ISSI, Integrated Silicon Solution Inc IS61LV6416-10TL
- Part Number:
- IS61LV6416-10TL
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3229337-IS61LV6416-10TL
- Description:
- IC SRAM 1MBIT 10NS 44TSOP
- Datasheet:
- IS61LV6416(L)
ISSI, Integrated Silicon Solution Inc IS61LV6416-10TL technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61LV6416-10TL.
- Factory Lead Time6 Weeks
- Mounting TypeSurface Mount
- Package / Case44-TSOP (0.400, 10.16mm Width)
- Surface MountYES
- Number of Pins44
- Operating Temperature0°C~70°C TA
- PackagingTray
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations44
- ECCN Code3A991.B.2.B
- Terminal FinishMatte Tin (Sn) - annealed
- HTS Code8542.32.00.41
- TechnologySRAM - Asynchronous
- Voltage - Supply3.135V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.8mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count44
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)3.63V
- Power Supplies3.3V
- Supply Voltage-Min (Vsup)3.135V
- Memory Size1Mb 64K x 16
- Memory TypeVolatile
- Supply Current-Max0.12mA
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization64KX16
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page10ns
- Standby Current-Max0.005A
- Memory Density1048576 bit
- Access Time (Max)10 ns
- I/O TypeCOMMON
- Standby Voltage-Min3.14V
- Height Seated (Max)1.2mm
- Length18.415mm
- Width10.16mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IS61LV6416-10TL Overview
The mounting type for this particular electronic component is surface mount, meaning it can be directly attached to a circuit board without the need for any additional hardware. This part is currently active and available for purchase. Its HTS code is 8542.32.00.41, which is used for classifying electronic integrated circuits. The technology used in this component is SRAM - asynchronous, which allows for fast and efficient data storage and retrieval. The terminal pitch, or distance between each terminal, is 0.8mm, making it suitable for smaller circuit boards. This component operates on a 3.3V power supply and is classified as volatile memory, meaning its data is only retained when power is supplied. Its output characteristics are 3-STATE, meaning it can be in an active, standby, or high impedance state. The minimum standby voltage for this component is 3.14V, ensuring stable operation. With a length of 18.415mm, this component can easily fit into compact electronic devices.
IS61LV6416-10TL Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)
44 Pins
I/O Type: COMMON
IS61LV6416-10TL Applications
There are a lot of ISSI, Integrated Silicon Solution Inc IS61LV6416-10TL Memory applications.
personal digital assistants
supercomputers
hard disk drive (HDD)
data buffer
nonvolatile BIOS memory
Cache memory
DVD disk buffer
printers
servers
networks
The mounting type for this particular electronic component is surface mount, meaning it can be directly attached to a circuit board without the need for any additional hardware. This part is currently active and available for purchase. Its HTS code is 8542.32.00.41, which is used for classifying electronic integrated circuits. The technology used in this component is SRAM - asynchronous, which allows for fast and efficient data storage and retrieval. The terminal pitch, or distance between each terminal, is 0.8mm, making it suitable for smaller circuit boards. This component operates on a 3.3V power supply and is classified as volatile memory, meaning its data is only retained when power is supplied. Its output characteristics are 3-STATE, meaning it can be in an active, standby, or high impedance state. The minimum standby voltage for this component is 3.14V, ensuring stable operation. With a length of 18.415mm, this component can easily fit into compact electronic devices.
IS61LV6416-10TL Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)
44 Pins
I/O Type: COMMON
IS61LV6416-10TL Applications
There are a lot of ISSI, Integrated Silicon Solution Inc IS61LV6416-10TL Memory applications.
