Infineon Technologies IRLR3802TRPBF
- Part Number:
- IRLR3802TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 4539002-IRLR3802TRPBF
- Description:
- MOSFET N-CH 12V 84A DPAK
- Datasheet:
- IRLR3802TRPBF
Infineon Technologies IRLR3802TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR3802TRPBF.
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2004
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max88W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation88W
- Case ConnectionDRAIN
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8.5m Ω @ 15A, 4.5V
- Vgs(th) (Max) @ Id1.9V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2490pF @ 6V
- Current - Continuous Drain (Id) @ 25°C84A Tc
- Gate Charge (Qg) (Max) @ Vgs41nC @ 5V
- Rise Time14ns
- Drive Voltage (Max Rds On,Min Rds On)2.8V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)17 ns
- Turn-Off Delay Time21 ns
- Continuous Drain Current (ID)84A
- JEDEC-95 CodeTO-252AA
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage12V
- Height2.3876mm
- Length6.7056mm
- Width6.22mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
IRLR3802TRPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2490pF @ 6V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 12V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 12V.As a result of its turn-off delay time, which is 21 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 11 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.In addition to reducing power consumption, this device uses drive voltage (2.8V 4.5V).
IRLR3802TRPBF Features
a continuous drain current (ID) of 84A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 21 ns
IRLR3802TRPBF Applications
There are a lot of Infineon Technologies
IRLR3802TRPBF applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2490pF @ 6V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 12V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 12V.As a result of its turn-off delay time, which is 21 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 11 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.In addition to reducing power consumption, this device uses drive voltage (2.8V 4.5V).
IRLR3802TRPBF Features
a continuous drain current (ID) of 84A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 21 ns
IRLR3802TRPBF Applications
There are a lot of Infineon Technologies
IRLR3802TRPBF applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRLR3802TRPBF More Descriptions
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
MOSFET, 12V, 84A, 8.5 MOHM, 27 NC QG, LOGIC LEVEL, D-PAK
12V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
MOSFET, 12V, 84A, 8.5 MOHM, 27 NC QG, LOGIC LEVEL, D-PAK
12V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
The three parts on the right have similar specifications to IRLR3802TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthRadiation HardeningRoHS StatusResistanceAdditional FeatureVoltage - Rated DCCurrent RatingThreshold VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageAvalanche Energy Rating (Eas)Recovery TimeNominal VgsREACH SVHCLead FreeSurface MountPbfree CodeTerminal PositionReach Compliance CodePin CountQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinView Compare
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IRLR3802TRPBF10 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2004e3Not For New Designs1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose PowerMOSFET (Metal Oxide)GULL WING26030R-PSSO-G2188W TcSingleENHANCEMENT MODE88WDRAIN11 nsN-ChannelSWITCHING8.5m Ω @ 15A, 4.5V1.9V @ 250μA2490pF @ 6V84A Tc41nC @ 5V14ns2.8V 4.5V±12V17 ns21 ns84ATO-252AA12V12V2.3876mm6.7056mm6.22mmNoROHS3 Compliant------------------------
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-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTubeHEXFET®2003e3Discontinued1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose PowerMOSFET (Metal Oxide)GULL WING26030R-PSSO-G2145W TcSingleENHANCEMENT MODE38WDRAIN8.5 nsN-ChannelSWITCHING45m Ω @ 14A, 10V1V @ 250μA450pF @ 25V23A Tc15nC @ 4.5V140ns4V 10V±16V20 ns12 ns23ATO-252AA16V30V2.39mm6.73mm6.22mmNoROHS3 Compliant45mOhmAVALANCHE RATED30V23A1V96A30V77 mJ97 ns1 VNo SVHCLead Free-----------
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-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTubeHEXFET®2008e3Discontinued1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose PowerMOSFET (Metal Oxide)GULL WING26030R-PSSO-G2157W TcSingleENHANCEMENT MODE57WDRAIN8 nsN-ChannelSWITCHING37m Ω @ 15A, 10V3V @ 250μA710pF @ 25V25A Tc20nC @ 5V57ns5V 10V±16V37 ns25 ns25ATO-252AA16V55V2.39mm6.73mm6.223mmNoROHS3 Compliant37mOhmAVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE55V25A3V-55V--3 VNo SVHCLead Free-----------
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--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-55°C~150°C TJTape & Reel (TR)--e3Obsolete1 (Unlimited)2-MATTE TIN-MOSFET (Metal Oxide)GULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PSSO-G212.5W Ta 46W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING120m Ω @ 6.5A, 5V2V @ 250μA755pF @ 25V13A Tc24nC @ 5V-5V±20V----------ROHS3 Compliant-----45A-225 mJ----YESyesSINGLEunknown3COMMERCIALSINGLE WITH BUILT-IN DIODE100V13A0.12Ohm100V
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