Infineon Technologies IRFR2405TRLPBF

Name: IRFR2405TRLPBF
Brand: Infineon Technologies
SKU: 2487446-IRFR2405TRLPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFR2405TRLPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2487446-IRFR2405TRLPBF

Description:: MOSFET N-CH 55V 56A DPAK

ECAD Model:

Datasheet:: IRFR2405TRLPBF

Specifications

Infineon Technologies IRFR2405TRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR2405TRLPBF.

Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2004
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
110W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
16m Ω @ 34A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2430pF @ 25V
Current - Continuous Drain (Id) @ 25°C
56A Tc
Gate Charge (Qg) (Max) @ Vgs
110nC @ 10V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-252AA
Drain Current-Max (Abs) (ID)
30A
Drain-source On Resistance-Max
0.016Ohm
Pulsed Drain Current-Max (IDM)
220A
DS Breakdown Voltage-Min
55V
Avalanche Energy Rating (Eas)
130 mJ
RoHS Status
ROHS3 Compliant

Description

IRFR2405TRLPBF Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 130 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2430pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 30A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 220A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 55V in order to maintain normal operation.Operating this transistor requires a 55V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IRFR2405TRLPBF Features
the avalanche energy rating (Eas) is 130 mJ
based on its rated peak drain current 220A.
a 55V drain to source voltage (Vdss)

IRFR2405TRLPBF Applications
There are a lot of Infineon Technologies
IRFR2405TRLPBF applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

IRFR2405TRLPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.0118Ohm;ID 56A;D-Pak (TO-252AA);PD 110W
Single N-Channel 55V 16 mOhm 70 nC HEXFET® Power Mosfet - DPAK
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:56A; On Resistance, Rds(on):16mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Product Comparison

The three parts on the right have similar specifications to IRFR2405TRLPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Supplier Device Package

Mount

Continuous Drain Current (ID)

Voltage - Rated DC

Current Rating

Rise Time

Lead Free

View Compare
IRFR2405TRLPBF

Infineon Technologies

12 Weeks

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

e3

Active

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

not_compliant

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

110W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

16m Ω @ 34A, 10V

4V @ 250μA

2430pF @ 25V

56A Tc

110nC @ 10V

55V

10V

±20V

TO-252AA

30A

0.016Ohm

220A

55V

130 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-
IRFR12N25DCTRRP

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2001

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

144W Tc

-

-

N-Channel

-

260mOhm @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

250V

10V

±30V

-

-

-

-

-

-

-

D-Pak

-

-

-

-

-

-

IRFR2405TRLPBF vs IRFR12N25DCTRRP
IRFR010TRR

Vishay Siliconix

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

2016

-

Active

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

25W Tc

-

-

N-Channel

-

200m Ω @ 4.6A, 10V

4V @ 250μA

250pF @ 25V

8.2A Tc

10nC @ 10V

50V

10V

±20V

-

-

-

-

-

-

Non-RoHS Compliant

-

Surface Mount

8.2A

-

-

-

-

IRFR2405TRLPBF vs IRFR010TRR
IRFR13N15DTR

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2000

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

-

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

not_compliant

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

86W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

180m Ω @ 8.3A, 10V

5.5V @ 250μA

620pF @ 25V

14A Tc

29nC @ 10V

-

10V

±30V

TO-252AA

-

0.18Ohm

56A

-

130 mJ

Non-RoHS Compliant

-

Surface Mount

14A

150V

14A

26ns

Contains Lead

IRFR2405TRLPBF vs IRFR13N15DTR

Certification

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Part Number	Manufacturers	Description	Stock	Price
IRFR2405TRLPBF DISTI #IRFR2405TRLPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 56A 3-Pin(2 Tab) DPAK T/R	4450	1 $0.8714 10 $0.7688 25 $0.7594 100 $0.6188 250 $0.5985 500 $0.5508 1000 $0.4519 3000 $0.4057
IRFR2405TRLPBF DISTI #IRFR2405TRLPBF	Infineon Technologies AG	MOSFET N-CH 55V 56A DPAK RoHS: Compliant	0	3000 $0.53761
IRFR2405TRLPBF DISTI #IRFR2405TRLPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 56A 3-Pin(2 Tab) DPAK T/R	4450	18 $0.7688 25 $0.7594 100 $0.6188 250 $0.5985 500 $0.5508 1000 $0.4519 3000 $0.4057
IRFR2405TRLPBF DISTI #IRFR2405TRLPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 56A 3-Pin(2 Tab) DPAK T/R	3000	3000 $0.503
IRFR2405TRLPBF DISTI #IRFR2405TRLPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 56A 3-Pin(2 Tab) DPAK T/R - RoHS: Compliant	0	3000 $0.4019 6000 $0.3869 12000 $0.3729 18000 $0.3609 30000 $0.3539
IRFR2405TRLPBF DISTI #IRFR2405TRLPBF	Infineon Technologies AG	MOSFET, N-CH, 55V, 56A, TO-252, Transistor Polari	2990	1 $1.15 10 $0.978 25 $0.902 50 $0.827 100 $0.751 250 $0.708 500 $0.664 1000 $0.524
IRFR2405TRLPBF DISTI #IRFR2405TRLPBF	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.0118O RoHS: Compliant	0	3000 $1.64 6000 $1.607 15000 $1.558 30000 $1.492 75000 $1.394
IRFR2405TRLPBF DISTI #IRFR2405TRLPBF	Infineon Technologies AG	MOSFET MOSFT 55V 56A 16mOhm 70nC RoHS: Compliant	2795	1 $1.15 10 $0.978 100 $0.751 500 $0.664 1000 $0.524
IRFR2405TRLPBF DISTI #IRFR2405TRLPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 56A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	4450	10 $0.7689 25 $0.7596 100 $0.6188 250 $0.6119
IRFR2405TRLPBF DISTI #IRFR2405TRLPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 56A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	3000	3000 $0.445
IRFR2405TRLPBF DISTI #IRFR2405TRLPBF	Infineon Technologies AG	MOSFET, N-CH, 55V, 56A, TO-252 RoHS: Compliant	2990	5 $1.63 25 $1.42 100 $1.16
IRFR2405TRLPBF DISTI #IRFR2405TRLPBF	Infineon Technologies AG	MOSFET, N-CH, 55V, 56A, TO-252 RoHS: Compliant	2990	5 $1.03 25 $0.925 100 $0.71

Infineon Technologies IRFR2405TRLPBF

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