ISSI, Integrated Silicon Solution Inc IS43DR16640B-3DBL-TR
- Part Number:
- IS43DR16640B-3DBL-TR
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3232970-IS43DR16640B-3DBL-TR
- Description:
- IC SDRAM 1GBIT 333MHZ 84BGA
- Datasheet:
- IS4xDR81280B(L), IS4xDR16640B(L)
ISSI, Integrated Silicon Solution Inc IS43DR16640B-3DBL-TR technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43DR16640B-3DBL-TR.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case84-TFBGA
- Surface MountYES
- Number of Pins84
- Operating Temperature0°C~70°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations84
- TechnologySDRAM - DDR2
- Voltage - Supply1.7V~1.9V
- Terminal PositionBOTTOM
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- Qualification StatusNot Qualified
- Power Supplies1.8V
- Memory Size1Gb 64M x 16
- Memory TypeVolatile
- Clock Frequency333MHz
- Supply Current-Max0.25mA
- Access Time450ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width16b
- Organization64MX16
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page15ns
- Standby Current-Max0.015A
- Memory Density1073741824 bit
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length48
- Interleaved Burst Length48
- RoHS StatusROHS3 Compliant
IS43DR16640B-3DBL-TR Overview
The active part status of the SDRAM - DDR2 technology with a supply voltage of 1.8V and a memory size of 1Gb 64M x 16 makes it a highly sought-after component in the electronics industry. With a moisture sensitivity level of 3 (168 hours), this device can withstand moderate levels of humidity without compromising its performance. The 84 pins provide a secure and stable connection, ensuring reliable data transfer. The organization of 64MX16 and a memory width of 16 allow for efficient data storage and retrieval. Additionally, the refresh cycles of 8192 ensure that the memory remains updated and accurate, making it an essential component in various electronic devices.
IS43DR16640B-3DBL-TR Features
Package / Case: 84-TFBGA
84 Pins
I/O Type: COMMON
IS43DR16640B-3DBL-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43DR16640B-3DBL-TR Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
The active part status of the SDRAM - DDR2 technology with a supply voltage of 1.8V and a memory size of 1Gb 64M x 16 makes it a highly sought-after component in the electronics industry. With a moisture sensitivity level of 3 (168 hours), this device can withstand moderate levels of humidity without compromising its performance. The 84 pins provide a secure and stable connection, ensuring reliable data transfer. The organization of 64MX16 and a memory width of 16 allow for efficient data storage and retrieval. Additionally, the refresh cycles of 8192 ensure that the memory remains updated and accurate, making it an essential component in various electronic devices.
IS43DR16640B-3DBL-TR Features
Package / Case: 84-TFBGA
84 Pins
I/O Type: COMMON
IS43DR16640B-3DBL-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43DR16640B-3DBL-TR Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
IS43DR16640B-3DBL-TR More Descriptions
DRAM Chip DDR2 SDRAM 1G-Bit 64M X 16 1.8V 84-Pin TWBGA T/R
IC DRAM 1GBIT PARALLEL 84TWBGA
DRAM 1G (64Mx16) 333MHz DDR2 1.8v
1G, 1.8V, Ddr2, 64Mx16, 333Mhz @ Cl5, 84 Ball Bga (8Mm X 12.5Mm) Rohs, T&r |Integrated Silicon Solution (Issi) IS43DR16640B-3DBL-TR
IC DRAM 1GBIT PARALLEL 84TWBGA
DRAM 1G (64Mx16) 333MHz DDR2 1.8v
1G, 1.8V, Ddr2, 64Mx16, 333Mhz @ Cl5, 84 Ball Bga (8Mm X 12.5Mm) Rohs, T&r |Integrated Silicon Solution (Issi) IS43DR16640B-3DBL-TR
The three parts on the right have similar specifications to IS43DR16640B-3DBL-TR.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionSupply VoltageTerminal PitchQualification StatusPower SuppliesMemory SizeMemory TypeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthRoHS StatusAdditional FeatureNumber of FunctionsSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Number of PortsOperating ModeLengthHeight Seated (Max)WidthECCN CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeView Compare
-
IS43DR16640B-3DBL-TR8 WeeksSurface Mount84-TFBGAYES840°C~70°C TATape & Reel (TR)Active3 (168 Hours)84SDRAM - DDR21.7V~1.9VBOTTOM1.8V0.8mmNot Qualified1.8V1Gb 64M x 16Volatile333MHz0.25mA450psDRAMParallel16b64MX163-STATE1615ns0.015A1073741824 bitCOMMON81924848ROHS3 Compliant--------------
-
14 WeeksSurface Mount90-LFBGAYES900°C~70°C TATrayActive3 (168 Hours)90SDRAM - Mobile LPDDR1.7V~1.95VBOTTOM1.8V0.8mmNot Qualified1.8V64Mb 2M x 32Volatile166MHz0.22mA5.5nsDRAMParallel-32MX323-STATE3215ns0.00002A1073741824 bitCOMMON81922481624816ROHS3 CompliantAUTO/SELF REFRESH11.95V1.7V1SYNCHRONOUS13mm1.45mm8mm----
-
8 WeeksSurface Mount60-TFBGA---40°C~85°C TATape & Reel (TR)Active3 (168 Hours)-SDRAM - DDR21.7V~1.9V-----2Gb 256M x 8Volatile333MHz-450psDRAMParallel----15ns------ROHS3 Compliant-------------
-
8 WeeksSurface Mount60-TFBGAYES--40°C~85°C TATrayActive3 (168 Hours)60SDRAM - DDR2.3V~2.7VBOTTOM2.5V1mm--512Mb 32M x 16Volatile200MHz-700psDRAMParallel-32MX16-1615ns-536870912 bit----ROHS3 CompliantPROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH12.7V2.3V1SYNCHRONOUS13mm1.2mm8mmEAR99NOT SPECIFIEDNOT SPECIFIEDR-PBGA-B60
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
22 September 2023
Power Transistor IC LM317LZ: Symbol, Features and Package
Ⅰ. Overview of LM317LZⅡ. Symbol and Footprint of LM317LZⅢ. Technical parametersⅣ. Features of LM317LZⅤ. Pins and package of LM317LZⅥ. Advantages and disadvantages of LM317LZⅦ. How to optimize the... -
22 September 2023
LM301AN Operational Amplifier: Equivalent, Circuit and Package
Ⅰ. What is LM301AN?Ⅱ. Symbol, footprint and pin connection of LM301ANⅢ. Technical parametersⅣ. LM301AN tone control circuitⅤ. Features of LM301ANⅥ. What is the difference between LM301AN and LM709?Ⅶ.... -
25 September 2023
Get to Know the IRFB7545PBF Power MOSFET
Ⅰ. What is IRFB7545PBF?Ⅱ. Symbol and Footprint of IRFB7545PBFⅢ. Technical parametersⅣ. Features of IRFB7545PBFⅤ. Pinout and package of IRFB7545PBFⅥ. Application of IRFB7545PBFⅦ. How to use IRFB7545PBF?Ⅷ. How to... -
25 September 2023
A Comparison of 2N7000 and BS170 N-Channel Mosfet Transistors
Ⅰ. What is a MOS field effect transistor?Ⅱ. Overview of 2N7000Ⅲ. Overview of BS170Ⅳ. 2N7000 vs BS170: PCB footprintsⅤ. 2N7000 vs BS170: Technical parametersⅥ. 2N7000 vs BS170: FeaturesⅦ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.