ISSI, Integrated Silicon Solution Inc IS43TR16256AL-125KBL
- Part Number:
- IS43TR16256AL-125KBL
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3227366-IS43TR16256AL-125KBL
- Description:
- IC SDRAM 4GBIT 800MHZ 96BGA
- ECAD Model:
-
- Datasheet:
- IS4xTR16256A(L), 85120A(L)
ISSI, Integrated Silicon Solution Inc IS43TR16256AL-125KBL technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43TR16256AL-125KBL.
- Factory Lead Time6 Weeks
- Mounting TypeSurface Mount
- Package / Case96-TFBGA
- Surface MountYES
- Number of Pins96
- Operating Temperature0°C~95°C TC
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations96
- Additional FeaturePROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
- TechnologySDRAM - DDR3L
- Voltage - Supply1.283V~1.45V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.35V
- Terminal Pitch0.8mm
- Supply Voltage-Max (Vsup)1.45V
- Supply Voltage-Min (Vsup)1.283V
- Memory Size4Gb 256M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency800MHz
- Access Time20ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width16b
- Organization256MX16
- Memory Width16
- Write Cycle Time - Word, Page15ns
- Height Seated (Max)1.2mm
- Length13mm
- RoHS StatusROHS3 Compliant
IS43TR16256AL-125KBL Overview
The operating temperature range of this particular memory module is quite wide, spanning from 0°C to 95°C. This allows for reliable performance even in extreme temperature conditions. The packaging for this module is in a tray, making it easy to handle and transport. One of the additional features of this module is its programmable CAS latency, which allows for greater flexibility and customization in terms of performance. The technology used in this module is SDRAM - DDR3L, which is known for its high speed and low power consumption. The terminal pitch is 0.8mm, ensuring a secure and stable connection. With an access time of 20ns and a data bus width of 16b, this module can handle large amounts of data efficiently. Its organization is 256MX16, meaning it has a capacity of 256 megabits and a data width of 16 bits. The write cycle time for both word and page is 15ns, making it a fast and efficient option for memory storage.
IS43TR16256AL-125KBL Features
Package / Case: 96-TFBGA
96 Pins
Additional Feature:PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
IS43TR16256AL-125KBL Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
The operating temperature range of this particular memory module is quite wide, spanning from 0°C to 95°C. This allows for reliable performance even in extreme temperature conditions. The packaging for this module is in a tray, making it easy to handle and transport. One of the additional features of this module is its programmable CAS latency, which allows for greater flexibility and customization in terms of performance. The technology used in this module is SDRAM - DDR3L, which is known for its high speed and low power consumption. The terminal pitch is 0.8mm, ensuring a secure and stable connection. With an access time of 20ns and a data bus width of 16b, this module can handle large amounts of data efficiently. Its organization is 256MX16, meaning it has a capacity of 256 megabits and a data width of 16 bits. The write cycle time for both word and page is 15ns, making it a fast and efficient option for memory storage.
IS43TR16256AL-125KBL Features
Package / Case: 96-TFBGA
96 Pins
Additional Feature:PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
IS43TR16256AL-125KBL Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
IS43TR16256AL-125KBL More Descriptions
PowerPC G2_LE Microprocessor IC MPC82xx 1 Core, 32-Bit 400MHz 516-FPBGA (27x27)
512Mx8, 256Mx16 4Gb DDR3 SDRAM | IC DRAM 4G PARALLEL 96TWBGA
DRAM Chip DDR3L SDRAM 4G-Bit 256M X 16 1.35V 96-Pin TWBGA
Surface Mount Tray 256MX16 SDRAM - DDR3L ic memory 800MHz 20ns 13mm 16b
DDR SDRAM, 256Mx16, 1.35V, 8K, BGA-96,RoHSISSI SCT
DDR DRAM, 256MX16, 0.1ns, CMOS, PBGA96
Dram, 256M X 16Bit, Bga-96 Rohs Compliant: Yes
Product Description Demo for Development.
