ISSI, Integrated Silicon Solution Inc IS43DR16128C-3DBL
- Part Number:
- IS43DR16128C-3DBL
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3228717-IS43DR16128C-3DBL
- Description:
- IC SDRAM 2GBIT 333MHZ 84BGA
- Datasheet:
- IS43DR16128C-3DBL
ISSI, Integrated Silicon Solution Inc IS43DR16128C-3DBL technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43DR16128C-3DBL.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case84-TFBGA
- Surface MountYES
- Operating Temperature0°C~85°C TC
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations84
- ECCN CodeEAR99
- Additional FeaturePROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
- TechnologySDRAM - DDR2
- Voltage - Supply1.7V~1.9V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- JESD-30 CodeR-PBGA-B84
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)1.9V
- Power Supplies1.8V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size2Gb 128M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency333MHz
- Supply Current-Max0.485mA
- Access Time450ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization128MX16
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page15ns
- Standby Current-Max0.03A
- Memory Density2147483648 bit
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length48
- Interleaved Burst Length48
- Height Seated (Max)1.2mm
- Length12.5mm
- Width8mm
- RoHS StatusROHS3 Compliant
IS43DR16128C-3DBL Overview
The package or case for this product is 84-TFBGA and it utilizes SDRAM - DDR2 technology. It has 1 function and is classified under JESD-30 Code R-PBGA-B84. Currently, it is not qualified for use. This product has 1 port and a maximum supply current of 0.485mA. The output characteristics are 3-STATE and it requires 8192 refresh cycles. The product has a width of 8mm.
IS43DR16128C-3DBL Features
Package / Case: 84-TFBGA
Additional Feature:PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
I/O Type: COMMON
IS43DR16128C-3DBL Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43DR16128C-3DBL Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
The package or case for this product is 84-TFBGA and it utilizes SDRAM - DDR2 technology. It has 1 function and is classified under JESD-30 Code R-PBGA-B84. Currently, it is not qualified for use. This product has 1 port and a maximum supply current of 0.485mA. The output characteristics are 3-STATE and it requires 8192 refresh cycles. The product has a width of 8mm.
IS43DR16128C-3DBL Features
Package / Case: 84-TFBGA
Additional Feature:PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
I/O Type: COMMON
IS43DR16128C-3DBL Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43DR16128C-3DBL Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
IS43DR16128C-3DBL More Descriptions
DRAM Chip DDR2 SDRAM 2Gbit 128Mx16 1.8V 84-Pin TW-BGA
EAR99 Surface Mount Tray 128MX16 ic memory 333MHz 450ps 8mm 0.03A
DDR SDRAM, 128Mx16, 1.8V, 8K, BGA-84,RoHSISSI SCT
IC DRAM 2GBIT PARALLEL 84TWBGA
DRAM DDR2,2G,1.8V, RoHs 333MHz,128Mx16
2G, 1.8V, Ddr2, 128Mx16, 333Mhz @ Cl5, 84 Ball Bga (8Mm X 12.5Mm) Rohs |Integrated Silicon Solution (Issi) IS43DR16128C-3DBL
EAR99 Surface Mount Tray 128MX16 ic memory 333MHz 450ps 8mm 0.03A
DDR SDRAM, 128Mx16, 1.8V, 8K, BGA-84,RoHSISSI SCT
IC DRAM 2GBIT PARALLEL 84TWBGA
DRAM DDR2,2G,1.8V, RoHs 333MHz,128Mx16
2G, 1.8V, Ddr2, 128Mx16, 333Mhz @ Cl5, 84 Ball Bga (8Mm X 12.5Mm) Rohs |Integrated Silicon Solution (Issi) IS43DR16128C-3DBL
The three parts on the right have similar specifications to IS43DR16128C-3DBL.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthWidthRoHS StatusPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)View Compare
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IS43DR16128C-3DBL8 WeeksSurface Mount84-TFBGAYES0°C~85°C TCTrayActive3 (168 Hours)84EAR99PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDR21.7V~1.9VBOTTOM11.8V0.8mmR-PBGA-B84Not Qualified1.9V1.8V1.7V2Gb 128M x 161VolatileSYNCHRONOUS333MHz0.485mA450psDRAMParallel128MX163-STATE1615ns0.03A2147483648 bitCOMMON819248481.2mm12.5mm8mmROHS3 Compliant---
-
8 WeeksSurface Mount60-TFBGA--40°C~85°C TATape & Reel (TR)Active3 (168 Hours)---SDRAM - DDR21.7V~1.9V---------2Gb 256M x 8-Volatile-400MHz-400psDRAMParallel---15ns---------ROHS3 Compliant--
-
8 WeeksSurface Mount60-TFBGA--40°C~85°C TATape & Reel (TR)Active3 (168 Hours)---SDRAM - DDR21.7V~1.9V---------2Gb 256M x 8-Volatile-333MHz-450psDRAMParallel---15ns---------ROHS3 Compliant--
-
8 WeeksSurface Mount60-TFBGAYES-40°C~85°C TATrayActive3 (168 Hours)60EAR99PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VBOTTOM12.5V1mmR-PBGA-B60-2.7V-2.3V512Mb 32M x 161VolatileSYNCHRONOUS166MHz-700psDRAMParallel32MX16-1615ns-536870912 bit----1.2mm13mm8mmROHS3 CompliantNOT SPECIFIEDNOT SPECIFIED
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