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Infineon Technologies IRFR2405TRR
- Part Number:
- IRFR2405TRR
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2492004-IRFR2405TRR
- Description:
- MOSFET N-CH 55V 56A DPAK
- ECAD Model:
-
- Datasheet:
- IRFR2405, IRFU2405
Infineon Technologies IRFR2405TRR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR2405TRR.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2000
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max110W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs16m Ω @ 34A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2430pF @ 25V
- Current - Continuous Drain (Id) @ 25°C56A Tc
- Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-252AA
- Drain Current-Max (Abs) (ID)30A
- Drain-source On Resistance-Max0.0016Ohm
- Pulsed Drain Current-Max (IDM)220A
- DS Breakdown Voltage-Min55V
- Avalanche Energy Rating (Eas)130 mJ
- RoHS StatusNon-RoHS Compliant
IRFR2405TRR Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 130 mJ.A device's maximal input capacitance is 2430pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 30A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 220A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 55V.This transistor requires a 55V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFR2405TRR Features
the avalanche energy rating (Eas) is 130 mJ
based on its rated peak drain current 220A.
a 55V drain to source voltage (Vdss)
IRFR2405TRR Applications
There are a lot of Infineon Technologies
IRFR2405TRR applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 130 mJ.A device's maximal input capacitance is 2430pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 30A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 220A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 55V.This transistor requires a 55V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFR2405TRR Features
the avalanche energy rating (Eas) is 130 mJ
based on its rated peak drain current 220A.
a 55V drain to source voltage (Vdss)
IRFR2405TRR Applications
There are a lot of Infineon Technologies
IRFR2405TRR applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRFR2405TRR More Descriptions
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
MOSFET, 55V, 56A, 16 mOhm, 70 nC Qg, D-Pak
Compliant Surface Mount Contains Lead 130 ns 16 mΩ TO-252-3 56 A 2.43 nF
MOSFET, 55V, 56A, 16 mOhm, 70 nC Qg, D-Pak
Compliant Surface Mount Contains Lead 130 ns 16 mΩ TO-252-3 56 A 2.43 nF
The three parts on the right have similar specifications to IRFR2405TRR.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusSupplier Device PackageMountVoltage - Rated DCReach Compliance CodeCurrent RatingRise TimeContinuous Drain Current (ID)Lead FreeView Compare
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IRFR2405TRRSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2000e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE110W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING16m Ω @ 34A, 10V4V @ 250μA2430pF @ 25V56A Tc110nC @ 10V55V10V±20VTO-252AA30A0.0016Ohm220A55V130 mJNon-RoHS Compliant--------- -
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)HEXFET®2004-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)--------144W Tc--N-Channel-260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V250V10V±30V---------------
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Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)HEXFET®2001-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)--------144W Tc--N-Channel-260mOhm @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V250V10V±30V-------D-Pak-------
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Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2000e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrier-FET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE86W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING180m Ω @ 8.3A, 10V5.5V @ 250μA620pF @ 25V14A Tc29nC @ 10V-10V±30VTO-252AA-0.18Ohm56A-130 mJNon-RoHS Compliant-Surface Mount150Vnot_compliant14A26ns14AContains Lead
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