DRAM 4G, 1.35V, 1600Mhz DDR3L SDAM
DRAM, 256M X 16BIT, BGA-96; DRAM Memory Configuration: 256M x 16bit; Memory Case Style: BGA; No. of Pins: 96Pins; IC Interface Type: -; Access Time: -; Page Size: -; Operating Temperature Min: 0°C; Operating Temperature Max: 95°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
512Mx8, 256Mx16 4Gb DDR3 SDRAM | IC DRAM 4G PARALLEL 96TWBGA
DRAM Chip DDR3L SDRAM 4G-Bit 256M X 16 1.35V 96-Pin TWBGA
Surface Mount Tray 256MX16 SDRAM - DDR3L ic memory 800MHz 20ns 13mm 16b
DDR SDRAM, 256Mx16, 1.35V, 8K, BGA-96,RoHSISSI SCT
DDR DRAM, 256MX16, 0.1ns, CMOS, PBGA96
Dram, 256M X 16Bit, Bga-96 Rohs Compliant: Yes
Product Description Demo for Development.
DRAM 4G, 1.35V, 1600Mhz DDR3L SDAM
DRAM, 256M X 16BIT, BGA-96; DRAM Memory Configuration: 256M x 16bit; Memory Case Style: BGA; No. of Pins: 96Pins; IC Interface Type: -; Access Time: -; Page Size: -; Operating Temperature Min: 0°C; Operating Temperature Max: 95°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
The three parts on the right have similar specifications to IS43TR16256AL-125KBL.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationMemory WidthWrite Cycle Time - Word, PageHeight Seated (Max)LengthRoHS StatusMountECCN CodeHTS CodePin CountOperating Supply VoltageNominal Supply CurrentOutput CharacteristicsAddress Bus WidthDensityStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthRadiation HardeningLead FreeQualification StatusPower SuppliesSupply Current-MaxMemory DensityWidthPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeView Compare
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IS43TR16256AL-125KBL6 WeeksSurface Mount96-TFBGAYES960°C~95°C TCTrayActive3 (168 Hours)96PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDR3L1.283V~1.45VBOTTOM11.35V0.8mm1.45V1.283V4Gb 256M x 161VolatileSYNCHRONOUS800MHz20nsDRAMParallel16b256MX161615ns1.2mm13mmROHS3 Compliant------------------------- -
8 WeeksSurface Mount66-TSSOP (0.400, 10.16mm Width)-66-40°C~85°C TATrayActive3 (168 Hours)66AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VDUAL12.5V0.65mm2.7V2.3V256Mb 16M x 161Volatile-200MHz700psDRAMParallel16b16MX161615ns1.2mm22.22mmROHS3 CompliantSurface MountEAR998542.32.00.24662.5V330mA3-STATE15b256 Mb0.004ACOMMON8192248248NoLead Free--------
-
14 WeeksSurface Mount90-LFBGAYES900°C~70°C TATrayActive3 (168 Hours)90AUTO/SELF REFRESHSDRAM - Mobile LPDDR1.7V~1.95VBOTTOM11.8V0.8mm1.95V1.7V64Mb 2M x 321VolatileSYNCHRONOUS166MHz5.5nsDRAMParallel-32MX323215ns1.45mm13mmROHS3 Compliant------3-STATE--0.00002ACOMMON81922481624816--Not Qualified1.8V0.22mA1073741824 bit8mm---
-
8 WeeksSurface Mount60-TFBGAYES--40°C~85°C TATrayActive3 (168 Hours)60PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VBOTTOM12.5V1mm2.7V2.3V512Mb 32M x 161VolatileSYNCHRONOUS200MHz700psDRAMParallel-32MX161615ns1.2mm13mmROHS3 Compliant-EAR99-----------------536870912 bit8mmNOT SPECIFIEDNOT SPECIFIEDR-PBGA-B60
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