IRFR48ZPBF

Infineon Technologies IRFR48ZPBF

Part Number:
IRFR48ZPBF
Manufacturer:
Infineon Technologies
Ventron No:
2487572-IRFR48ZPBF
Description:
MOSFET N-CH 55V 42A DPAK
ECAD Model:
Datasheet:
IRFR48ZPBF

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Specifications
Infineon Technologies IRFR48ZPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR48ZPBF.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Supplier Device Package
    D-PAK (TO-252AA)
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    91W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    11mOhm @ 37A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 50μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1.72pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    42A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    60nC @ 10V
  • Drain to Source Voltage (Vdss)
    55V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • RoHS Status
    ROHS3 Compliant
Description
IRFR48ZPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1.72pF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 55V.Using drive voltage (10V) reduces this device's overall power consumption.

IRFR48ZPBF Features
a 55V drain to source voltage (Vdss)


IRFR48ZPBF Applications
There are a lot of Rochester Electronics, LLC
IRFR48ZPBF applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRFR48ZPBF More Descriptions
Single N-Channel 55 V 11 mOhm 40 nC HEXFET® Power Mosfet - TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:55V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:91W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:42A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:91W; Power Dissipation Pd:91W; Power Dissipation Ptot Max:91W; Pulse Current Idm:250A; SMD Marking:IRFR48ZPBF; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRFR48ZPBF.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    RoHS Status
    Surface Mount
    Transistor Element Material
    Published
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IRFR48ZPBF
    IRFR48ZPBF
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    D-PAK (TO-252AA)
    -55°C~175°C TJ
    Tube
    HEXFET®
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    91W Tc
    N-Channel
    11mOhm @ 37A, 10V
    4V @ 50μA
    1.72pF @ 25V
    42A Tc
    60nC @ 10V
    55V
    10V
    ±20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR120NTRRPBF
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    Tape & Reel (TR)
    HEXFET®
    Discontinued
    1 (Unlimited)
    MOSFET (Metal Oxide)
    48W Tc
    N-Channel
    210m Ω @ 5.6A, 10V
    4V @ 250μA
    330pF @ 25V
    9.4A Tc
    25nC @ 10V
    100V
    10V
    ±20V
    ROHS3 Compliant
    YES
    SILICON
    2004
    e3
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED
    FET General Purpose Power
    SINGLE
    GULL WING
    260
    not_compliant
    30
    R-PSSO-G2
    Not Qualified
    175°C
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    TO-252AA
    9.4A
    0.21Ohm
    38A
    100V
    91 mJ
  • IRFR024NTRRPBF
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    Tape & Reel (TR)
    HEXFET®
    Discontinued
    1 (Unlimited)
    MOSFET (Metal Oxide)
    45W Tc
    N-Channel
    75m Ω @ 10A, 10V
    4V @ 250μA
    370pF @ 25V
    17A Tc
    20nC @ 10V
    55V
    10V
    ±20V
    ROHS3 Compliant
    YES
    SILICON
    2004
    e3
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, ULTRA LOW RESISTANCE
    FET General Purpose Power
    SINGLE
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSSO-G2
    Not Qualified
    175°C
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    TO-252AA
    17A
    0.075Ohm
    68A
    55V
    71 mJ
  • IRFR12N25DTRRP
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    144W Tc
    N-Channel
    260m Ω @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    250V
    10V
    ±30V
    -
    -
    -
    2004
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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