ISSI, Integrated Silicon Solution Inc IS45S16800F-7TLA2
- Part Number:
- IS45S16800F-7TLA2
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3233245-IS45S16800F-7TLA2
- Description:
- IC SDRAM 128MBIT 143MHZ 54TSOP
- ECAD Model:
-
- Datasheet:
- IS45S16800F-7TLA2
ISSI, Integrated Silicon Solution Inc IS45S16800F-7TLA2 technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS45S16800F-7TLA2.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case54-TSOP (0.400, 10.16mm Width)
- Surface MountYES
- Number of Pins54
- Operating Temperature-40°C~105°C TA
- PackagingTray
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations54
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureAUTO/SELF REFRESH
- TechnologySDRAM
- Voltage - Supply3V~3.6V
- Terminal PositionDUAL
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.8mm
- Pin Count54
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)3.6V
- Power Supplies3.3V
- Supply Voltage-Min (Vsup)3V
- Memory Size128Mb 8M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency143MHz
- Supply Current-Max0.1mA
- Access Time5.4ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width16b
- Organization8MX16
- Output Characteristics3-STATE
- Memory Width16
- Standby Current-Max0.002A
- Memory Density134217728 bit
- Screening LevelAEC-Q100
- I/O TypeCOMMON
- Refresh Cycles4096
- Sequential Burst Length1248FP
- Interleaved Burst Length1248
- Height Seated (Max)1.2mm
- Length22.22mm
- RoHS StatusROHS3 Compliant
IS45S16800F-7TLA2 Overview
The JESD-609 Code for this particular technology, SDRAM, is e3, indicating its compliance with industry standards. With a supply voltage range of 3V to 3.6V, this device requires a stable and reliable power source to function effectively. It has a single function and a total of 54 terminations, making it suitable for a wide range of applications. Although it is not yet qualified, it has a refresh cycle of 4096, ensuring data integrity and reliability. Additionally, it is also compliant with the ROHS3 standards, making it environmentally friendly. With a minimum supply voltage of 3V, this device offers a high level of performance while consuming minimal power from the 3.3V power supply.
IS45S16800F-7TLA2 Features
Package / Case: 54-TSOP (0.400, 10.16mm Width)
54 Pins
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS45S16800F-7TLA2 Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS45S16800F-7TLA2 Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
The JESD-609 Code for this particular technology, SDRAM, is e3, indicating its compliance with industry standards. With a supply voltage range of 3V to 3.6V, this device requires a stable and reliable power source to function effectively. It has a single function and a total of 54 terminations, making it suitable for a wide range of applications. Although it is not yet qualified, it has a refresh cycle of 4096, ensuring data integrity and reliability. Additionally, it is also compliant with the ROHS3 standards, making it environmentally friendly. With a minimum supply voltage of 3V, this device offers a high level of performance while consuming minimal power from the 3.3V power supply.
IS45S16800F-7TLA2 Features
Package / Case: 54-TSOP (0.400, 10.16mm Width)
54 Pins
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS45S16800F-7TLA2 Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS45S16800F-7TLA2 Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
IS45S16800F-7TLA2 More Descriptions
DRAM Chip SDRAM 128Mbit 8Mx16 3.3V Automotive 54-Pin TSOP-II
EAR99 Surface Mount Tray 8MX16 ic memory 143MHz 5.4ns 1.2mm 0.002A
DRAM Chip SDRAM 128M-Bit 8M x 16 3.3V 54-Pin TFBGA
DDR SDRAM, 8Mx16, 3.3V, 4K, TSOP2-54,RoHSISSI SCT
DRAM 128Mb, 3.3V, 143MHz 8Mx16 SDR SDRAM
Automotive (-40 To 105C), 128M, 3.3V, Sdram, 8Mx16, 143Mhz, 54 Pin Tsop Ii (400 Mil) Rohs |Integrated Silicon Solution (Issi) IS45S16800F-7TLA2
EAR99 Surface Mount Tray 8MX16 ic memory 143MHz 5.4ns 1.2mm 0.002A
DRAM Chip SDRAM 128M-Bit 8M x 16 3.3V 54-Pin TFBGA
DDR SDRAM, 8Mx16, 3.3V, 4K, TSOP2-54,RoHSISSI SCT
DRAM 128Mb, 3.3V, 143MHz 8Mx16 SDR SDRAM
Automotive (-40 To 105C), 128M, 3.3V, Sdram, 8Mx16, 143Mhz, 54 Pin Tsop Ii (400 Mil) Rohs |Integrated Silicon Solution (Issi) IS45S16800F-7TLA2
The three parts on the right have similar specifications to IS45S16800F-7TLA2.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchPin CountQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationOutput CharacteristicsMemory WidthStandby Current-MaxMemory DensityScreening LevelI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthRoHS StatusWidthJESD-30 CodeView Compare
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IS45S16800F-7TLA28 WeeksSurface Mount54-TSOP (0.400, 10.16mm Width)YES54-40°C~105°C TATraye3Active3 (168 Hours)54EAR99Matte Tin (Sn)AUTO/SELF REFRESHSDRAM3V~3.6VDUAL13.3V0.8mm54Not Qualified3.6V3.3V3V128Mb 8M x 161VolatileSYNCHRONOUS143MHz0.1mA5.4nsDRAMParallel16b8MX163-STATE160.002A134217728 bitAEC-Q100COMMON40961248FP12481.2mm22.22mmROHS3 Compliant--- -
8 WeeksSurface Mount54-TSOP (0.400, 10.16mm Width)-54-40°C~85°C TATube-Active3 (168 Hours)----SDRAM3V~3.6V---------512Mb 32M x 16-Volatile-167MHz-5.4nsDRAMParallel-------------ROHS3 Compliant--
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8 WeeksSurface Mount54-TSOP (0.400, 10.16mm Width)YES54-40°C~85°C TATube-Active3 (168 Hours)54EAR99-PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM3V~3.6VDUAL13.3V0.8mm-Not Qualified3.6V3.3V3V512Mb 32M x 161VolatileSYNCHRONOUS143MHz0.16mA5.4nsDRAMParallel-32MX163-STATE160.004A536870912 bitAEC-Q100COMMON81921248FP12481.2mm22.22mmROHS3 Compliant10.16mm-
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8 WeeksSurface Mount60-TFBGAYES--40°C~105°C TATray-Active3 (168 Hours)60EAR99-PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM3V~3.6VBOTTOM13.3V0.65mm-Not Qualified3.6V3.3V3V16Mb 1M x 161VolatileSYNCHRONOUS143MHz0.08mA5.5nsDRAMParallel-1MX163-STATE160.0035A16777216 bitAEC-Q100COMMON20481248FP12481.2mm10.1mmROHS3 Compliant6.4mmR-PBGA-B60
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ISSI, Integrated Silicon Solution Inc
Surface Mount 86 Pin Memory IC 128 Mb kb 22.22mm mm 180mA mA
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ISSI, Integrated Silicon Solution Inc
Surface Mount 54 Pin Memory IC 256 Mb kb 8mm mm 130mA mA
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