ISSI, Integrated Silicon Solution Inc IS43TR82560BL-125KBLI
- Part Number:
- IS43TR82560BL-125KBLI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3228713-IS43TR82560BL-125KBLI
- Description:
- IC SDRAM 2GBIT 800MHZ 78BGA
- Datasheet:
- IS4xTR16128B(L), IS4xTR82560B(L)
ISSI, Integrated Silicon Solution Inc IS43TR82560BL-125KBLI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43TR82560BL-125KBLI.
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case78-TFBGA
- Number of Pins78
- Operating Temperature-40°C~95°C TC
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations78
- Additional FeatureAUTO/SELF REFRESH
- TechnologySDRAM - DDR3L
- Voltage - Supply1.283V~1.45V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.35V
- Terminal Pitch0.8mm
- Operating Supply Voltage1.35V
- Supply Voltage-Max (Vsup)1.45V
- Supply Voltage-Min (Vsup)1.283V
- Memory Size2Gb 256M x 8
- Number of Ports1
- Nominal Supply Current160mA
- Memory TypeVolatile
- Operating ModeASYNCHRONOUS
- Clock Frequency800MHz
- Access Time20ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization256MX8
- Memory Width8
- Write Cycle Time - Word, Page15ns
- Address Bus Width18b
- Density2 Gb
- Height Seated (Max)1.2mm
- Length10.5mm
- RoHS StatusROHS3 Compliant
IS43TR82560BL-125KBLI Overview
The package or case for this particular product is a 78-TFBGA, which stands for Thin Fine Pitch Ball Grid Array. This type of packaging is commonly used for integrated circuits and is known for its compact size and high density. The Moisture Sensitivity Level (MSL) for this product is 3, meaning that it can withstand exposure to moisture for up to 168 hours without any damage. It has a total of 78 terminations, which are the points of connection for the integrated circuit. One of the additional features of this product is AUTO/SELF REFRESH, which allows for automatic refreshing of the memory without any external intervention. The technology used for this product is SDRAM - DDR3L, which stands for Synchronous Dynamic Random Access Memory - Double Data Rate 3 Low Voltage. It operates at a supply voltage of 1.35V and has a single port for data transfer. The memory format is DRAM, which stands for Dynamic Random Access Memory, and the write cycle time for a word or page is 15ns. The maximum height when seated is 1.2mm, making it suitable for compact and low-profile applications.
IS43TR82560BL-125KBLI Features
Package / Case: 78-TFBGA
78 Pins
Operating Supply Voltage:1.35V
Additional Feature:AUTO/SELF REFRESH
IS43TR82560BL-125KBLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43TR82560BL-125KBLI Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
The package or case for this particular product is a 78-TFBGA, which stands for Thin Fine Pitch Ball Grid Array. This type of packaging is commonly used for integrated circuits and is known for its compact size and high density. The Moisture Sensitivity Level (MSL) for this product is 3, meaning that it can withstand exposure to moisture for up to 168 hours without any damage. It has a total of 78 terminations, which are the points of connection for the integrated circuit. One of the additional features of this product is AUTO/SELF REFRESH, which allows for automatic refreshing of the memory without any external intervention. The technology used for this product is SDRAM - DDR3L, which stands for Synchronous Dynamic Random Access Memory - Double Data Rate 3 Low Voltage. It operates at a supply voltage of 1.35V and has a single port for data transfer. The memory format is DRAM, which stands for Dynamic Random Access Memory, and the write cycle time for a word or page is 15ns. The maximum height when seated is 1.2mm, making it suitable for compact and low-profile applications.
IS43TR82560BL-125KBLI Features
Package / Case: 78-TFBGA
78 Pins
Operating Supply Voltage:1.35V
Additional Feature:AUTO/SELF REFRESH
IS43TR82560BL-125KBLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43TR82560BL-125KBLI Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
IS43TR82560BL-125KBLI More Descriptions
2G, 1.35V, DDR3L, 256Mx8, 1600MT/s @ 11-11-11, 78 ball BGA (8mm x10.5mm) RoHS, IT
DRAM Chip DDR3 SDRAM 2G-Bit 256M x 8 1.35V 78-Pin TW-BGA
IC DRAM 2GBIT PARALLEL 78TWBGA
DRAM Chip DDR3 SDRAM 2G-Bit 256M x 8 1.35V 78-Pin TW-BGA
IC DRAM 2GBIT PARALLEL 78TWBGA
The three parts on the right have similar specifications to IS43TR82560BL-125KBLI.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsNominal Supply CurrentMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityHeight Seated (Max)LengthRoHS StatusECCN CodeHTS CodePin CountData Bus WidthOutput CharacteristicsStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthRadiation HardeningLead FreeSurface MountPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeMemory DensityWidthView Compare
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IS43TR82560BL-125KBLI8 WeeksSurface MountSurface Mount78-TFBGA78-40°C~95°C TCTrayActive3 (168 Hours)78AUTO/SELF REFRESHSDRAM - DDR3L1.283V~1.45VBOTTOM11.35V0.8mm1.35V1.45V1.283V2Gb 256M x 81160mAVolatileASYNCHRONOUS800MHz20nsDRAMParallel256MX8815ns18b2 Gb1.2mm10.5mmROHS3 Compliant-------------------
-
8 WeeksSurface MountSurface Mount66-TSSOP (0.400, 10.16mm Width)66-40°C~85°C TATrayActive3 (168 Hours)66AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VDUAL12.5V0.65mm2.5V2.7V2.3V256Mb 16M x 161330mAVolatile-200MHz700psDRAMParallel16MX161615ns15b256 Mb1.2mm22.22mmROHS3 CompliantEAR998542.32.00.246616b3-STATE0.004ACOMMON8192248248NoLead Free------
-
8 Weeks-Surface Mount60-TFBGA--40°C~85°C TATrayActive3 (168 Hours)60PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VBOTTOM12.5V1mm-2.7V2.3V512Mb 32M x 161-VolatileSYNCHRONOUS200MHz700psDRAMParallel32MX161615ns--1.2mm13mmROHS3 CompliantEAR99-----------YESNOT SPECIFIEDNOT SPECIFIEDR-PBGA-B60536870912 bit8mm
-
8 Weeks-Surface Mount60-TFBGA--40°C~85°C TATrayActive3 (168 Hours)60PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VBOTTOM12.5V1mm-2.7V2.3V512Mb 32M x 161-VolatileSYNCHRONOUS166MHz700psDRAMParallel32MX161615ns--1.2mm13mmROHS3 CompliantEAR99-----------YESNOT SPECIFIEDNOT SPECIFIEDR-PBGA-B60536870912 bit8mm
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