ISSI, Integrated Silicon Solution Inc IS43LR32800G-6BLI
- Part Number:
- IS43LR32800G-6BLI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3234754-IS43LR32800G-6BLI
- Description:
- IC SDRAM 256MBIT 166MHZ 90BGA
- Datasheet:
- IS43LR32800G-6BLI
ISSI, Integrated Silicon Solution Inc IS43LR32800G-6BLI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43LR32800G-6BLI.
- Factory Lead Time14 Weeks
- Mounting TypeSurface Mount
- Package / Case90-TFBGA
- Surface MountYES
- Number of Pins90
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations90
- Additional FeatureAUTO/SELF REFRESH
- TechnologySDRAM - Mobile LPDDR
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)1.95V
- Power Supplies1.8V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size256Mb 8M x 32
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency166MHz
- Supply Current-Max0.13mA
- Access Time5.5ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width32b
- Organization8MX32
- Output Characteristics3-STATE
- Memory Width32
- Write Cycle Time - Word, Page15ns
- Standby Current-Max0.00001A
- Memory Density268435456 bit
- I/O TypeCOMMON
- Refresh Cycles4096
- Sequential Burst Length24816
- Interleaved Burst Length24816
- Height Seated (Max)1.2mm
- Length13mm
- RoHS StatusROHS3 Compliant
IS43LR32800G-6BLI Overview
Our product features advanced SDRAM technology with a Mobile LPDDR design, providing high-speed and efficient performance. With a supply voltage of 1.8V, it offers low power consumption and is suitable for mobile devices. The memory size is 256Mb, organized in 8M x 32 configuration, and operates in synchronous mode at a clock frequency of 166MHz. The memory interface is parallel, allowing for fast data transfer. Its organization of 8MX32 and memory width of 32 provide ample storage capacity. Additionally, our product has a standby current-max of 0.00001A, making it energy-efficient. The I/O type is common, ensuring compatibility with various systems. Our product is a reliable and high-quality choice for your memory needs.
IS43LR32800G-6BLI Features
Package / Case: 90-TFBGA
90 Pins
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS43LR32800G-6BLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43LR32800G-6BLI Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
Our product features advanced SDRAM technology with a Mobile LPDDR design, providing high-speed and efficient performance. With a supply voltage of 1.8V, it offers low power consumption and is suitable for mobile devices. The memory size is 256Mb, organized in 8M x 32 configuration, and operates in synchronous mode at a clock frequency of 166MHz. The memory interface is parallel, allowing for fast data transfer. Its organization of 8MX32 and memory width of 32 provide ample storage capacity. Additionally, our product has a standby current-max of 0.00001A, making it energy-efficient. The I/O type is common, ensuring compatibility with various systems. Our product is a reliable and high-quality choice for your memory needs.
