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ISSI, Integrated Silicon Solution Inc IS61LV12824-10TQLI
- Part Number:
- IS61LV12824-10TQLI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3228493-IS61LV12824-10TQLI
- Description:
- IC SRAM 3MBIT 10NS 100TQFP
- ECAD Model:
-
- Datasheet:
- IS61LV12824
ISSI, Integrated Silicon Solution Inc IS61LV12824-10TQLI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61LV12824-10TQLI.
- Mounting TypeSurface Mount
- Package / Case100-LQFP
- Surface MountYES
- Number of Pins100
- Weight657.000198mg
- Operating Temperature-40°C~85°C TA
- PackagingTray
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations100
- Terminal FinishMatte Tin (Sn) - annealed
- TechnologySRAM - Asynchronous
- Voltage - Supply3.135V~3.6V
- Terminal PositionQUAD
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.65mm
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count100
- Operating Supply Voltage3.3V
- Supply Voltage-Max (Vsup)3.63V
- Supply Voltage-Min (Vsup)2.97V
- Memory Size3Mb 128K x 24
- Number of Ports1
- Nominal Supply Current210mA
- Memory TypeVolatile
- Max Supply Current210mA
- Memory FormatSRAM
- Memory InterfaceParallel
- Output Characteristics3-STATE
- Memory Width24
- Write Cycle Time - Word, Page10ns
- Address Bus Width17b
- Density3 Mb
- Standby Current-Max0.02A
- I/O TypeCOMMON
- Sync/AsyncAsynchronous
- Word Size24b
- Standby Voltage-Min3V
- Length20mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
IS61LV12824-10TQLI Overview
The weight of this particular SRAM - Asynchronous technology is 657.000198mg, making it a lightweight and easily manageable component. It is classified under the JESD-609 Code e3, indicating its compliance with industry standards. Moreover, it is also classified as Pbfree with a code of yes, ensuring that it is free from hazardous materials. With a peak reflow temperature of 260 degrees Celsius, this SRAM can withstand high temperatures without compromising its performance. The output characteristics of this component are 3-STATE, providing flexibility in terms of data transfer. Its density is 3 Mb, making it suitable for various applications. Additionally, it has a low standby current of 0.02A and a maximum supply current of 210mA, making it energy-efficient. With a word size of 24b, this SRAM offers a wide range of data storage capabilities.
IS61LV12824-10TQLI Features
Package / Case: 100-LQFP
100 Pins
Operating Supply Voltage:3.3V
I/O Type: COMMON
IS61LV12824-10TQLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61LV12824-10TQLI Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
The weight of this particular SRAM - Asynchronous technology is 657.000198mg, making it a lightweight and easily manageable component. It is classified under the JESD-609 Code e3, indicating its compliance with industry standards. Moreover, it is also classified as Pbfree with a code of yes, ensuring that it is free from hazardous materials. With a peak reflow temperature of 260 degrees Celsius, this SRAM can withstand high temperatures without compromising its performance. The output characteristics of this component are 3-STATE, providing flexibility in terms of data transfer. Its density is 3 Mb, making it suitable for various applications. Additionally, it has a low standby current of 0.02A and a maximum supply current of 210mA, making it energy-efficient. With a word size of 24b, this SRAM offers a wide range of data storage capabilities.
IS61LV12824-10TQLI Features
Package / Case: 100-LQFP
100 Pins
Operating Supply Voltage:3.3V
I/O Type: COMMON
IS61LV12824-10TQLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61LV12824-10TQLI Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
IS61LV12824-10TQLI More Descriptions
SRAM Chip Async Single 3.3V 3M-bit 128K x 24-bit 10ns 100-Pin TQFP
e3 Surface Mount Tray SRAM - Asynchronous ic memory 10ns 20mm 210mA 3Mb
IC SRAM 3MBIT PARALLEL 100TQFP
3MB,HIGH-SPEED,ASYNC,128K X 24
e3 Surface Mount Tray SRAM - Asynchronous ic memory 10ns 20mm 210mA 3Mb
IC SRAM 3MBIT PARALLEL 100TQFP
3MB,HIGH-SPEED,ASYNC,128K X 24
The three parts on the right have similar specifications to IS61LV12824-10TQLI.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsWeightOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsNominal Supply CurrentMemory TypeMax Supply CurrentMemory FormatMemory InterfaceOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityStandby Current-MaxI/O TypeSync/AsyncWord SizeStandby Voltage-MinLengthRadiation HardeningRoHS StatusFactory Lead TimeECCN CodeAdditional FeatureHTS CodeClock FrequencyOrganizationMemory DensityAccess Time (Max)Height Seated (Max)WidthSupplier Device PackageMax Operating TemperatureMin Operating TemperatureInterfaceMax Supply VoltageMin Supply VoltageAccess TimeView Compare
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IS61LV12824-10TQLISurface Mount100-LQFPYES100657.000198mg-40°C~85°C TATraye3yesActive3 (168 Hours)100Matte Tin (Sn) - annealedSRAM - Asynchronous3.135V~3.6VQUAD26013.3V0.65mm401003.3V3.63V2.97V3Mb 128K x 241210mAVolatile210mASRAMParallel3-STATE2410ns17b3 Mb0.02ACOMMONAsynchronous24b3V20mmNoROHS3 Compliant------------------ -
Surface Mount165-LBGAYES165-0°C~70°C TATray--Active3 (168 Hours)165-SRAM - Synchronous, DDR II1.71V~1.89VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIED165-1.89V1.71V72Mb 4M x 18--Volatile-SRAMParallel-18--------17mm-ROHS3 Compliant12 Weeks3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41250MHz4MX1875497472 bit0.45 ns1.4mm15mm-------
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Surface Mount165-LBGAYES165-0°C~70°C TATray--Active3 (168 Hours)165-SRAM - Synchronous, DDR II1.71V~1.89VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIED165-1.89V1.71V72Mb 4M x 18--Volatile-SRAMParallel-18--------17mm-ROHS3 Compliant12 Weeks3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41300MHz4MX1875497472 bit0.45 ns1.4mm15mm-------
-
Surface Mount44-BSOJ (0.400, 10.16mm Width)-44--40°C~85°C TATape & Reel (TR)--Active2 (1 Year)--SRAM - Asynchronous4.5V~5.5V-------5V--4Mb 256K x 16150mAVolatile-SRAMParallel--10ns18b4 Mb--Asynchronous16b--NoROHS3 Compliant8 Weeks---------44-SOJ85°C-40°CParallel5.5V4.5V10ns
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ISSI, Integrated Silicon Solution Inc
5V V Surface Mount 32 Pin Memory IC 4 Mb kb 20.75mm mm 15mA mA 8b b
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