personal digital assistants
supercomputers
hard disk drive (HDD)
data buffer
nonvolatile BIOS memory
Cache memory
DVD disk buffer
printers
servers
networks
IS61LV6416-10TL More Descriptions
SRAM Chip ASynchronous Single 3.3 Volt 1M-bit 64K x 16 10ns 44-Pin TSOP-II
SRAM Operating temperature: -40... 85 °C Power supply: 3.1...3.6 V Supply current: 130 mA Organisation: 64 x 16 Bit Package: TSOP-44 (Type II)
IC, SRAM, 1MBIT, 10NS, TSOP-2-44; Memory Size: 1Mbit; SRAM Memory Configuration: 64K x 16bit; Supply Voltage Range: 3.135V to 3.6V; Memory Case Style: TSOP-II; No. of Pins: 44Pins; Access Time: 10ns; Operating Temperature Min: 0°C; Operating Temperature Max: 70°C; Product Range: -; Automotive Qualification Standard: -; RoHS Phthalates Compliant: Yes; MSL: MSL 3 - 168 hours; SVHC: No SVHC (12-Jan-2017); Operating Temperature Range: 0°C to 70°C; Supply Voltage Max: 3.6V; Supply Voltage Min: 3.135V
SRAM Operating temperature: -40... 85 °C Power supply: 3.1...3.6 V Supply current: 130 mA Organisation: 64 x 16 Bit Package: TSOP-44 (Type II)
IC, SRAM, 1MBIT, 10NS, TSOP-2-44; Memory Size: 1Mbit; SRAM Memory Configuration: 64K x 16bit; Supply Voltage Range: 3.135V to 3.6V; Memory Case Style: TSOP-II; No. of Pins: 44Pins; Access Time: 10ns; Operating Temperature Min: 0°C; Operating Temperature Max: 70°C; Product Range: -; Automotive Qualification Standard: -; RoHS Phthalates Compliant: Yes; MSL: MSL 3 - 168 hours; SVHC: No SVHC (12-Jan-2017); Operating Temperature Range: 0°C to 70°C; Supply Voltage Max: 3.6V; Supply Voltage Min: 3.135V
The three parts on the right have similar specifications to IS61LV6416-10TL.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Pin CountQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeMemory TypeSupply Current-MaxMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityAccess Time (Max)I/O TypeStandby Voltage-MinHeight Seated (Max)LengthWidthRoHS StatusLead FreeAdditional FeatureTime@Peak Reflow Temperature-Max (s)Clock FrequencySupplier Device PackageMax Operating TemperatureMin Operating TemperatureOperating Supply VoltageInterfaceMax Supply VoltageMin Supply VoltageNumber of PortsNominal Supply CurrentAccess TimeAddress Bus WidthDensitySync/AsyncWord SizeRadiation HardeningReach Compliance CodeJESD-30 CodeView Compare
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IS61LV6416-10TL6 WeeksSurface Mount44-TSOP (0.400, 10.16mm Width)YES440°C~70°C TATraye3yesActive3 (168 Hours)443A991.B.2.BMatte Tin (Sn) - annealed8542.32.00.41SRAM - Asynchronous3.135V~3.6VDUALNOT SPECIFIED13.3V0.8mmNOT SPECIFIED44Not Qualified3.63V3.3V3.135V1Mb 64K x 16Volatile0.12mASRAMParallel64KX163-STATE1610ns0.005A1048576 bit10 nsCOMMON3.14V1.2mm18.415mm10.16mmROHS3 CompliantLead Free---------------------
-
12 WeeksSurface Mount165-LBGAYES1650°C~70°C TATray--Active3 (168 Hours)1653A991.B.2.A-8542.32.00.41SRAM - Synchronous, DDR II1.71V~1.89VBOTTOMNOT SPECIFIED11.8V1mm-165-1.89V-1.71V72Mb 4M x 18Volatile-SRAMParallel4MX18-18--75497472 bit0.45 ns--1.4mm17mm15mmROHS3 Compliant-PIPELINED ARCHITECTURENOT SPECIFIED300MHz-----------------
-
8 WeeksSurface Mount44-BSOJ (0.400, 10.16mm Width)-44-40°C~85°C TATape & Reel (TR)--Active2 (1 Year)----SRAM - Asynchronous4.5V~5.5V-----------4Mb 256K x 16Volatile-SRAMParallel---10ns--------ROHS3 Compliant----44-SOJ85°C-40°C5VParallel5.5V4.5V150mA10ns18b4 MbAsynchronous16bNo--
-
-Surface Mount165-LBGAYES--40°C~85°C TATray--Last Time Buy3 (168 Hours)1653A991.B.2.A-8542.32.00.41SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM-11.8V1mm-165-1.89V-1.71V72Mb 4M x 18Volatile-SRAMParallel4MX18-18--75497472 bit---1.4mm17mm15mm--PIPELINED ARCHITECTURE-300MHz---------1.48ns-----compliantR-PBGA-B165
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