Infineon Technologies IRG4PC30FDPBF
- Part Number:
- IRG4PC30FDPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3587468-IRG4PC30FDPBF
- Description:
- IGBT 600V 31A 100W TO247AC
- ECAD Model:
-
- Datasheet:
- IRG4PC30FDPBF
Infineon Technologies IRG4PC30FDPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4PC30FDPBF.
- Factory Lead Time14 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight38.000013g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2000
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureFAST SWITCHING, ULTRA FAST SOFT RECOVERY
- SubcategoryInsulated Gate BIP Transistors
- Voltage - Rated DC600V
- Max Power Dissipation100W
- Current Rating31A
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation100W
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Turn On Delay Time42 ns
- Transistor ApplicationPOWER CONTROL
- Rise Time26ns
- Polarity/Channel TypeN-CHANNEL
- Turn-Off Delay Time230 ns
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current31A
- Reverse Recovery Time42 ns
- JEDEC-95 CodeTO-247AC
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.99V
- Turn On Time69 ns
- Test Condition480V, 17A, 23 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 17A
- Max Junction Temperature (Tj)150°C
- Continuous Collector Current31A
- Turn Off Time-Nom (toff)620 ns
- Gate Charge51nC
- Current - Collector Pulsed (Icm)120A
- Td (on/off) @ 25°C42ns/230ns
- Switching Energy630μJ (on), 1.39mJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6V
- Height24.99mm
- Length15.875mm
- Width5.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead, Lead Free
irg4pc30fdpbf Description
The IRG4PC30FDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for medium operating frequencies 1 to 5kHz in hard switching, >20kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED? ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations. The HEXFRED? diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.
irg4pc30fdpbf Features
? Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
? IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
? Industry standard TO-247AC package
? Lead-Free
irg4pc30fdpbf Applications
variable-frequency drives (VFDs) /electric cars /trains /variable-speed refrigerators /lamp ballasts /arc-welding machines /air conditioners.
The IRG4PC30FDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for medium operating frequencies 1 to 5kHz in hard switching, >20kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED? ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations. The HEXFRED? diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.
irg4pc30fdpbf Features
? Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
? IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
? Industry standard TO-247AC package
? Lead-Free
irg4pc30fdpbf Applications
variable-frequency drives (VFDs) /electric cars /trains /variable-speed refrigerators /lamp ballasts /arc-welding machines /air conditioners.
IRG4PC30FDPBF More Descriptions
IRG4PC30 Series 600 V 17 A N-Channel Fast CoPack IGBT - TO-247AC
600V Fast 1-8 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHSInfineon SCT
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.59 V Current release time: 83 ns Power dissipation: 100 W
IGBT, SINGLE, N-CH, 600V, 31A, TO-247AC; DC Collector Current: 31A; Collector Emitter Saturation Voltage Vce(on): 1.99V; Power Dissipation Pd: 100W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; N
600V Fast 1-8 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHSInfineon SCT
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.59 V Current release time: 83 ns Power dissipation: 100 W
IGBT, SINGLE, N-CH, 600V, 31A, TO-247AC; DC Collector Current: 31A; Collector Emitter Saturation Voltage Vce(on): 1.99V; Power Dissipation Pd: 100W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; N
The three parts on the right have similar specifications to IRG4PC30FDPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingNumber of ElementsElement ConfigurationPower DissipationCase ConnectionInput TypeTurn On Delay TimeTransistor ApplicationRise TimePolarity/Channel TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeJEDEC-95 CodeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcMax Junction Temperature (Tj)Continuous Collector CurrentTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountJESD-609 CodeTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)Fall Time-Max (tf)View Compare
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IRG4PC30FDPBF14 WeeksThrough HoleThrough HoleTO-247-3338.000013gSILICON-55°C~150°C TJBulk2000Last Time Buy1 (Unlimited)3EAR99FAST SWITCHING, ULTRA FAST SOFT RECOVERYInsulated Gate BIP Transistors600V100W31A1Single100WCOLLECTORStandard42 nsPOWER CONTROL26nsN-CHANNEL230 ns600V31A42 nsTO-247AC600V1.99V69 ns480V, 17A, 23 Ω, 15V1.8V @ 15V, 17A150°C31A620 ns51nC120A42ns/230ns630μJ (on), 1.39mJ (off)20V6V24.99mm15.875mm5.3mmNo SVHCNoROHS3 CompliantContains Lead, Lead Free---------------- -
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--SILICON-55°C~150°C TJTape & Reel (TR)2000Obsolete1 (Unlimited)2------1--COLLECTORStandard-POWER CONTROL-N-CHANNEL---37ns---63 ns480V, 9A, 50 Ω, 15V2V @ 15V, 9A--610 ns27nC64A43ns/240ns250μJ (on), 640μJ (off)-------Non-RoHS Compliant-YESe3MATTE TIN OVER NICKELSINGLEGULL WING26030R-PSSO-G2Not QualifiedSINGLE WITH BUILT-IN DIODE60W600V16A--
-
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--SILICON-55°C~150°C TJTube2000Obsolete1 (Unlimited)2EAR99-Insulated Gate BIP Transistors---1--COLLECTORStandard-POWER CONTROL-N-CHANNEL-------40 ns480V, 18A, 23 Ω, 15V1.6V @ 15V, 18A--1550 ns50nC68A22ns/540ns260μJ (on), 3.45mJ (off)20V6V-----Non-RoHS Compliant-YESe3Matte Tin (Sn) - with Nickel (Ni) barrierSINGLEGULL WING26030R-PSSO-G2-SINGLE100W600V34A100W590ns
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--Through HoleTO-220-3--SILICON-55°C~150°C TJTube2000Obsolete1 (Unlimited)3-ULTRA FAST SOFT RECOVERY----1--COLLECTORStandard-POWER CONTROL-N-CHANNEL---37nsTO-220AB--63 ns480V, 9A, 50 Ω, 15V2V @ 15V, 9A--610 ns27nC64A43ns/240ns250μJ (on), 640μJ (off)-------Non-RoHS Compliant-NO--SINGLE-NOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not QualifiedSINGLE WITH BUILT-IN DIODE60W600V16A--
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