ISSI, Integrated Silicon Solution Inc IS43DR82560C-3DBL
- Part Number:
- IS43DR82560C-3DBL
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3228742-IS43DR82560C-3DBL
- Description:
- IC SDRAM 2GBIT 333MHZ 60BGA
- Datasheet:
- IS43DR82560C-3DBL
ISSI, Integrated Silicon Solution Inc IS43DR82560C-3DBL technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43DR82560C-3DBL.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case60-TFBGA
- Surface MountYES
- Operating Temperature0°C~85°C TC
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations60
- ECCN CodeEAR99
- Additional FeaturePROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
- TechnologySDRAM - DDR2
- Voltage - Supply1.7V~1.9V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- JESD-30 CodeR-PBGA-B60
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)1.9V
- Power Supplies1.8V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size2Gb 256M x 8
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency333MHz
- Supply Current-Max0.455mA
- Access Time450ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization256MX8
- Output Characteristics3-STATE
- Memory Width8
- Write Cycle Time - Word, Page15ns
- Standby Current-Max0.03A
- Memory Density2147483648 bit
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length48
- Interleaved Burst Length48
- Height Seated (Max)1.2mm
- Length10.5mm
- Width8mm
- RoHS StatusROHS3 Compliant
IS43DR82560C-3DBL Overview
The package or case for this particular component is a 60-TFBGA, which stands for Thin Fine Ball Grid Array. It is typically packaged in a tray, which is a convenient way to store and transport multiple units. The Moisture Sensitivity Level (MSL) for this component is 3, meaning it can withstand exposure to moisture for up to 168 hours before being affected. The terminal position is located on the bottom of the package, as indicated by the JESD-30 Code of R-PBGA-B60. Currently, this component has not yet been qualified, but it operates in synchronous mode with a maximum supply current of 0.455mA. It can perform 8192 refresh cycles and has an interleaved burst length of 48.
IS43DR82560C-3DBL Features
Package / Case: 60-TFBGA
Additional Feature:PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
I/O Type: COMMON
IS43DR82560C-3DBL Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43DR82560C-3DBL Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
The package or case for this particular component is a 60-TFBGA, which stands for Thin Fine Ball Grid Array. It is typically packaged in a tray, which is a convenient way to store and transport multiple units. The Moisture Sensitivity Level (MSL) for this component is 3, meaning it can withstand exposure to moisture for up to 168 hours before being affected. The terminal position is located on the bottom of the package, as indicated by the JESD-30 Code of R-PBGA-B60. Currently, this component has not yet been qualified, but it operates in synchronous mode with a maximum supply current of 0.455mA. It can perform 8192 refresh cycles and has an interleaved burst length of 48.
IS43DR82560C-3DBL Features
Package / Case: 60-TFBGA
Additional Feature:PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
I/O Type: COMMON
IS43DR82560C-3DBL Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43DR82560C-3DBL Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
IS43DR82560C-3DBL More Descriptions
DRAM Chip DDR2 SDRAM 2Gbit 256M X 8 1.8V 60-Pin TWBGA Tray
EAR99 Surface Mount Tray 256MX8 ic memory 333MHz 450ps 8mm 0.03A
DDR SDRAM, 256Mx8, 1.8V, 8K, BGA-60,RoHSISSI SCT
IC DRAM 2GBIT PARALLEL 60TWBGA
2G, 1.8V, Ddr2, 256Mx8, 333Mhz @ Cl5, 60 Ball Bga (8Mm X 10.5Mm) Rohs |Integrated Silicon Solution (Issi) IS43DR82560C-3DBL
EAR99 Surface Mount Tray 256MX8 ic memory 333MHz 450ps 8mm 0.03A
DDR SDRAM, 256Mx8, 1.8V, 8K, BGA-60,RoHSISSI SCT
IC DRAM 2GBIT PARALLEL 60TWBGA
2G, 1.8V, Ddr2, 256Mx8, 333Mhz @ Cl5, 60 Ball Bga (8Mm X 10.5Mm) Rohs |Integrated Silicon Solution (Issi) IS43DR82560C-3DBL
The three parts on the right have similar specifications to IS43DR82560C-3DBL.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthWidthRoHS StatusMountNumber of PinsHTS CodePin CountOperating Supply VoltageNominal Supply CurrentData Bus WidthAddress Bus WidthDensityRadiation HardeningLead FreeView Compare
-
IS43DR82560C-3DBL8 WeeksSurface Mount60-TFBGAYES0°C~85°C TCTrayActive3 (168 Hours)60EAR99PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDR21.7V~1.9VBOTTOM11.8V0.8mmR-PBGA-B60Not Qualified1.9V1.8V1.7V2Gb 256M x 81VolatileSYNCHRONOUS333MHz0.455mA450psDRAMParallel256MX83-STATE815ns0.03A2147483648 bitCOMMON819248481.2mm10.5mm8mmROHS3 Compliant------------
-
-Surface Mount60-TFBGA-0°C~70°C TATrayObsolete3 (168 Hours)60EAR99AUTO/SELF REFRESHSDRAM - Mobile LPDDR1.7V~1.95VBOTTOM11.8V0.8mm-Not Qualified1.95V-1.7V256Mb 16M x 161VolatileSYNCHRONOUS166MHz-5.5nsDRAMParallel16MX163-STATE1615ns0.00001A-COMMON819224816248161.1mm10mm-RoHS CompliantSurface Mount608542.32.00.24601.8V80mA16b15b256 Mb--
-
8 WeeksSurface Mount66-TSSOP (0.400, 10.16mm Width)--40°C~85°C TATrayActive3 (168 Hours)66EAR99AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VDUAL12.5V0.65mm--2.7V-2.3V256Mb 16M x 161Volatile-200MHz-700psDRAMParallel16MX163-STATE1615ns0.004A-COMMON81922482481.2mm22.22mm-ROHS3 CompliantSurface Mount668542.32.00.24662.5V330mA16b15b256 MbNoLead Free
-
8 WeeksSurface Mount60-TFBGA--40°C~85°C TATape & Reel (TR)Active3 (168 Hours)---SDRAM - DDR21.7V~1.9V---------2Gb 256M x 8-Volatile-333MHz-450psDRAMParallel---15ns---------ROHS3 Compliant-----------
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