ISSI, Integrated Silicon Solution Inc IS61DDP2B41M18A-400M3L
- Part Number:
- IS61DDP2B41M18A-400M3L
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3236776-IS61DDP2B41M18A-400M3L
- Description:
- IC SDRAM 18MBIT 400MHZ 165BGA
- Datasheet:
- IS61DDP2B41M18A-400M3L
ISSI, Integrated Silicon Solution Inc IS61DDP2B41M18A-400M3L technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61DDP2B41M18A-400M3L.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / Case165-LBGA
- Surface MountYES
- Number of Pins165
- Operating Temperature0°C~70°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations165
- ECCN Code3A991.B.2.A
- Additional FeaturePIPELINED ARCHITECTURE
- HTS Code8542.32.00.41
- TechnologySRAM - Synchronous, DDR IIP
- Voltage - Supply1.71V~1.89V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1mm
- Pin Count165
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)1.89V
- Power Supplies1.5/1.81.8V
- Supply Voltage-Min (Vsup)1.71V
- Memory Size18Mb 1M x 18
- Memory TypeVolatile
- Clock Frequency400MHz
- Supply Current-Max0.75mA
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization1MX18
- Output Characteristics3-STATE
- Memory Width18
- Standby Current-Max0.32A
- Memory Density18874368 bit
- Access Time (Max)0.45 ns
- I/O TypeCOMMON
- Standby Voltage-Min1.71V
- Height Seated (Max)1.4mm
- Length17mm
- Width15mm
- RoHS StatusROHS3 Compliant
IS61DDP2B41M18A-400M3L Overview
This product features a 165-LBGA package/case and is currently in active production. With one function and a 1mm terminal pitch, it is designed for efficient and reliable performance. The power supplies for this product are 1.5/1.8/1.8V, providing stable and consistent power to the device. The minimum supply voltage is 1.71V, ensuring proper operation. This product utilizes volatile memory, specifically SRAM, for fast and reliable data storage. Its standby current is a maximum of 0.32A, making it energy-efficient. Additionally, the I/O type is COMMON, allowing for compatibility with a wide range of devices. Overall, this product offers high-quality and versatile functionality for various applications.
IS61DDP2B41M18A-400M3L Features
Package / Case: 165-LBGA
165 Pins
Additional Feature:PIPELINED ARCHITECTURE
I/O Type: COMMON
IS61DDP2B41M18A-400M3L Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61DDP2B41M18A-400M3L Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
This product features a 165-LBGA package/case and is currently in active production. With one function and a 1mm terminal pitch, it is designed for efficient and reliable performance. The power supplies for this product are 1.5/1.8/1.8V, providing stable and consistent power to the device. The minimum supply voltage is 1.71V, ensuring proper operation. This product utilizes volatile memory, specifically SRAM, for fast and reliable data storage. Its standby current is a maximum of 0.32A, making it energy-efficient. Additionally, the I/O type is COMMON, allowing for compatibility with a wide range of devices. Overall, this product offers high-quality and versatile functionality for various applications.
IS61DDP2B41M18A-400M3L Features
Package / Case: 165-LBGA
165 Pins
Additional Feature:PIPELINED ARCHITECTURE
I/O Type: COMMON
IS61DDP2B41M18A-400M3L Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61DDP2B41M18A-400M3L Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
IS61DDP2B41M18A-400M3L More Descriptions
SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin LFBGA
1.71V~1.89V 18Mbit FBGA-165(15x17) SRAM ROHS
IC SRAM 18MBIT PARALLEL 165LFBGA
SRAM 18Mb 400Mhz 1Mx18 DDR IIP Sync SRAM
18Mb, Ddr Iip (Burst Of 4) Cio, Sync Sram, 1M X 18, 2.0 Read Latency, 165 Ball Fbga (15X17 Mm), Rohs |Integrated Silicon Solution (Issi) IS61DDP2B41M18A-400M3L
1.71V~1.89V 18Mbit FBGA-165(15x17) SRAM ROHS
IC SRAM 18MBIT PARALLEL 165LFBGA
SRAM 18Mb 400Mhz 1Mx18 DDR IIP Sync SRAM
18Mb, Ddr Iip (Burst Of 4) Cio, Sync Sram, 1M X 18, 2.0 Read Latency, 165 Ball Fbga (15X17 Mm), Rohs |Integrated Silicon Solution (Issi) IS61DDP2B41M18A-400M3L
The three parts on the right have similar specifications to IS61DDP2B41M18A-400M3L.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchPin CountQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeMemory TypeClock FrequencySupply Current-MaxMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthStandby Current-MaxMemory DensityAccess Time (Max)I/O TypeStandby Voltage-MinHeight Seated (Max)LengthWidthRoHS StatusPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Supplier Device PackageMax Operating TemperatureMin Operating TemperatureOperating Supply VoltageInterfaceMax Supply VoltageMin Supply VoltageNumber of PortsNominal Supply CurrentAccess TimeWrite Cycle Time - Word, PageAddress Bus WidthDensitySync/AsyncWord SizeRadiation HardeningReach Compliance CodeJESD-30 CodeView Compare
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IS61DDP2B41M18A-400M3L12 WeeksSurface Mount165-LBGAYES1650°C~70°C TATrayActive3 (168 Hours)1653A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41SRAM - Synchronous, DDR IIP1.71V~1.89VBOTTOM11.8V1mm165Not Qualified1.89V1.5/1.81.8V1.71V18Mb 1M x 18Volatile400MHz0.75mASRAMParallel1MX183-STATE180.32A18874368 bit0.45 nsCOMMON1.71V1.4mm17mm15mmROHS3 Compliant---------------------
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12 WeeksSurface Mount165-LBGAYES1650°C~70°C TATrayActive3 (168 Hours)1653A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM11.8V1mm165-1.89V-1.71V72Mb 4M x 18Volatile300MHz-SRAMParallel4MX18-18-75497472 bit0.45 ns--1.4mm17mm15mmROHS3 CompliantNOT SPECIFIEDNOT SPECIFIED------------------
-
8 WeeksSurface Mount44-BSOJ (0.400, 10.16mm Width)-44-40°C~85°C TATape & Reel (TR)Active2 (1 Year)----SRAM - Asynchronous4.5V~5.5V---------4Mb 256K x 16Volatile--SRAMParallel-----------ROHS3 Compliant--44-SOJ85°C-40°C5VParallel5.5V4.5V150mA10ns10ns18b4 MbAsynchronous16bNo--
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-Surface Mount165-LBGAYES--40°C~85°C TATrayLast Time Buy3 (168 Hours)1653A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM11.8V1mm165-1.89V-1.71V72Mb 4M x 18Volatile300MHz-SRAMParallel4MX18-18-75497472 bit---1.4mm17mm15mm------------1.48ns------compliantR-PBGA-B165
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