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IRG4BC30KD-STRR

Infineon Technologies IRG4BC30KD-STRR

Part Number:
IRG4BC30KD-STRR
Manufacturer:
Infineon Technologies
Ventron No:
2496263-IRG4BC30KD-STRR
Description:
IGBT 600V 28A 100W D2PAK
ECAD Model:
Datasheet:
IRG4BC30KD-STRR

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Specifications
Infineon Technologies IRG4BC30KD-STRR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4BC30KD-STRR.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2000
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    LOW CONDUCTION LOSS
  • Subcategory
    Insulated Gate BIP Transistors
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    100W
  • Transistor Application
    MOTOR CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    42ns
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Current - Collector (Ic) (Max)
    28A
  • Power Dissipation-Max (Abs)
    100W
  • Turn On Time
    100 ns
  • Test Condition
    480V, 16A, 23 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 16A
  • Turn Off Time-Nom (toff)
    370 ns
  • Gate Charge
    67nC
  • Current - Collector Pulsed (Icm)
    58A
  • Td (on/off) @ 25°C
    60ns/160ns
  • Switching Energy
    600μJ (on), 580μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6V
  • Fall Time-Max (tf)
    120ns
  • RoHS Status
    Non-RoHS Compliant
Description
IRG4BC30KD-STRR Description
The Infineon Technologies IRG4BC30KD-STRR  is an Insulated Gate Bipolar Transistor with an ultrafast soft recovery diode. It belongs to the latest generation  4 IGBTs offer the highest power density motor controls possible.

IRG4BC30KD-STRR Features
High short circuit rating optimized for motor control, tsc =10μs, @360V VcE (start), Tj= 125°C, VGE = 15V
Combines low conduction losses with the high switching speed
tighter parameter distribution and higher efficiency than previous generations
IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
Lead-Free

IRG4BC30KD-STRR Applications
General Uses

IRG4BC30KD-STRR More Descriptions
600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package
IGBT 600V 28A 100W D2PAK
OEMs, CMs ONLY (NO BROKERS)
Product Comparison
The three parts on the right have similar specifications to IRG4BC30KD-STRR.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Reverse Recovery Time
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Power Dissipation-Max (Abs)
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    RoHS Status
    ECCN Code
    View Compare
  • IRG4BC30KD-STRR
    IRG4BC30KD-STRR
    Infineon Technologies
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2000
    e3
    Obsolete
    1 (Unlimited)
    2
    Matte Tin (Sn) - with Nickel (Ni) barrier
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    Standard
    100W
    MOTOR CONTROL
    N-CHANNEL
    42ns
    600V
    28A
    100W
    100 ns
    480V, 16A, 23 Ω, 15V
    2.7V @ 15V, 16A
    370 ns
    67nC
    58A
    60ns/160ns
    600μJ (on), 580μJ (off)
    20V
    6V
    120ns
    Non-RoHS Compliant
    -
    -
  • IRG4BC15UD-STRL
    IRG4BC15UD-STRL
    Infineon Technologies
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Obsolete
    1 (Unlimited)
    2
    MATTE TIN
    -
    -
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    Standard
    49W
    POWER CONTROL
    N-CHANNEL
    28ns
    600V
    14A
    -
    37 ns
    480V, 7.8A, 75 Ω, 15V
    2.4V @ 15V, 7.8A
    400 ns
    23nC
    42A
    17ns/160ns
    240μJ (on), 260μJ (off)
    -
    -
    -
    Non-RoHS Compliant
    -
    IRG4BC30KD-STRR vs IRG4BC15UD-STRL
  • IRG4BC20FD-STRR
    IRG4BC20FD-STRR
    Infineon Technologies
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2000
    e3
    Obsolete
    1 (Unlimited)
    2
    MATTE TIN OVER NICKEL
    -
    -
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    Standard
    60W
    POWER CONTROL
    N-CHANNEL
    37ns
    600V
    16A
    -
    63 ns
    480V, 9A, 50 Ω, 15V
    2V @ 15V, 9A
    610 ns
    27nC
    64A
    43ns/240ns
    250μJ (on), 640μJ (off)
    -
    -
    -
    Non-RoHS Compliant
    -
    IRG4BC30KD-STRR vs IRG4BC20FD-STRR
  • IRG4BC30S-S
    IRG4BC30S-S
    Infineon Technologies
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    e3
    Obsolete
    1 (Unlimited)
    2
    Matte Tin (Sn) - with Nickel (Ni) barrier
    -
    Insulated Gate BIP Transistors
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    -
    1
    SINGLE
    COLLECTOR
    Standard
    100W
    POWER CONTROL
    N-CHANNEL
    -
    600V
    34A
    100W
    40 ns
    480V, 18A, 23 Ω, 15V
    1.6V @ 15V, 18A
    1550 ns
    50nC
    68A
    22ns/540ns
    260μJ (on), 3.45mJ (off)
    20V
    6V
    590ns
    Non-RoHS Compliant
    EAR99
    IRG4BC30KD-STRR vs IRG4BC30S-S
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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