IRFBC40ASPBF

Vishay Siliconix IRFBC40ASPBF

Part Number:
IRFBC40ASPBF
Manufacturer:
Vishay Siliconix
Ventron No:
2481108-IRFBC40ASPBF
Description:
MOSFET N-CH 600V 6.2A D2PAK
ECAD Model:
Datasheet:
IRFBC40ASPBF

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Specifications
Vishay Siliconix IRFBC40ASPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFBC40ASPBF.
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Supplier Device Package
    D2PAK
  • Weight
    1.437803g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2008
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    1.2Ohm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    125W Tc
  • Element Configuration
    Single
  • Power Dissipation
    125W
  • Turn On Delay Time
    13 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    1.2Ohm @ 3.7A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1036pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    6.2A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    42nC @ 10V
  • Rise Time
    23ns
  • Drain to Source Voltage (Vdss)
    600V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    18 ns
  • Turn-Off Delay Time
    31 ns
  • Continuous Drain Current (ID)
    6.2A
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    600V
  • Input Capacitance
    1.036nF
  • Drain to Source Resistance
    1.2Ohm
  • Rds On Max
    1.2 Ω
  • Nominal Vgs
    4 V
  • Height
    4.83mm
  • Length
    10.67mm
  • Width
    9.65mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFBC40ASPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1036pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 6.2A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [31 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 1.2Ohm.A turn-on delay time of 13 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRFBC40ASPBF Features
a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 31 ns
single MOSFETs transistor is 1.2Ohm
a 600V drain to source voltage (Vdss)


IRFBC40ASPBF Applications
There are a lot of Vishay Siliconix
IRFBC40ASPBF applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRFBC40ASPBF More Descriptions
Single N-Channel 600 V 1.2 Ohms Surface Mount Power Mosfet - D2PAK-3
Trans MOSFET N-CH 600V 6.2A 3-Pin(2 Tab) D2PAK
Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6.2A; On Resistance Rds(On):1.2Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: No
Product Comparison
The three parts on the right have similar specifications to IRFBC40ASPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    Series
    Number of Terminations
    ECCN Code
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Voltage - Rated DC
    Current Rating
    Contact Plating
    Termination
    Subcategory
    Threshold Voltage
    JEDEC-95 Code
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    REACH SVHC
    View Compare
  • IRFBC40ASPBF
    IRFBC40ASPBF
    8 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    1.437803g
    -55°C~150°C TJ
    Tube
    2008
    Active
    1 (Unlimited)
    1.2Ohm
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    125W Tc
    Single
    125W
    13 ns
    N-Channel
    1.2Ohm @ 3.7A, 10V
    4V @ 250μA
    1036pF @ 25V
    6.2A Tc
    42nC @ 10V
    23ns
    600V
    10V
    ±30V
    18 ns
    31 ns
    6.2A
    30V
    600V
    1.036nF
    1.2Ohm
    1.2 Ω
    4 V
    4.83mm
    10.67mm
    9.65mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFBA1404P
    -
    -
    Through Hole
    TO-273AA
    -
    -
    -
    -40°C~175°C TJ
    Tube
    2010
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    1
    -
    300W Tc
    -
    -
    -
    N-Channel
    3.7m Ω @ 95A, 10V
    4V @ 250μA
    7360pF @ 25V
    206A Tc
    200nC @ 10V
    -
    40V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    NO
    SILICON
    HEXFET®
    3
    EAR99
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSIP-T3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    95A
    0.0037Ohm
    650A
    40V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFB16N50KPBF
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~150°C TJ
    Tube
    2004
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    MOSFET (Metal Oxide)
    -
    1
    280W Tc
    Single
    280W
    20 ns
    N-Channel
    350mOhm @ 10A, 10V
    5V @ 250μA
    2210pF @ 25V
    17A Tc
    89nC @ 10V
    77ns
    500V
    10V
    ±30V
    30 ns
    38 ns
    17A
    30V
    500V
    2.21nF
    350mOhm
    350 mΩ
    -
    9.01mm
    10.41mm
    4.7mm
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    500V
    17A
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFB23N20DPBF
    14 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -
    -55°C~175°C TJ
    Tube
    2000
    Not For New Designs
    1 (Unlimited)
    100MOhm
    -
    -
    MOSFET (Metal Oxide)
    1
    -
    3.8W Ta 170W Tc
    Single
    170W
    14 ns
    N-Channel
    100m Ω @ 14A, 10V
    5.5V @ 250μA
    1960pF @ 25V
    24A Tc
    86nC @ 10V
    32ns
    -
    10V
    ±30V
    16 ns
    26 ns
    24A
    30V
    200V
    -
    -
    -
    5.5 V
    4.69mm
    10.54mm
    4.699mm
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    SILICON
    HEXFET®
    3
    EAR99
    -
    -
    -
    -
    -
    -
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    -
    -
    96A
    -
    200V
    24A
    Tin
    Through Hole
    FET General Purpose Power
    5.5V
    TO-220AB
    200V
    250 mJ
    No SVHC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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