ISSI, Integrated Silicon Solution Inc IS43DR16128B-3DBLI
- Part Number:
- IS43DR16128B-3DBLI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3236010-IS43DR16128B-3DBLI
- Description:
- IC SDRAM 2GBIT 333MHZ 84BGA
- Datasheet:
- IS43DR16128B-3DBLI
ISSI, Integrated Silicon Solution Inc IS43DR16128B-3DBLI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43DR16128B-3DBLI.
- Mounting TypeSurface Mount
- Package / Case84-TFBGA
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations84
- ECCN CodeEAR99
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.36
- TechnologySDRAM - DDR2
- Voltage - Supply1.7V~1.9V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- JESD-30 CodeR-PBGA-B84
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)1.9V
- Power Supplies1.8V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size2Gb 128M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency333MHz
- Supply Current-Max0.485mA
- Access Time450ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization128MX16
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page15ns
- Standby Current-Max0.03A
- Memory Density2147483648 bit
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length48
- Interleaved Burst Length48
- Height Seated (Max)1.2mm
- Length13.5mm
- Width10.5mm
- RoHS StatusROHS3 Compliant
IS43DR16128B-3DBLI Overview
The HTS Code 8542.32.00.36 is a specific code used to classify electronic components, particularly those with a voltage supply range of 1.7V~1.9V. This particular component has one main function and requires a supply voltage of 1.8V, with a maximum supply voltage of 1.9V. The supply current for this component is limited to 0.485mA. It also has a parallel memory interface and 3-STATE output characteristics. The write cycle time for this component, specifically for words and pages, is 15ns. Additionally, it has an interleaved burst length of 48, which allows for efficient data transfer. These specifications make this component suitable for various electronic applications.
IS43DR16128B-3DBLI Features
Package / Case: 84-TFBGA
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS43DR16128B-3DBLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43DR16128B-3DBLI Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
The HTS Code 8542.32.00.36 is a specific code used to classify electronic components, particularly those with a voltage supply range of 1.7V~1.9V. This particular component has one main function and requires a supply voltage of 1.8V, with a maximum supply voltage of 1.9V. The supply current for this component is limited to 0.485mA. It also has a parallel memory interface and 3-STATE output characteristics. The write cycle time for this component, specifically for words and pages, is 15ns. Additionally, it has an interleaved burst length of 48, which allows for efficient data transfer. These specifications make this component suitable for various electronic applications.
IS43DR16128B-3DBLI Features
Package / Case: 84-TFBGA
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS43DR16128B-3DBLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43DR16128B-3DBLI Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
IS43DR16128B-3DBLI More Descriptions
2G, 1.8V, DDR2, 128Mx16, 333Mhz @ CL5, 84 ball BGA (10.5mmx13.5mm) RoHS, IT
DRAM Chip DDR2 SDRAM 2Gbit 128Mx16 1.8V 84-Pin TW-BGA
EAR99 Surface Mount Tray 128MX16 ic memory 333MHz 450ps 10.5mm 0.03A
IC DRAM 2GBIT PARALLEL 84TWBGA
DRAM Chip DDR2 SDRAM 2Gbit 128Mx16 1.8V 84-Pin TW-BGA
EAR99 Surface Mount Tray 128MX16 ic memory 333MHz 450ps 10.5mm 0.03A
IC DRAM 2GBIT PARALLEL 84TWBGA
The three parts on the right have similar specifications to IS43DR16128B-3DBLI.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthWidthRoHS StatusNumber of PinsData Bus WidthFactory Lead TimeView Compare
-
IS43DR16128B-3DBLISurface Mount84-TFBGAYES-40°C~85°C TATrayActive3 (168 Hours)84EAR99AUTO/SELF REFRESH8542.32.00.36SDRAM - DDR21.7V~1.9VBOTTOM11.8V0.8mmR-PBGA-B84Not Qualified1.9V1.8V1.7V2Gb 128M x 161VolatileSYNCHRONOUS333MHz0.485mA450psDRAMParallel128MX163-STATE1615ns0.03A2147483648 bitCOMMON819248481.2mm13.5mm10.5mmROHS3 Compliant----
-
Surface Mount84-TFBGAYES0°C~70°C TATape & Reel (TR)Obsolete3 (168 Hours)84-AUTO/SELF REFRESH-SDRAM - DDR21.7V~1.9VBOTTOM11.8V0.8mm-Not Qualified1.9V1.8V1.7V256Mb 16M x 161VolatileSYNCHRONOUS333MHz0.33mA450psDRAMParallel16MX163-STATE1615ns0.005A-COMMON819248481.2mm12.5mm-RoHS Compliant8416b-
-
Surface Mount60-TFBGA--40°C~85°C TATape & Reel (TR)Active3 (168 Hours)----SDRAM - DDR21.7V~1.9V---------2Gb 256M x 8-Volatile-400MHz-400psDRAMParallel---15ns---------ROHS3 Compliant--8 Weeks
-
Surface Mount84-TFBGA--40°C~85°C TATape & Reel (TR)Active3 (168 Hours)----SDRAM - DDR21.7V~1.9V---------2Gb 128M x 16-Volatile-400MHz-400nsDRAMParallel---15ns---------ROHS3 Compliant--8 Weeks
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