ISSI, Integrated Silicon Solution Inc IS43LR16200D-6BLI
- Part Number:
- IS43LR16200D-6BLI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3233035-IS43LR16200D-6BLI
- Description:
- IC SDRAM 32MBIT 166MHZ 60BGA
- ECAD Model:
-
- Datasheet:
- IS43LR16200D-6BLI
ISSI, Integrated Silicon Solution Inc IS43LR16200D-6BLI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43LR16200D-6BLI.
- Factory Lead Time14 Weeks
- Mounting TypeSurface Mount
- Package / Case60-TFBGA
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations60
- ECCN CodeEAR99
- Additional FeatureAUTO/SELF REFRESH
- TechnologySDRAM - Mobile LPDDR
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBGA-B60
- Supply Voltage-Max (Vsup)1.95V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size32Mb 2M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency166MHz
- Access Time5.5ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization2MX16
- Memory Width16
- Write Cycle Time - Word, Page15ns
- Memory Density33554432 bit
- Height Seated (Max)1.1mm
- Length10mm
- Width8mm
- RoHS StatusROHS3 Compliant
IS43LR16200D-6BLI Overview
The packaging for this product is a tray, which is a convenient and efficient way to transport and store electronic components. The Moisture Sensitivity Level (MSL) for this product is 3, meaning it can withstand up to 168 hours of exposure to moisture before it may be affected. With a total of 60 terminations, this product is designed to handle a high volume of connections. The Peak Reflow Temperature is not specified, but with a terminal pitch of 0.8mm, it is clear that this product is suitable for precise and compact applications. The JESD-30 Code for this product is R-PBGA-B60, indicating that it is a plastic ball grid array with 60 balls. With a minimum supply voltage of 1.7V and a clock frequency of 166MHz, this product is capable of handling high-speed operations. The Write Cycle Time for this product is 15ns, making it a reliable and efficient choice for word and page operations.
IS43LR16200D-6BLI Features
Package / Case: 60-TFBGA
Additional Feature:AUTO/SELF REFRESH
IS43LR16200D-6BLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43LR16200D-6BLI Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
The packaging for this product is a tray, which is a convenient and efficient way to transport and store electronic components. The Moisture Sensitivity Level (MSL) for this product is 3, meaning it can withstand up to 168 hours of exposure to moisture before it may be affected. With a total of 60 terminations, this product is designed to handle a high volume of connections. The Peak Reflow Temperature is not specified, but with a terminal pitch of 0.8mm, it is clear that this product is suitable for precise and compact applications. The JESD-30 Code for this product is R-PBGA-B60, indicating that it is a plastic ball grid array with 60 balls. With a minimum supply voltage of 1.7V and a clock frequency of 166MHz, this product is capable of handling high-speed operations. The Write Cycle Time for this product is 15ns, making it a reliable and efficient choice for word and page operations.
IS43LR16200D-6BLI Features
Package / Case: 60-TFBGA
Additional Feature:AUTO/SELF REFRESH
IS43LR16200D-6BLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43LR16200D-6BLI Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
IS43LR16200D-6BLI More Descriptions
SDRAM - Mobile LPDDR Memory IC 32Mb (2M x 16) Parallel 166 MHz 5.5 ns 60-TFBGA (8x10)
Mobile DDR DRAM 32Mb 2Mx16 166MHz 1.8V 6ns 60-Pin BGA Tray
IC DRAM 32MBIT PARALLEL 60TFBGA
32M, 1.8V, Mobile Ddr, 2Mx16, 166Mhz, 60 Ball Bga (8Mm X 10Mm) Rohs, It |Integrated Silicon Solution (Issi) IS43LR16200D-6BLI
Mobile DDR DRAM 32Mb 2Mx16 166MHz 1.8V 6ns 60-Pin BGA Tray
IC DRAM 32MBIT PARALLEL 60TFBGA
32M, 1.8V, Mobile Ddr, 2Mx16, 166Mhz, 60 Ball Bga (8Mm X 10Mm) Rohs, It |Integrated Silicon Solution (Issi) IS43LR16200D-6BLI
The three parts on the right have similar specifications to IS43LR16200D-6BLI.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityHeight Seated (Max)LengthWidthRoHS StatusMountNumber of PinsHTS CodePin CountQualification StatusOperating Supply VoltageNominal Supply CurrentData Bus WidthOutput CharacteristicsAddress Bus WidthDensityStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthPower SuppliesSupply Current-MaxView Compare
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IS43LR16200D-6BLI14 WeeksSurface Mount60-TFBGAYES-40°C~85°C TATrayActive3 (168 Hours)60EAR99AUTO/SELF REFRESHSDRAM - Mobile LPDDR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V0.8mmNOT SPECIFIEDR-PBGA-B601.95V1.7V32Mb 2M x 161VolatileSYNCHRONOUS166MHz5.5nsDRAMParallel2MX161615ns33554432 bit1.1mm10mm8mmROHS3 Compliant------------------- -
-Surface Mount60-TFBGA-0°C~70°C TATrayObsolete3 (168 Hours)60EAR99AUTO/SELF REFRESHSDRAM - Mobile LPDDR1.7V~1.95VBOTTOM-11.8V0.8mm--1.95V1.7V256Mb 16M x 161VolatileSYNCHRONOUS166MHz5.5nsDRAMParallel16MX161615ns-1.1mm10mm-RoHS CompliantSurface Mount608542.32.00.2460Not Qualified1.8V80mA16b3-STATE15b256 Mb0.00001ACOMMON81922481624816--
-
-Surface Mount84-TFBGAYES0°C~70°C TATape & Reel (TR)Obsolete3 (168 Hours)84-AUTO/SELF REFRESHSDRAM - DDR21.7V~1.9VBOTTOM-11.8V0.8mm--1.9V1.7V256Mb 16M x 161VolatileSYNCHRONOUS333MHz450psDRAMParallel16MX161615ns-1.2mm12.5mm-RoHS Compliant-84--Not Qualified--16b3-STATE--0.005ACOMMON819248481.8V0.33mA
-
8 WeeksSurface Mount60-TFBGAYES-40°C~85°C TATrayActive3 (168 Hours)60EAR99PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VBOTTOMNOT SPECIFIED12.5V1mmNOT SPECIFIEDR-PBGA-B602.7V2.3V512Mb 32M x 161VolatileSYNCHRONOUS200MHz700psDRAMParallel32MX161615ns536870912 bit1.2mm13mm8mmROHS3 Compliant------------------
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