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ISSI, Integrated Silicon Solution Inc IS61LF51218A-7.5TQI
- Part Number:
- IS61LF51218A-7.5TQI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3236193-IS61LF51218A-7.5TQI
- Description:
- IC SRAM 9MBIT 7.5NS 100TQFP
- ECAD Model:
-
- Datasheet:
- IS61(LF,VF)25636A, 51218A
ISSI, Integrated Silicon Solution Inc IS61LF51218A-7.5TQI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61LF51218A-7.5TQI.
- Mounting TypeSurface Mount
- Package / Case100-LQFP
- Surface MountYES
- Number of Pins100
- Operating Temperature-40°C~85°C TA
- PackagingTray
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)2 (1 Year)
- Number of Terminations100
- ECCN Code3A991.B.2.A
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureFLOW-THROUGH ARCHITECTURE
- HTS Code8542.32.00.41
- TechnologySRAM - Synchronous, SDR
- Voltage - Supply3.135V~3.6V
- Terminal PositionQUAD
- Peak Reflow Temperature (Cel)240
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.65mm
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count100
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)3.465V
- Power Supplies2.5/3.33.3V
- Supply Voltage-Min (Vsup)3.135V
- Memory Size9Mb 512K x 18
- Memory TypeVolatile
- Clock Frequency117MHz
- Supply Current-Max0.185mA
- Access Time7.5ns
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization512KX18
- Output Characteristics3-STATE
- Memory Width18
- Standby Current-Max0.085A
- Memory Density9437184 bit
- I/O TypeCOMMON
- Standby Voltage-Min3.14V
- Height Seated (Max)1.6mm
- Length20mm
- Width14mm
- RoHS StatusNon-RoHS Compliant
IS61LF51218A-7.5TQI Overview
The product with JESD-609 Code e0 has 100 terminations and operates within a voltage supply range of 3.135V to 3.6V. It can withstand a peak reflow temperature of 240 degrees Celsius and has 1 function. Currently, it is not qualified for use. The output characteristics are 3-STATE and it has a memory width of 18. The maximum standby current is 0.085A and the minimum standby voltage is 3.14V.
IS61LF51218A-7.5TQI Features
Package / Case: 100-LQFP
100 Pins
Additional Feature:FLOW-THROUGH ARCHITECTURE
I/O Type: COMMON
IS61LF51218A-7.5TQI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61LF51218A-7.5TQI Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
The product with JESD-609 Code e0 has 100 terminations and operates within a voltage supply range of 3.135V to 3.6V. It can withstand a peak reflow temperature of 240 degrees Celsius and has 1 function. Currently, it is not qualified for use. The output characteristics are 3-STATE and it has a memory width of 18. The maximum standby current is 0.085A and the minimum standby voltage is 3.14V.
IS61LF51218A-7.5TQI Features
Package / Case: 100-LQFP
100 Pins
Additional Feature:FLOW-THROUGH ARCHITECTURE
I/O Type: COMMON
IS61LF51218A-7.5TQI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61LF51218A-7.5TQI Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
IS61LF51218A-7.5TQI More Descriptions
SRAM Chip Sync Dual 2.5V/3.3V 9M-Bit 512K x 18 7.5ns 100-Pin TQFP
IC SRAM 9MBIT PARALLEL 100TQFP
SRAM 8Mb 512Kx18 7.5ns Sync SRAM 3.3v
IC SRAM 9MBIT PARALLEL 100TQFP
SRAM 8Mb 512Kx18 7.5ns Sync SRAM 3.3v
The three parts on the right have similar specifications to IS61LF51218A-7.5TQI.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeMemory TypeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthStandby Current-MaxMemory DensityI/O TypeStandby Voltage-MinHeight Seated (Max)LengthWidthRoHS StatusFactory Lead TimeAccess Time (Max)Supplier Device PackageMax Operating TemperatureMin Operating TemperatureOperating Supply VoltageInterfaceMax Supply VoltageMin Supply VoltageNumber of PortsNominal Supply CurrentWrite Cycle Time - Word, PageAddress Bus WidthDensitySync/AsyncWord SizeRadiation HardeningView Compare
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IS61LF51218A-7.5TQISurface Mount100-LQFPYES100-40°C~85°C TATraye0noNot For New Designs2 (1 Year)1003A991.B.2.ATin/Lead (Sn/Pb)FLOW-THROUGH ARCHITECTURE8542.32.00.41SRAM - Synchronous, SDR3.135V~3.6VQUAD24013.3V0.65mm30100Not Qualified3.465V2.5/3.33.3V3.135V9Mb 512K x 18Volatile117MHz0.185mA7.5nsSRAMParallel512KX183-STATE180.085A9437184 bitCOMMON3.14V1.6mm20mm14mmNon-RoHS Compliant------------------ -
Surface Mount165-LBGAYES1650°C~70°C TATray--Active3 (168 Hours)1653A991.B.2.A-PIPELINED ARCHITECTURE8542.32.00.41SRAM - Synchronous, DDR II1.71V~1.89VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIED165-1.89V-1.71V72Mb 4M x 18Volatile250MHz--SRAMParallel4MX18-18-75497472 bit--1.4mm17mm15mmROHS3 Compliant12 Weeks0.45 ns---------------
-
Surface Mount165-LBGAYES1650°C~70°C TATray--Active3 (168 Hours)1653A991.B.2.A-PIPELINED ARCHITECTURE8542.32.00.41SRAM - Synchronous, DDR II1.71V~1.89VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIED165-1.89V-1.71V72Mb 4M x 18Volatile300MHz--SRAMParallel4MX18-18-75497472 bit--1.4mm17mm15mmROHS3 Compliant12 Weeks0.45 ns---------------
-
Surface Mount44-BSOJ (0.400, 10.16mm Width)-44-40°C~85°C TATape & Reel (TR)--Active2 (1 Year)-----SRAM - Asynchronous4.5V~5.5V-----------4Mb 256K x 16Volatile--10nsSRAMParallel----------ROHS3 Compliant8 Weeks-44-SOJ85°C-40°C5VParallel5.5V4.5V150mA10ns18b4 MbAsynchronous16bNo
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ISSI, Integrated Silicon Solution Inc
5V V Surface Mount 32 Pin Memory IC 4 Mb kb 20.75mm mm 15mA mA 8b b
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