5.5V-------4Mb 256K x 16Volatile-10nsSRAMParallel------ROHS3 Compliant8 Weeks44-----44-SOJ85°C-40°C5VParallel5.5V4.5V150mA10ns18b4 MbAsynchronous16bNo-
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Surface Mount165-LBGAYES-40°C~85°C TATrayLast Time Buy3 (168 Hours)1653A991.B.2.A8542.32.00.41SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM11.8V1mmR-PBGA-B1651.89V1.71V72Mb 4M x 18Volatile300MHz1.48nsSRAMParallel4MX181875497472 bit1.4mm17mm15mm---PIPELINED ARCHITECTURE--165----------------compliant
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