ISSI, Integrated Silicon Solution Inc IS43LR16200C-6BLI
- Part Number:
- IS43LR16200C-6BLI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3245288-IS43LR16200C-6BLI
- Description:
- IC SDRAM 32MBIT 166MHZ 60BGA
- Datasheet:
- IS43LR16200C
ISSI, Integrated Silicon Solution Inc IS43LR16200C-6BLI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43LR16200C-6BLI.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case60-TFBGA
- Number of Pins60
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations60
- ECCN CodeEAR99
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.02
- TechnologySDRAM - Mobile LPDDR
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- Pin Count60
- Operating Supply Voltage1.8V
- Supply Voltage-Max (Vsup)1.95V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size32Mb 2M x 16
- Number of Ports1
- Nominal Supply Current80mA
- Memory TypeVolatile
- Clock Frequency166MHz
- Access Time5.5ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width16b
- Organization2MX16
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page12ns
- Address Bus Width12b
- Density32 Mb
- Standby Current-Max0.00001A
- I/O TypeCOMMON
- Refresh Cycles4096
- Sequential Burst Length24816
- Interleaved Burst Length24816
- Height Seated (Max)1.1mm
- Length10mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
IS43LR16200C-6BLI Overview
The operating temperature range for this particular device is -40°C to 85°C. The voltage supply for this device is between 1.7V to 1.95V. With a pin count of 60, this device is designed to handle a maximum supply voltage of 1.95V. Its memory size is 32Mb, specifically 2M x 16. The memory type is volatile, meaning it requires a constant power source to retain data. The memory format is DRAM, which stands for Dynamic Random Access Memory. This device also has a parallel memory interface and a data bus width of 16 bits. The write cycle time for this device is 12 nanoseconds for both word and page operations.
IS43LR16200C-6BLI Features
Package / Case: 60-TFBGA
60 Pins
Operating Supply Voltage:1.8V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS43LR16200C-6BLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43LR16200C-6BLI Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
The operating temperature range for this particular device is -40°C to 85°C. The voltage supply for this device is between 1.7V to 1.95V. With a pin count of 60, this device is designed to handle a maximum supply voltage of 1.95V. Its memory size is 32Mb, specifically 2M x 16. The memory type is volatile, meaning it requires a constant power source to retain data. The memory format is DRAM, which stands for Dynamic Random Access Memory. This device also has a parallel memory interface and a data bus width of 16 bits. The write cycle time for this device is 12 nanoseconds for both word and page operations.
IS43LR16200C-6BLI Features
Package / Case: 60-TFBGA
60 Pins
Operating Supply Voltage:1.8V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS43LR16200C-6BLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43LR16200C-6BLI Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
IS43LR16200C-6BLI More Descriptions
32M, 1.8V, MDDR, 2Mx16, 166Mhz, 60 ball BGA (8mmx10mm) RoHS, IT
IC DRAM 32MBIT PARALLEL 60TFBGA
IC DDR 32M 166MHZ 60BGA
IC DRAM 32MBIT PARALLEL 60TFBGA
IC DDR 32M 166MHZ 60BGA
The three parts on the right have similar specifications to IS43LR16200C-6BLI.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchPin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsNominal Supply CurrentMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthRadiation HardeningRoHS StatusFactory Lead TimeSurface MountQualification StatusPower SuppliesOperating ModeSupply Current-MaxMemory DensityWidthPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeView Compare
-
IS43LR16200C-6BLISurface MountSurface Mount60-TFBGA60-40°C~85°C TATrayObsolete3 (168 Hours)60EAR99AUTO/SELF REFRESH8542.32.00.02SDRAM - Mobile LPDDR1.7V~1.95VBOTTOM11.8V0.8mm601.8V1.95V1.7V32Mb 2M x 16180mAVolatile166MHz5.5nsDRAMParallel16b2MX163-STATE1612ns12b32 Mb0.00001ACOMMON409624816248161.1mm10mmNoRoHS Compliant------------
-
-Surface Mount90-LFBGA900°C~70°C TATrayActive3 (168 Hours)90-AUTO/SELF REFRESH-SDRAM - Mobile LPDDR1.7V~1.95VBOTTOM11.8V0.8mm--1.95V1.7V64Mb 2M x 321-Volatile166MHz5.5nsDRAMParallel-32MX323-STATE3215ns--0.00002ACOMMON819224816248161.45mm13mm-ROHS3 Compliant14 WeeksYESNot Qualified1.8VSYNCHRONOUS0.22mA1073741824 bit8mm---
-
-Surface Mount60-TFBGA--40°C~85°C TATape & Reel (TR)Active3 (168 Hours)----SDRAM - DDR21.7V~1.9V--------2Gb 256M x 8--Volatile333MHz450psDRAMParallel----15ns----------ROHS3 Compliant8 Weeks----------
-
-Surface Mount60-TFBGA--40°C~85°C TATrayActive3 (168 Hours)60EAR99PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH-SDRAM - DDR2.3V~2.7VBOTTOM12.5V1mm--2.7V2.3V512Mb 32M x 161-Volatile200MHz700psDRAMParallel-32MX16-1615ns-------1.2mm13mm-ROHS3 Compliant8 WeeksYES--SYNCHRONOUS-536870912 bit8mmNOT SPECIFIEDNOT SPECIFIEDR-PBGA-B60
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