ISSI, Integrated Silicon Solution Inc IS42SM32400G-75BI
- Part Number:
- IS42SM32400G-75BI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3245878-IS42SM32400G-75BI
- Description:
- IC SDRAM 128MBIT 133MHZ 90BGA
- Datasheet:
- IS42xM32400G, IS45xM32400G
ISSI, Integrated Silicon Solution Inc IS42SM32400G-75BI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS42SM32400G-75BI.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case90-TFBGA
- Number of Pins90
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations90
- ECCN CodeEAR99
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.02
- TechnologySDRAM - Mobile
- Voltage - Supply3V~3.6V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.8mm
- Pin Count90
- Operating Supply Voltage2.5V
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size128Mb 4M x 32
- Number of Ports1
- Nominal Supply Current70mA
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Access Time6ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization4MX32
- Memory Width32
- Address Bus Width14b
- Density128 Mb
- Max Frequency133MHz
- Height Seated (Max)1.2mm
- Length13mm
- RoHS StatusROHS3 Compliant
IS42SM32400G-75BI Overview
One of the additional features of this product is the AUTO/SELF REFRESH function. This feature is particularly useful in the mobile technology industry, as it allows for efficient and automatic refreshing of the memory. The HTS Code for this product is 8542.32.00.02, indicating its classification as a dynamic random access memory (DRAM). The specific technology used in this product is SDRAM, which stands for synchronous dynamic random access memory. The voltage supply for this product ranges from 3V to 3.6V, with a supply voltage of 3.3V and an operating supply voltage of 2.5V. It operates in synchronous mode and has a single function. The memory format for this product is DRAM and it is also compliant with the RoHS3 standards.
IS42SM32400G-75BI Features
Package / Case: 90-TFBGA
90 Pins
Operating Supply Voltage:2.5V
Additional Feature:AUTO/SELF REFRESH
IS42SM32400G-75BI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS42SM32400G-75BI Memory applications.
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
One of the additional features of this product is the AUTO/SELF REFRESH function. This feature is particularly useful in the mobile technology industry, as it allows for efficient and automatic refreshing of the memory. The HTS Code for this product is 8542.32.00.02, indicating its classification as a dynamic random access memory (DRAM). The specific technology used in this product is SDRAM, which stands for synchronous dynamic random access memory. The voltage supply for this product ranges from 3V to 3.6V, with a supply voltage of 3.3V and an operating supply voltage of 2.5V. It operates in synchronous mode and has a single function. The memory format for this product is DRAM and it is also compliant with the RoHS3 standards.
IS42SM32400G-75BI Features
Package / Case: 90-TFBGA
90 Pins
Operating Supply Voltage:2.5V
Additional Feature:AUTO/SELF REFRESH
IS42SM32400G-75BI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS42SM32400G-75BI Memory applications.
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
IS42SM32400G-75BI More Descriptions
DRAM Chip Mobile SDRAM 128M-Bit 4Mx32 2.5V 90-Pin TFBGA
IC DRAM 128MBIT PARALLEL 90TFBGA
IC DRAM 128MBIT PARALLEL 90TFBGA
The three parts on the right have similar specifications to IS42SM32400G-75BI.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchPin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsNominal Supply CurrentMemory TypeOperating ModeAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthAddress Bus WidthDensityMax FrequencyHeight Seated (Max)LengthRoHS StatusSurface MountJESD-609 CodePbfree CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusPower SuppliesClock FrequencySupply Current-MaxData Bus WidthStandby Current-MaxMemory DensityI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthOutput CharacteristicsRadiation HardeningSupplier Device PackageMax Operating TemperatureMin Operating TemperatureFrequencyInterfaceMax Supply VoltageMin Supply VoltageView Compare
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IS42SM32400G-75BISurface MountSurface Mount90-TFBGA90-40°C~85°C TATrayDiscontinued3 (168 Hours)90EAR99AUTO/SELF REFRESH8542.32.00.02SDRAM - Mobile3V~3.6VBOTTOM13.3V0.8mm902.5V3.6V2.7V128Mb 4M x 32170mAVolatileSYNCHRONOUS6nsDRAMParallel4MX323214b128 Mb133MHz1.2mm13mmROHS3 Compliant---------------------------
-
-Surface Mount90-TFBGA90-40°C~85°C TATrayObsolete3 (168 Hours)90EAR99AUTO/SELF REFRESH8542.32.00.24SDRAM3V~3.6VBOTTOM13.3V0.8mm90-3.6V3V256Mb 8M x 321-VolatileSYNCHRONOUS5.5nsDRAMParallel8MX3232---1.2mm13mmNon-RoHS CompliantYESe0noTin/Lead (Sn/Pb)NOT SPECIFIEDNOT SPECIFIEDNot Qualified3.3V133MHz0.285mA32b0.003A268435456 bitCOMMON40961248FP1248---------
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Surface MountSurface Mount50-TSOP (0.400, 10.16mm Width)50-40°C~85°C TATrayObsolete3 (168 Hours)50EAR99AUTO/SELF REFRESH8542.32.00.02SDRAM3V~3.6VDUAL13.3V0.8mm503.3V3.6V3V16Mb 1M x 161110mAVolatile-5.5nsDRAMParallel1MX161612b16 Mb-1.2mm20.95mmRoHS Compliant-e3yesMATTE TIN26040--166MHz-16b0.002A-COMMON20481248FP12483-STATENo-------
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-Surface Mount90-TFBGA900°C~70°C TATape & Reel (TR)Obsolete2 (1 Year)----SDRAM3V~3.6V--------256Mb 8M x 32--Volatile-5.5nsDRAMParallel----166MHz--RoHS Compliant--------166MHz-32b--------90-TFBGA (8x13)70°C0°C166MHzParallel3.6V3V
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