Infineon Technologies IRFR48ZPBF
- Part Number:
- IRFR48ZPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2487572-IRFR48ZPBF
- Description:
- MOSFET N-CH 55V 42A DPAK
- Datasheet:
- IRFR48ZPBF
Infineon Technologies IRFR48ZPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR48ZPBF.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackageD-PAK (TO-252AA)
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max91W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs11mOhm @ 37A, 10V
- Vgs(th) (Max) @ Id4V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds1.72pF @ 25V
- Current - Continuous Drain (Id) @ 25°C42A Tc
- Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
IRFR48ZPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1.72pF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 55V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFR48ZPBF Features
a 55V drain to source voltage (Vdss)
IRFR48ZPBF Applications
There are a lot of Rochester Electronics, LLC
IRFR48ZPBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1.72pF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 55V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFR48ZPBF Features
a 55V drain to source voltage (Vdss)
IRFR48ZPBF Applications
There are a lot of Rochester Electronics, LLC
IRFR48ZPBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRFR48ZPBF More Descriptions
Single N-Channel 55 V 11 mOhm 40 nC HEXFET® Power Mosfet - TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:55V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:91W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:42A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:91W; Power Dissipation Pd:91W; Power Dissipation Ptot Max:91W; Pulse Current Idm:250A; SMD Marking:IRFR48ZPBF; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:55V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:91W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:42A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:91W; Power Dissipation Pd:91W; Power Dissipation Ptot Max:91W; Pulse Current Idm:250A; SMD Marking:IRFR48ZPBF; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRFR48ZPBF.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusSurface MountTransistor Element MaterialPublishedJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRFR48ZPBFSurface MountTO-252-3, DPak (2 Leads Tab), SC-63D-PAK (TO-252AA)-55°C~175°C TJTubeHEXFET®Obsolete1 (Unlimited)MOSFET (Metal Oxide)91W TcN-Channel11mOhm @ 37A, 10V4V @ 50μA1.72pF @ 25V42A Tc60nC @ 10V55V10V±20VROHS3 Compliant-----------------------------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--Tape & Reel (TR)HEXFET®Discontinued1 (Unlimited)MOSFET (Metal Oxide)48W TcN-Channel210m Ω @ 5.6A, 10V4V @ 250μA330pF @ 25V9.4A Tc25nC @ 10V100V10V±20VROHS3 CompliantYESSILICON2004e32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATEDFET General Purpose PowerSINGLEGULL WING260not_compliant30R-PSSO-G2Not Qualified175°C1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA9.4A0.21Ohm38A100V91 mJ
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--Tape & Reel (TR)HEXFET®Discontinued1 (Unlimited)MOSFET (Metal Oxide)45W TcN-Channel75m Ω @ 10A, 10V4V @ 250μA370pF @ 25V17A Tc20nC @ 10V55V10V±20VROHS3 CompliantYESSILICON2004e32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, ULTRA LOW RESISTANCEFET General Purpose PowerSINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G2Not Qualified175°C1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA17A0.075Ohm68A55V71 mJ
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)HEXFET®Obsolete1 (Unlimited)MOSFET (Metal Oxide)144W TcN-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V250V10V±30V---2004-------------------------
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