IS43LR32800G-6BLI Features
Package / Case: 90-TFBGA
90 Pins
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS43LR32800G-6BLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43LR32800G-6BLI Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
IS43LR32800G-6BLI More Descriptions
Surface Mount Tray 8MX32 SDRAM - Mobile LPDDR ic memory 166MHz 5.5ns 13mm 0.00001A
DRAM Chip Mobile-DDR SDRAM 256Mbit 8Mx32 1.8V 90-Pin TFBGA
IC DRAM 256MBIT PARALLEL 90TFBGA
DRAM 256M, 1.8V, 166Mhz Mobile DDR SDRAM
256M, 1.8V, Mobile Ddr, 8Mx32, 166Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs, It |Integrated Silicon Solution (Issi) IS43LR32800G-6BLI
DRAM Chip Mobile-DDR SDRAM 256Mbit 8Mx32 1.8V 90-Pin TFBGA
IC DRAM 256MBIT PARALLEL 90TFBGA
DRAM 256M, 1.8V, 166Mhz Mobile DDR SDRAM
256M, 1.8V, Mobile Ddr, 8Mx32, 166Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs, It |Integrated Silicon Solution (Issi) IS43LR32800G-6BLI
The three parts on the right have similar specifications to IS43LR32800G-6BLI.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthRoHS StatusMountECCN CodeHTS CodePin CountOperating Supply VoltageNominal Supply CurrentAddress Bus WidthDensityRadiation HardeningLead FreeView Compare
-
IS43LR32800G-6BLI14 WeeksSurface Mount90-TFBGAYES90-40°C~85°C TATrayActive3 (168 Hours)90AUTO/SELF REFRESHSDRAM - Mobile LPDDR1.7V~1.95VBOTTOM11.8V0.8mmNot Qualified1.95V1.8V1.7V256Mb 8M x 321VolatileSYNCHRONOUS166MHz0.13mA5.5nsDRAMParallel32b8MX323-STATE3215ns0.00001A268435456 bitCOMMON409624816248161.2mm13mmROHS3 Compliant-----------
-
-Surface Mount60-TFBGA-600°C~70°C TATrayObsolete3 (168 Hours)60AUTO/SELF REFRESHSDRAM - Mobile LPDDR1.7V~1.95VBOTTOM11.8V0.8mmNot Qualified1.95V-1.7V256Mb 16M x 161VolatileSYNCHRONOUS166MHz-5.5nsDRAMParallel16b16MX163-STATE1615ns0.00001A-COMMON819224816248161.1mm10mmRoHS CompliantSurface MountEAR998542.32.00.24601.8V80mA15b256 Mb--
-
8 WeeksSurface Mount66-TSSOP (0.400, 10.16mm Width)-66-40°C~85°C TATrayActive3 (168 Hours)66AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VDUAL12.5V0.65mm-2.7V-2.3V256Mb 16M x 161Volatile-200MHz-700psDRAMParallel16b16MX163-STATE1615ns0.004A-COMMON81922482481.2mm22.22mmROHS3 CompliantSurface MountEAR998542.32.00.24662.5V330mA15b256 MbNoLead Free
-
8 WeeksSurface Mount84-TFBGA---40°C~85°C TATape & Reel (TR)Active3 (168 Hours)--SDRAM - DDR21.7V~1.9V--------2Gb 128M x 16-Volatile-400MHz-400nsDRAMParallel----15ns--------ROHS3 Compliant----------
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
27 October 2023
A Complete Guide to The BC639 BJT Transistor
Ⅰ. Overview of BC639 transistorⅡ. BC639 transistor symbol, footprint and pin configurationⅢ. Technical parameters of BC639 transistorⅣ. Characteristics of BC639 transistorⅤ. Working principle of BC639 transistorⅥ. Maximum ratings... -
30 October 2023
Car Audio Power Amplifier TDA7388: Equivalents, Features, TPA3116D2 vs TDA7388
Ⅰ. Overview of TDA7388 amplifierⅡ. TDA7388 symbol, footprint and pin configurationⅢ. Technical parameters of TDA7388 amplifierⅣ. What are the features of TDA7388 amplifier?Ⅴ. Differences between TPA3116D2 and TDA7388Ⅵ.... -
30 October 2023
TDA2822 Dual Power Amplifier: Pin Configuration, Applications and Additional Information
Ⅰ. Overview of TDA2822 amplifierⅡ. TDA2822 symbol, footprint and pin configurationⅢ. Technical parameters of TDA2822 amplifierⅣ. Features of TDA2822 amplifierⅤ. How does the TDA2822 amplifier work?Ⅵ. What are... -
31 October 2023
ESP32 vs RP2040 vs STM32: Which is Best for Your Project?
Ⅰ. What is a microcontroller?Ⅱ. ESP32 vs RP2040 vs STM32: OverviewⅢ. ESP32 vs RP2040 vs STM32: ManufacturersⅣ. ESP32 vs RP2040 vs STM32: Pin configurationⅤ. ESP32 vs RP2040 vs...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.