ISSI, Integrated Silicon Solution Inc IS61NLP25636A-200B2I-TR
- Part Number:
- IS61NLP25636A-200B2I-TR
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3235890-IS61NLP25636A-200B2I-TR
- Description:
- IC SRAM 9MBIT 200MHZ 119BGA
- Datasheet:
- IS61N(LP,VP)yyyyyA
ISSI, Integrated Silicon Solution Inc IS61NLP25636A-200B2I-TR technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61NLP25636A-200B2I-TR.
- Mounting TypeSurface Mount
- Package / Case119-BBGA
- Surface MountYES
- Number of Pins119
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations119
- TechnologySRAM - Synchronous, SDR
- Voltage - Supply3.135V~3.465V
- Terminal PositionBOTTOM
- Terminal Pitch1.27mm
- Qualification StatusNot Qualified
- Power Supplies2.5/3.33.3V
- Memory Size9Mb 256K x 36
- Memory TypeVolatile
- Clock Frequency200MHz
- Supply Current-Max0.28mA
- Access Time3.1ns
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization256KX36
- Output Characteristics3-STATE
- Memory Width36
- Standby Current-Max0.05A
- Memory Density9437184 bit
- I/O TypeCOMMON
- Standby Voltage-Min3.14V
- RoHS StatusNon-RoHS Compliant
IS61NLP25636A-200B2I-TR Overview
The part status of this particular technology is currently active, indicating that it is currently in production and available for purchase. The technology itself is SRAM - Synchronous, SDR, which refers to the type of memory and its synchronous dynamic random access capabilities. The terminal position is located at the bottom of the part, while the terminal pitch measures 1.27mm. However, this specific part has not yet been qualified, meaning it has not gone through the necessary testing and verification processes. The supply current-max for this part is 0.28mA, while the access time is 3.1ns. The output characteristics are 3-STATE, indicating that the output can be in three different states. The standby current-max is 0.05A, and the I/O type is common, meaning it can be used for both input and output functions.
IS61NLP25636A-200B2I-TR Features
Package / Case: 119-BBGA
119 Pins
I/O Type: COMMON
IS61NLP25636A-200B2I-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61NLP25636A-200B2I-TR Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
The part status of this particular technology is currently active, indicating that it is currently in production and available for purchase. The technology itself is SRAM - Synchronous, SDR, which refers to the type of memory and its synchronous dynamic random access capabilities. The terminal position is located at the bottom of the part, while the terminal pitch measures 1.27mm. However, this specific part has not yet been qualified, meaning it has not gone through the necessary testing and verification processes. The supply current-max for this part is 0.28mA, while the access time is 3.1ns. The output characteristics are 3-STATE, indicating that the output can be in three different states. The standby current-max is 0.05A, and the I/O type is common, meaning it can be used for both input and output functions.
IS61NLP25636A-200B2I-TR Features
Package / Case: 119-BBGA
119 Pins
I/O Type: COMMON
IS61NLP25636A-200B2I-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61NLP25636A-200B2I-TR Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
IS61NLP25636A-200B2I-TR More Descriptions
SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 3.1ns 119-Pin P-BGA T/R
IC SRAM 9MBIT PARALLEL 119PBGA
SRAM 8M (256Kx36) 200MHz Sync SRAM 3.3v
IC SRAM 9MBIT PARALLEL 119PBGA
SRAM 8M (256Kx36) 200MHz Sync SRAM 3.3v
The three parts on the right have similar specifications to IS61NLP25636A-200B2I-TR.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionTerminal PitchQualification StatusPower SuppliesMemory SizeMemory TypeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthStandby Current-MaxMemory DensityI/O TypeStandby Voltage-MinRoHS StatusFactory Lead TimeECCN CodeAdditional FeatureHTS CodePeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTime@Peak Reflow Temperature-Max (s)Pin CountSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Access Time (Max)LengthHeight Seated (Max)WidthReach Compliance CodeJESD-30 CodeView Compare
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IS61NLP25636A-200B2I-TRSurface Mount119-BBGAYES119-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)119SRAM - Synchronous, SDR3.135V~3.465VBOTTOM1.27mmNot Qualified2.5/3.33.3V9Mb 256K x 36Volatile200MHz0.28mA3.1nsSRAMParallel256KX363-STATE360.05A9437184 bitCOMMON3.14VNon-RoHS Compliant------------------
-
Surface Mount165-LBGAYES1650°C~70°C TATrayActive3 (168 Hours)165SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM1mm--72Mb 4M x 18Volatile250MHz--SRAMParallel4MX18-18-75497472 bit--ROHS3 Compliant12 Weeks3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41NOT SPECIFIED11.8VNOT SPECIFIED1651.89V1.71V0.45 ns17mm1.4mm15mm--
-
Surface Mount165-LBGAYES1650°C~70°C TATrayActive3 (168 Hours)165SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM1mm--72Mb 4M x 18Volatile300MHz--SRAMParallel4MX18-18-75497472 bit--ROHS3 Compliant12 Weeks3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41NOT SPECIFIED11.8VNOT SPECIFIED1651.89V1.71V0.45 ns17mm1.4mm15mm--
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Surface Mount165-LBGAYES--40°C~85°C TATrayLast Time Buy3 (168 Hours)165SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM1mm--72Mb 4M x 18Volatile300MHz-1.48nsSRAMParallel4MX18-18-75497472 bit----3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41-11.8V-1651.89V1.71V-17mm1.4mm15mmcompliantR-PBGA-B165
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