Vishay Siliconix IRFBC40ASPBF
- Part Number:
- IRFBC40ASPBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2481108-IRFBC40ASPBF
- Description:
- MOSFET N-CH 600V 6.2A D2PAK
- Datasheet:
- IRFBC40ASPBF
Vishay Siliconix IRFBC40ASPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFBC40ASPBF.
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Supplier Device PackageD2PAK
- Weight1.437803g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2008
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance1.2Ohm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max125W Tc
- Element ConfigurationSingle
- Power Dissipation125W
- Turn On Delay Time13 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.2Ohm @ 3.7A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1036pF @ 25V
- Current - Continuous Drain (Id) @ 25°C6.2A Tc
- Gate Charge (Qg) (Max) @ Vgs42nC @ 10V
- Rise Time23ns
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)18 ns
- Turn-Off Delay Time31 ns
- Continuous Drain Current (ID)6.2A
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage600V
- Input Capacitance1.036nF
- Drain to Source Resistance1.2Ohm
- Rds On Max1.2 Ω
- Nominal Vgs4 V
- Height4.83mm
- Length10.67mm
- Width9.65mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFBC40ASPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1036pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 6.2A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [31 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 1.2Ohm.A turn-on delay time of 13 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFBC40ASPBF Features
a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 31 ns
single MOSFETs transistor is 1.2Ohm
a 600V drain to source voltage (Vdss)
IRFBC40ASPBF Applications
There are a lot of Vishay Siliconix
IRFBC40ASPBF applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1036pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 6.2A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [31 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 1.2Ohm.A turn-on delay time of 13 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFBC40ASPBF Features
a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 31 ns
single MOSFETs transistor is 1.2Ohm
a 600V drain to source voltage (Vdss)
IRFBC40ASPBF Applications
There are a lot of Vishay Siliconix
IRFBC40ASPBF applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRFBC40ASPBF More Descriptions
Single N-Channel 600 V 1.2 Ohms Surface Mount Power Mosfet - D2PAK-3
Trans MOSFET N-CH 600V 6.2A 3-Pin(2 Tab) D2PAK
Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6.2A; On Resistance Rds(On):1.2Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: No
Trans MOSFET N-CH 600V 6.2A 3-Pin(2 Tab) D2PAK
Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6.2A; On Resistance Rds(On):1.2Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: No
The three parts on the right have similar specifications to IRFBC40ASPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesNumber of TerminationsECCN CodeTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinVoltage - Rated DCCurrent RatingContact PlatingTerminationSubcategoryThreshold VoltageJEDEC-95 CodeDual Supply VoltageAvalanche Energy Rating (Eas)REACH SVHCView Compare
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IRFBC40ASPBF8 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK1.437803g-55°C~150°C TJTube2008Active1 (Unlimited)1.2Ohm150°C-55°CMOSFET (Metal Oxide)11125W TcSingle125W13 nsN-Channel1.2Ohm @ 3.7A, 10V4V @ 250μA1036pF @ 25V6.2A Tc42nC @ 10V23ns600V10V±30V18 ns31 ns6.2A30V600V1.036nF1.2Ohm1.2 Ω4 V4.83mm10.67mm9.65mmNoROHS3 CompliantLead Free-----------------------------
-
--Through HoleTO-273AA----40°C~175°C TJTube2010Obsolete1 (Unlimited)---MOSFET (Metal Oxide)1-300W Tc---N-Channel3.7m Ω @ 95A, 10V4V @ 250μA7360pF @ 25V206A Tc200nC @ 10V-40V10V±20V-------------Non-RoHS Compliant-NOSILICONHEXFET®3EAR99SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSIP-T3Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING95A0.0037Ohm650A40V----------
-
-Through HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube2004Obsolete1 (Unlimited)-150°C-55°CMOSFET (Metal Oxide)-1280W TcSingle280W20 nsN-Channel350mOhm @ 10A, 10V5V @ 250μA2210pF @ 25V17A Tc89nC @ 10V77ns500V10V±30V30 ns38 ns17A30V500V2.21nF350mOhm350 mΩ-9.01mm10.41mm4.7mm-ROHS3 CompliantLead Free------------------500V17A--------
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14 WeeksThrough HoleThrough HoleTO-220-33---55°C~175°C TJTube2000Not For New Designs1 (Unlimited)100MOhm--MOSFET (Metal Oxide)1-3.8W Ta 170W TcSingle170W14 nsN-Channel100m Ω @ 14A, 10V5.5V @ 250μA1960pF @ 25V24A Tc86nC @ 10V32ns-10V±30V16 ns26 ns24A30V200V---5.5 V4.69mm10.54mm4.699mmNoROHS3 CompliantContains Lead, Lead Free-SILICONHEXFET®3EAR99------ENHANCEMENT MODEDRAINSWITCHING--96A-200V24ATinThrough HoleFET General Purpose Power5.5VTO-220AB200V250 mJNo SVHC
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