ISSI, Integrated Silicon Solution Inc IS61NLF51236B-7.5TQLI
- Part Number:
- IS61NLF51236B-7.5TQLI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3236221-IS61NLF51236B-7.5TQLI
- Description:
- IC SRAM 18MBIT 7.5NS 100TQFP
- ECAD Model:
-
- Datasheet:
- IS61NLF51236B-7.5TQLI
ISSI, Integrated Silicon Solution Inc IS61NLF51236B-7.5TQLI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61NLF51236B-7.5TQLI.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / Case100-LQFP
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations100
- Additional FeatureFLOW THROUGH
- TechnologySRAM - Synchronous, SDR
- Voltage - Supply3.135V~3.465V
- Terminal PositionQUAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.65mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PQFP-G100
- Supply Voltage-Max (Vsup)3.465V
- Supply Voltage-Min (Vsup)3.135V
- Memory Size18Mb 512K x 36
- Memory TypeVolatile
- Clock Frequency117MHz
- Access Time7.5ns
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization512KX36
- Memory Width36
- Memory Density18874368 bit
- Height Seated (Max)1.6mm
- Length20mm
- Width14mm
- RoHS StatusROHS3 Compliant
IS61NLF51236B-7.5TQLI Overview
The 100-LQFP package/case is designed for surface mount applications and features a flow through design. This product has 1 function and operates at a supply voltage of 3.3V. The terminal pitch is 0.65mm and the time at peak reflow temperature is not specified. It has a parallel memory interface and a memory density of 18874368 bits. The width of the product is 14mm.
IS61NLF51236B-7.5TQLI Features
Package / Case: 100-LQFP
Additional Feature:FLOW THROUGH
IS61NLF51236B-7.5TQLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61NLF51236B-7.5TQLI Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
The 100-LQFP package/case is designed for surface mount applications and features a flow through design. This product has 1 function and operates at a supply voltage of 3.3V. The terminal pitch is 0.65mm and the time at peak reflow temperature is not specified. It has a parallel memory interface and a memory density of 18874368 bits. The width of the product is 14mm.
IS61NLF51236B-7.5TQLI Features
Package / Case: 100-LQFP
Additional Feature:FLOW THROUGH
IS61NLF51236B-7.5TQLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61NLF51236B-7.5TQLI Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
IS61NLF51236B-7.5TQLI More Descriptions
SRAM Chip Sync Single 3.3V 18Mbit 512K X 36 7.5ns 100-Pin LQFP Tray
512K x36 and 1024K x18 18Mb, FLOW THROUGH STATE BUS SYNCHRONOUS SRAM
Synchronous SRAM, 512Kx36, 3.3V, QFP-100, RoHSISSI SCT
CoC and 2-years warranty / RFQ for pricing
IC SRAM 18MBIT PARALLEL 100LQFP
SRAM 18Mb, 7.5ns 512K x 36 Sync SRAM
18Mb,"no-Wait"/Flowthrough,sync,512K X 36,7.5Ns,3.3V/2.5V - I/O,100 Pin Tqfp, Rohs |Integrated Silicon Solution (Issi) IS61NLF51236B-7.5TQLI
512K x36 and 1024K x18 18Mb, FLOW THROUGH STATE BUS SYNCHRONOUS SRAM
Synchronous SRAM, 512Kx36, 3.3V, QFP-100, RoHSISSI SCT
CoC and 2-years warranty / RFQ for pricing
IC SRAM 18MBIT PARALLEL 100LQFP
SRAM 18Mb, 7.5ns 512K x 36 Sync SRAM
18Mb,"no-Wait"/Flowthrough,sync,512K X 36,7.5Ns,3.3V/2.5V - I/O,100 Pin Tqfp, Rohs |Integrated Silicon Solution (Issi) IS61NLF51236B-7.5TQLI
The three parts on the right have similar specifications to IS61NLF51236B-7.5TQLI.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthRoHS StatusNumber of PinsECCN CodeHTS CodePin CountAccess Time (Max)Supplier Device PackageMax Operating TemperatureMin Operating TemperatureOperating Supply VoltageInterfaceMax Supply VoltageMin Supply VoltageNumber of PortsNominal Supply CurrentWrite Cycle Time - Word, PageAddress Bus WidthDensitySync/AsyncWord SizeRadiation HardeningReach Compliance CodeView Compare
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IS61NLF51236B-7.5TQLI12 WeeksSurface Mount100-LQFPYES-40°C~85°C TATrayActive3 (168 Hours)100FLOW THROUGHSRAM - Synchronous, SDR3.135V~3.465VQUADNOT SPECIFIED13.3V0.65mmNOT SPECIFIEDR-PQFP-G1003.465V3.135V18Mb 512K x 36Volatile117MHz7.5nsSRAMParallel512KX363618874368 bit1.6mm20mm14mmROHS3 Compliant---------------------- -
12 WeeksSurface Mount165-LBGAYES0°C~70°C TATrayActive3 (168 Hours)165PIPELINED ARCHITECTURESRAM - Synchronous, DDR II1.71V~1.89VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIED-1.89V1.71V72Mb 4M x 18Volatile300MHz-SRAMParallel4MX181875497472 bit1.4mm17mm15mmROHS3 Compliant1653A991.B.2.A8542.32.00.411650.45 ns----------------
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8 WeeksSurface Mount44-BSOJ (0.400, 10.16mm Width)--40°C~85°C TATape & Reel (TR)Active2 (1 Year)--SRAM - Asynchronous4.5V~5.5V---------4Mb 256K x 16Volatile-10nsSRAMParallel------ROHS3 Compliant44----44-SOJ85°C-40°C5VParallel5.5V4.5V150mA10ns18b4 MbAsynchronous16bNo-
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-Surface Mount165-LBGAYES-40°C~85°C TATrayLast Time Buy3 (168 Hours)165PIPELINED ARCHITECTURESRAM - Synchronous, DDR II1.71V~1.89VBOTTOM-11.8V1mm-R-PBGA-B1651.89V1.71V72Mb 4M x 18Volatile300MHz1.48nsSRAMParallel4MX181875497472 bit1.4mm17mm15mm--3A991.B.2.A8542.32.00.41165----------------compliant
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ISSI, Integrated Silicon Solution Inc
5V V Surface Mount 32 Pin Memory IC 4 Mb kb 20.75mm mm 15mA mA 8b b
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