ISSI, Integrated Silicon Solution Inc IS45S16800E-7BLA1
- Part Number:
- IS45S16800E-7BLA1
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3245255-IS45S16800E-7BLA1
- Description:
- IC SDRAM 128MBIT 143MHZ 54BGA
- Datasheet:
- IS45S81600E, IS45S16800E
ISSI, Integrated Silicon Solution Inc IS45S16800E-7BLA1 technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS45S16800E-7BLA1.
- Mounting TypeSurface Mount
- Package / Case54-TFBGA
- Surface MountYES
- Number of Pins54
- Operating Temperature-40°C~85°C TA
- PackagingTray
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations54
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAUTO/SELF REFRESH
- TechnologySDRAM
- Voltage - Supply3V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)10
- Pin Count54
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)3.6V
- Power Supplies3.3V
- Supply Voltage-Min (Vsup)3V
- Memory Size128Mb 8M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency143MHz
- Supply Current-Max0.16mA
- Access Time5.4ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width16b
- Organization8MX16
- Output Characteristics3-STATE
- Memory Width16
- Standby Current-Max0.001A
- Memory Density134217728 bit
- I/O TypeCOMMON
- Refresh Cycles4096
- Sequential Burst Length1248FP
- Interleaved Burst Length1248
- Height Seated (Max)1.2mm
- Length8mm
- RoHS StatusRoHS Compliant
IS45S16800E-7BLA1 Overview
The JESD-609 Code for this particular product is e1, indicating its classification within the industry. Its Part Status is listed as Obsolete, meaning it is no longer in production. The Moisture Sensitivity Level (MSL) is 3, indicating that it can withstand exposure to moisture for up to 168 hours. The Voltage - Supply is listed as 3V~3.6V, indicating the range of voltage that this product requires to operate. It has 1 function and can withstand a maximum peak reflow temperature of 10 seconds. This product is currently not qualified for use, as indicated by its Qualification Status. It has a Refresh Cycle of 4096 and a Sequential Burst Length of 1248FP. Its maximum seated height is 1.2mm.
IS45S16800E-7BLA1 Features
Package / Case: 54-TFBGA
54 Pins
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS45S16800E-7BLA1 Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS45S16800E-7BLA1 Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
The JESD-609 Code for this particular product is e1, indicating its classification within the industry. Its Part Status is listed as Obsolete, meaning it is no longer in production. The Moisture Sensitivity Level (MSL) is 3, indicating that it can withstand exposure to moisture for up to 168 hours. The Voltage - Supply is listed as 3V~3.6V, indicating the range of voltage that this product requires to operate. It has 1 function and can withstand a maximum peak reflow temperature of 10 seconds. This product is currently not qualified for use, as indicated by its Qualification Status. It has a Refresh Cycle of 4096 and a Sequential Burst Length of 1248FP. Its maximum seated height is 1.2mm.
IS45S16800E-7BLA1 Features
Package / Case: 54-TFBGA
54 Pins
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS45S16800E-7BLA1 Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS45S16800E-7BLA1 Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
IS45S16800E-7BLA1 More Descriptions
DRAM Chip SDRAM 128Mbit 8Mx16 3.3V Automotive 54-Pin TFBGA
IC DRAM 128MBIT PARALLEL 54TFBGA
DRAM 128M (8Mx16) 143MHz SDR SDRAM 3.3v
IC DRAM 128MBIT PARALLEL 54TFBGA
DRAM 128M (8Mx16) 143MHz SDR SDRAM 3.3v
The three parts on the right have similar specifications to IS45S16800E-7BLA1.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationOutput CharacteristicsMemory WidthStandby Current-MaxMemory DensityI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthRoHS StatusFactory Lead TimeMountOperating Supply VoltageNominal Supply CurrentAddress Bus WidthDensityJESD-30 CodeScreening LevelWidthView Compare
-
IS45S16800E-7BLA1Surface Mount54-TFBGAYES54-40°C~85°C TATraye1yesObsolete3 (168 Hours)54EAR99Tin/Silver/Copper (Sn/Ag/Cu)AUTO/SELF REFRESHSDRAM3V~3.6VBOTTOM26013.3V0.8mm1054Not Qualified3.6V3.3V3V128Mb 8M x 161VolatileSYNCHRONOUS143MHz0.16mA5.4nsDRAMParallel16b8MX163-STATE160.001A134217728 bitCOMMON40961248FP12481.2mm8mmRoHS Compliant----------
-
Surface Mount54-TFBGA-54-40°C~105°C TATray--Active3 (168 Hours)54EAR99-AUTO/SELF REFRESHSDRAM3V~3.6VBOTTOMNOT SPECIFIED13.3V0.8mmNOT SPECIFIED54Not Qualified3.6V-3V256Mb 16M x 161VolatileSYNCHRONOUS143MHz-5.4nsDRAMParallel16b16MX163-STATE160.004A-COMMON81921248FP12481.2mm8mmROHS3 Compliant8 WeeksSurface Mount3.3V130mA15b256 Mb---
-
Surface Mount54-TSOP (0.400, 10.16mm Width)-54-40°C~85°C TATube--Active3 (168 Hours)----SDRAM3V~3.6V-----------512Mb 32M x 16-Volatile-167MHz-5.4nsDRAMParallel------------ROHS3 Compliant8 Weeks--------
-
Surface Mount60-TFBGAYES--40°C~105°C TATray--Active3 (168 Hours)60EAR99-PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM3V~3.6VBOTTOM-13.3V0.65mm--Not Qualified3.6V3.3V3V16Mb 1M x 161VolatileSYNCHRONOUS143MHz0.08mA5.5nsDRAMParallel-1MX163-STATE160.0035A16777216 bitCOMMON20481248FP12481.2mm10.1mmROHS3 Compliant8 Weeks-----R-PBGA-B60AEC-Q1006.4mm
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