IRFR024N

IR IRFR024N

Part Number:
IRFR024N
Manufacturer:
IR
Ventron No:
5458057-IRFR024N
Description:
ORIGINAL IN STOCK
ECAD Model:
Datasheet:
IRFR024N

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Specifications
IR IRFR024N technical specifications, attributes, parameters and parts with similar specifications to IR IRFR024N.
  • Surface Mount
    YES
  • Number of Terminals
    2
  • Transistor Element Material
    SILICON
  • JESD-609 Code
    e0
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    245
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Operating Temperature (Max)
    175°C
  • Operating Temperature (Min)
    -55°C
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-252AA
  • Drain Current-Max (Abs) (ID)
    14A
  • Drain-source On Resistance-Max
    0.075Ohm
  • Pulsed Drain Current-Max (IDM)
    68A
  • DS Breakdown Voltage-Min
    55V
  • Avalanche Energy Rating (Eas)
    71 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    42W
  • Power Dissipation Ambient-Max
    38W
  • RoHS Status
    Non-RoHS Compliant
Description
IRFR024N Overview
This product is manufactured by IR and belongs to the category of obsolete (EOL) components. The images we provide are for reference only, for detailed product information please see specification sheet IRFR024N or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRFR024N. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IRFR024N More Descriptions
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Trans MOSFET N-CH Si 55V 17A 3-Pin(2 Tab) DPAK T/R
MOSFET, 55V, 16A, 75 MOHM, 13.3 NC QG, D-PAKPower MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A⑤)
Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to IRFR024N.
  • Image
    Part Number
    Manufacturer
    Surface Mount
    Number of Terminals
    Transistor Element Material
    JESD-609 Code
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Operating Temperature (Min)
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Polarity/Channel Type
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    FET Technology
    Power Dissipation-Max (Abs)
    Power Dissipation Ambient-Max
    RoHS Status
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Technology
    Reach Compliance Code
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Mount
    Number of Pins
    Supplier Device Package
    Weight
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Current Rating
    Number of Channels
    Element Configuration
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Lead Free
    View Compare
  • IRFR024N
    IRFR024N
    YES
    2
    SILICON
    e0
    1 (Unlimited)
    EAR99
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED
    FET General Purpose Power
    SINGLE
    GULL WING
    245
    30
    3
    R-PSSO-G2
    Not Qualified
    175°C
    -55°C
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    N-CHANNEL
    TO-252AA
    14A
    0.075Ohm
    68A
    55V
    71 mJ
    METAL-OXIDE SEMICONDUCTOR
    42W
    38W
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR12N25DTRLP
    -
    -
    -
    -
    1 (Unlimited)
    EAR99
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    Obsolete
    MOSFET (Metal Oxide)
    compliant
    144W Tc
    N-Channel
    260m Ω @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    250V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR1205TRR
    -
    -
    -
    -
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    Obsolete
    MOSFET (Metal Oxide)
    -
    107W Tc
    N-Channel
    27m Ω @ 26A, 10V
    4V @ 250μA
    1300pF @ 25V
    44A Tc
    65nC @ 10V
    55V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR020
    -
    -
    -
    -
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C~150°C TJ
    Tube
    -
    2016
    Obsolete
    MOSFET (Metal Oxide)
    -
    2.5W Ta 42W Tc
    N-Channel
    100mOhm @ 8.4A, 10V
    4V @ 250μA
    640pF @ 25V
    14A Tc
    25nC @ 10V
    60V
    10V
    ±20V
    Surface Mount
    3
    D-Pak
    1.437803g
    150°C
    -55°C
    50V
    15A
    1
    Single
    13 ns
    58ns
    42 ns
    25 ns
    14A
    20V
    60V
    640pF
    100mOhm
    100 mΩ
    2.39mm
    6.73mm
    6.22mm
    Contains Lead
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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