Infineon Technologies IRFR2407PBF
- Part Number:
- IRFR2407PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2489094-IRFR2407PBF
- Description:
- MOSFET N-CH 75V 42A DPAK
- Datasheet:
- IRFR2407PBF
Infineon Technologies IRFR2407PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR2407PBF.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackageD-Pak
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max110W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs26mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2.4pF @ 25V
- Current - Continuous Drain (Id) @ 25°C42A Tc
- Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
- Drain to Source Voltage (Vdss)75V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
IRFR2407PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2.4pF @ 25V is its maximum input capacitance.For this transistor to work, a voltage 75V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFR2407PBF Features
a 75V drain to source voltage (Vdss)
IRFR2407PBF Applications
There are a lot of Rochester Electronics, LLC
IRFR2407PBF applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2.4pF @ 25V is its maximum input capacitance.For this transistor to work, a voltage 75V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFR2407PBF Features
a 75V drain to source voltage (Vdss)
IRFR2407PBF Applications
There are a lot of Rochester Electronics, LLC
IRFR2407PBF applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRFR2407PBF More Descriptions
Transistor: N-MOSFET, unipolar, 75V, 42A, 0.026ohm, 110W, -55 175 deg.C, SMD, TO252(DPAK)
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 0.0218Ohm;ID 42A;D-Pak (TO-252AA);PD 110W
Single N-Channel 75 V 26 mOhm 74 nC HEXFET® Power Mosfet - DPAK
75V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 75V, 42A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:75V; On Resistance Rds(on):26mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:42A; Junction to Case Thermal Resistance A:1.4°C/W; Package / Case:DPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:170A; SMD Marking:IRFR2407; Termination Type:SMD; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 0.0218Ohm;ID 42A;D-Pak (TO-252AA);PD 110W
Single N-Channel 75 V 26 mOhm 74 nC HEXFET® Power Mosfet - DPAK
75V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 75V, 42A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:75V; On Resistance Rds(on):26mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:42A; Junction to Case Thermal Resistance A:1.4°C/W; Package / Case:DPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:170A; SMD Marking:IRFR2407; Termination Type:SMD; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRFR2407PBF.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusPublishedMountContinuous Drain Current (ID)View Compare
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IRFR2407PBFSurface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak-55°C~175°C TJTubeHEXFET®Obsolete1 (Unlimited)MOSFET (Metal Oxide)110W TcN-Channel26mOhm @ 25A, 10V4V @ 250μA2.4pF @ 25V42A Tc110nC @ 10V75V10V±20VROHS3 Compliant----
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)HEXFET®Obsolete1 (Unlimited)MOSFET (Metal Oxide)144W TcN-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V250V10V±30V-2004--
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak-55°C~175°C TJTape & Reel (TR)HEXFET®Obsolete1 (Unlimited)MOSFET (Metal Oxide)144W TcN-Channel260mOhm @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V250V10V±30V-2001--
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~150°C TJTape & Reel (TR)-Active1 (Unlimited)MOSFET (Metal Oxide)25W TcN-Channel200m Ω @ 4.6A, 10V4V @ 250μA250pF @ 25V8.2A Tc10nC @ 10V50V10V±20VNon-RoHS Compliant2016Surface Mount8.2A
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