ISSI, Integrated Silicon Solution Inc IS61LV25616AL-10TI-TR
- Part Number:
- IS61LV25616AL-10TI-TR
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3233237-IS61LV25616AL-10TI-TR
- Description:
- IC SRAM 4MBIT 10NS 44TSOP
- Datasheet:
- IS61LV25616AL
ISSI, Integrated Silicon Solution Inc IS61LV25616AL-10TI-TR technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61LV25616AL-10TI-TR.
- Mounting TypeSurface Mount
- Package / Case44-TSOP (0.400, 10.16mm Width)
- Surface MountYES
- Number of Pins44
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)2 (1 Year)
- Number of Terminations44
- TechnologySRAM - Asynchronous
- Voltage - Supply3.135V~3.6V
- Terminal PositionDUAL
- Supply Voltage3.3V
- Terminal Pitch0.8mm
- Operating Supply Voltage3.3V
- Memory Size4Mb 256K x 16
- Number of Ports1
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page10ns
- Address Bus Width18b
- Density4 Mb
- I/O TypeCOMMON
- Standby Voltage-Min2V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
IS61LV25616AL-10TI-TR Overview
This product features a surface mount design, making it suitable for a variety of applications. Its part status is listed as "Not For New Designs," indicating that it is a well-established and reliable option. With 44 terminations, this product offers a high level of connectivity and versatility. Its technology is SRAM - Asynchronous, providing fast and efficient data storage. The voltage supply range is 3.135V~3.6V, ensuring compatibility with a wide range of systems. This product utilizes SRAM memory format and a parallel memory interface for efficient data transfer. Its output characteristics are 3-STATE, allowing for multiple devices to share the same data bus. With a memory width of 16, this product offers ample storage capacity. Additionally, its write cycle time for word and page is 10ns, ensuring quick and reliable data transfer.
IS61LV25616AL-10TI-TR Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)
44 Pins
Operating Supply Voltage:3.3V
I/O Type: COMMON
IS61LV25616AL-10TI-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61LV25616AL-10TI-TR Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
This product features a surface mount design, making it suitable for a variety of applications. Its part status is listed as "Not For New Designs," indicating that it is a well-established and reliable option. With 44 terminations, this product offers a high level of connectivity and versatility. Its technology is SRAM - Asynchronous, providing fast and efficient data storage. The voltage supply range is 3.135V~3.6V, ensuring compatibility with a wide range of systems. This product utilizes SRAM memory format and a parallel memory interface for efficient data transfer. Its output characteristics are 3-STATE, allowing for multiple devices to share the same data bus. With a memory width of 16, this product offers ample storage capacity. Additionally, its write cycle time for word and page is 10ns, ensuring quick and reliable data transfer.
IS61LV25616AL-10TI-TR Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)
44 Pins
Operating Supply Voltage:3.3V
I/O Type: COMMON
IS61LV25616AL-10TI-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61LV25616AL-10TI-TR Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
IS61LV25616AL-10TI-TR More Descriptions
SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin TSOP-II T/R
IC SRAM 4MBIT PARALLEL 44TSOP II
SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v
IC SRAM 4MBIT PARALLEL 44TSOP II
SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v
The three parts on the right have similar specifications to IS61LV25616AL-10TI-TR.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionSupply VoltageTerminal PitchOperating Supply VoltageMemory SizeNumber of PortsMemory TypeMemory FormatMemory InterfaceOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityI/O TypeStandby Voltage-MinRadiation HardeningRoHS StatusFactory Lead TimeECCN CodeAdditional FeatureHTS CodePeak Reflow Temperature (Cel)Number of FunctionsTime@Peak Reflow Temperature-Max (s)Pin CountSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Clock FrequencyOrganizationMemory DensityAccess Time (Max)LengthHeight Seated (Max)WidthSupplier Device PackageMax Operating TemperatureMin Operating TemperatureInterfaceMax Supply VoltageMin Supply VoltageNominal Supply CurrentAccess TimeSync/AsyncWord SizeReach Compliance CodeJESD-30 CodeView Compare
-
IS61LV25616AL-10TI-TRSurface Mount44-TSOP (0.400, 10.16mm Width)YES44-40°C~85°C TATape & Reel (TR)Not For New Designs2 (1 Year)44SRAM - Asynchronous3.135V~3.6VDUAL3.3V0.8mm3.3V4Mb 256K x 161VolatileSRAMParallel3-STATE1610ns18b4 MbCOMMON2VNoNon-RoHS Compliant------------------------------
-
Surface Mount165-LBGAYES1650°C~70°C TATrayActive3 (168 Hours)165SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM1.8V1mm-72Mb 4M x 18-VolatileSRAMParallel-18------ROHS3 Compliant12 Weeks3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41NOT SPECIFIED1NOT SPECIFIED1651.89V1.71V300MHz4MX1875497472 bit0.45 ns17mm1.4mm15mm------------
-
Surface Mount44-BSOJ (0.400, 10.16mm Width)-44-40°C~85°C TATape & Reel (TR)Active2 (1 Year)-SRAM - Asynchronous4.5V~5.5V---5V4Mb 256K x 161VolatileSRAMParallel--10ns18b4 Mb--NoROHS3 Compliant8 Weeks----------------44-SOJ85°C-40°CParallel5.5V4.5V50mA10nsAsynchronous16b--
-
Surface Mount165-LBGAYES--40°C~85°C TATrayLast Time Buy3 (168 Hours)165SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM1.8V1mm-72Mb 4M x 18-VolatileSRAMParallel-18--------3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41-1-1651.89V1.71V300MHz4MX1875497472 bit-17mm1.4mm15mm-------1.48ns--compliantR-PBGA-B165
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
07 September 2023
What Is The Difference Between NE5532 And RC4558D?
Ⅰ. Overview of NE5532NE5532 is a dual operational amplifier chip with excellent performance and low noise characteristics. Its circuit design is similar to that of a common operational... -
07 September 2023
TPC8129 Internal Circuit, Specifications, Application and Marking
Ⅰ. Overview of TPC8129TPC8129 is a product of Toshiba, a Japanese comprehensive electronic and electrical company. It is a chip for LED driver circuits and is mainly used... -
12 September 2023
The Difference Between L293D and L298N
In this article we will explore the main differences between the L293D and L298N motor drivers. Both motor drives have their own unique features and applications. Understanding the... -
12 September 2023
Comprehensive Analysis of CR123A battery: Features, Applications and Purchase
Ⅰ. CR123A overviewThe CR123A battery, classified under the non-rechargeable (primary) category, is a high-performance power source with distinct specifications. Featuring a robust lithium manganese composition, it boasts a...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.