IRLR3802TRPBF

Infineon Technologies IRLR3802TRPBF

Part Number:
IRLR3802TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
4539002-IRLR3802TRPBF
Description:
MOSFET N-CH 12V 84A DPAK
ECAD Model:
Datasheet:
IRLR3802TRPBF

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Specifications
Infineon Technologies IRLR3802TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR3802TRPBF.
  • Factory Lead Time
    10 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2004
  • JESD-609 Code
    e3
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    88W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    88W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8.5m Ω @ 15A, 4.5V
  • Vgs(th) (Max) @ Id
    1.9V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2490pF @ 6V
  • Current - Continuous Drain (Id) @ 25°C
    84A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    41nC @ 5V
  • Rise Time
    14ns
  • Drive Voltage (Max Rds On,Min Rds On)
    2.8V 4.5V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    17 ns
  • Turn-Off Delay Time
    21 ns
  • Continuous Drain Current (ID)
    84A
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    12V
  • Height
    2.3876mm
  • Length
    6.7056mm
  • Width
    6.22mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
IRLR3802TRPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2490pF @ 6V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 12V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 12V.As a result of its turn-off delay time, which is 21 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 11 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.In addition to reducing power consumption, this device uses drive voltage (2.8V 4.5V).

IRLR3802TRPBF Features
a continuous drain current (ID) of 84A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 21 ns


IRLR3802TRPBF Applications
There are a lot of Infineon Technologies
IRLR3802TRPBF applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRLR3802TRPBF More Descriptions
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
MOSFET, 12V, 84A, 8.5 MOHM, 27 NC QG, LOGIC LEVEL, D-PAK
12V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Product Comparison
The three parts on the right have similar specifications to IRLR3802TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Resistance
    Additional Feature
    Voltage - Rated DC
    Current Rating
    Threshold Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Recovery Time
    Nominal Vgs
    REACH SVHC
    Lead Free
    Surface Mount
    Pbfree Code
    Terminal Position
    Reach Compliance Code
    Pin Count
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    View Compare
  • IRLR3802TRPBF
    IRLR3802TRPBF
    10 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    e3
    Not For New Designs
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    R-PSSO-G2
    1
    88W Tc
    Single
    ENHANCEMENT MODE
    88W
    DRAIN
    11 ns
    N-Channel
    SWITCHING
    8.5m Ω @ 15A, 4.5V
    1.9V @ 250μA
    2490pF @ 6V
    84A Tc
    41nC @ 5V
    14ns
    2.8V 4.5V
    ±12V
    17 ns
    21 ns
    84A
    TO-252AA
    12V
    12V
    2.3876mm
    6.7056mm
    6.22mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLR2703PBF
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2003
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    R-PSSO-G2
    1
    45W Tc
    Single
    ENHANCEMENT MODE
    38W
    DRAIN
    8.5 ns
    N-Channel
    SWITCHING
    45m Ω @ 14A, 10V
    1V @ 250μA
    450pF @ 25V
    23A Tc
    15nC @ 4.5V
    140ns
    4V 10V
    ±16V
    20 ns
    12 ns
    23A
    TO-252AA
    16V
    30V
    2.39mm
    6.73mm
    6.22mm
    No
    ROHS3 Compliant
    45mOhm
    AVALANCHE RATED
    30V
    23A
    1V
    96A
    30V
    77 mJ
    97 ns
    1 V
    No SVHC
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLR3105PBF
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2008
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    R-PSSO-G2
    1
    57W Tc
    Single
    ENHANCEMENT MODE
    57W
    DRAIN
    8 ns
    N-Channel
    SWITCHING
    37m Ω @ 15A, 10V
    3V @ 250μA
    710pF @ 25V
    25A Tc
    20nC @ 5V
    57ns
    5V 10V
    ±16V
    37 ns
    25 ns
    25A
    TO-252AA
    16V
    55V
    2.39mm
    6.73mm
    6.223mm
    No
    ROHS3 Compliant
    37mOhm
    AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
    55V
    25A
    3V
    -
    55V
    -
    -
    3 V
    No SVHC
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLR130ATM
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    -
    e3
    Obsolete
    1 (Unlimited)
    2
    -
    MATTE TIN
    -
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSSO-G2
    1
    2.5W Ta 46W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    120m Ω @ 6.5A, 5V
    2V @ 250μA
    755pF @ 25V
    13A Tc
    24nC @ 5V
    -
    5V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    45A
    -
    225 mJ
    -
    -
    -
    -
    YES
    yes
    SINGLE
    unknown
    3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    100V
    13A
    0.12Ohm
    100V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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